The Experts below are selected from a list of 324 Experts worldwide ranked by ideXlab platform
Manijeh Razeghi - One of the best experts on this subject based on the ideXlab platform.
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Photovoltaic MWIR Type-II Superlattice Focal Plane Array on Gaas Substrate
IEEE Journal of Quantum Electronics, 2010Co-Authors: Edward Kwei Wei Huang, Binhminh Nguyen, Pierre Yves Delaunay, Siamak Abdollahi Pour, Manijeh RazeghiAbstract:Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb Substrates, Gaas is an attractive alternative with 8 in wafers commercially available, but is 7.8% lattice mismatched to T2SL. In this paper, we present a photovoltaic T2SL 320 × 256 FPA in the mid-wavelength infrared on Gaas Substrate. The FPA attained a median noise equivalent temperature difference of 13 and 10 mK (F# = 2.3) with integration times of 10.02 and 19.06 ms, respectively, at 67 K.
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demonstration of high performance long wavelength infrared type ii inas gasb superlattice photodiode grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Abdollahi S Pour, Binhminh Nguyen, Edward Kwei Wei Huang, Simeon Bogdanov, Manijeh RazeghiAbstract:We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 μm, on Gaas Substrate. Despite a 7.3% lattice mismatch to the Substrate, photodiodes passivated with polyimide exhibit an R0A value of 35 Ω cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb Substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb Substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1×1011 Jones. Although some difference in performances is observed, devices grown on Gaas Substrate already attained the background limit performance at 77 K with a 300 K background and a 2π field of view.
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demonstration of midinfrared type ii inas gasb superlattice photodiodes grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Binhminh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Simeon Bogdanov, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z TidrowAbstract:We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a Gaas Substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the Gaas Substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+-i-n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0A) in excess of 1600 Ω cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6×1011 cmHz/W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb Substrates with a carrier lifetime of 110 ns and a detectivity of 6×108 cmHz/W.
Binhminh Nguyen - One of the best experts on this subject based on the ideXlab platform.
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Photovoltaic MWIR Type-II Superlattice Focal Plane Array on Gaas Substrate
IEEE Journal of Quantum Electronics, 2010Co-Authors: Edward Kwei Wei Huang, Binhminh Nguyen, Pierre Yves Delaunay, Siamak Abdollahi Pour, Manijeh RazeghiAbstract:Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb Substrates, Gaas is an attractive alternative with 8 in wafers commercially available, but is 7.8% lattice mismatched to T2SL. In this paper, we present a photovoltaic T2SL 320 × 256 FPA in the mid-wavelength infrared on Gaas Substrate. The FPA attained a median noise equivalent temperature difference of 13 and 10 mK (F# = 2.3) with integration times of 10.02 and 19.06 ms, respectively, at 67 K.
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demonstration of high performance long wavelength infrared type ii inas gasb superlattice photodiode grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Abdollahi S Pour, Binhminh Nguyen, Edward Kwei Wei Huang, Simeon Bogdanov, Manijeh RazeghiAbstract:We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 μm, on Gaas Substrate. Despite a 7.3% lattice mismatch to the Substrate, photodiodes passivated with polyimide exhibit an R0A value of 35 Ω cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb Substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb Substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1×1011 Jones. Although some difference in performances is observed, devices grown on Gaas Substrate already attained the background limit performance at 77 K with a 300 K background and a 2π field of view.
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demonstration of midinfrared type ii inas gasb superlattice photodiodes grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Binhminh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Simeon Bogdanov, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z TidrowAbstract:We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a Gaas Substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the Gaas Substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+-i-n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0A) in excess of 1600 Ω cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6×1011 cmHz/W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb Substrates with a carrier lifetime of 110 ns and a detectivity of 6×108 cmHz/W.
Edward Kwei Wei Huang - One of the best experts on this subject based on the ideXlab platform.
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Photovoltaic MWIR Type-II Superlattice Focal Plane Array on Gaas Substrate
IEEE Journal of Quantum Electronics, 2010Co-Authors: Edward Kwei Wei Huang, Binhminh Nguyen, Pierre Yves Delaunay, Siamak Abdollahi Pour, Manijeh RazeghiAbstract:Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb Substrates, Gaas is an attractive alternative with 8 in wafers commercially available, but is 7.8% lattice mismatched to T2SL. In this paper, we present a photovoltaic T2SL 320 × 256 FPA in the mid-wavelength infrared on Gaas Substrate. The FPA attained a median noise equivalent temperature difference of 13 and 10 mK (F# = 2.3) with integration times of 10.02 and 19.06 ms, respectively, at 67 K.
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demonstration of high performance long wavelength infrared type ii inas gasb superlattice photodiode grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Abdollahi S Pour, Binhminh Nguyen, Edward Kwei Wei Huang, Simeon Bogdanov, Manijeh RazeghiAbstract:We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 μm, on Gaas Substrate. Despite a 7.3% lattice mismatch to the Substrate, photodiodes passivated with polyimide exhibit an R0A value of 35 Ω cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb Substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb Substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1×1011 Jones. Although some difference in performances is observed, devices grown on Gaas Substrate already attained the background limit performance at 77 K with a 300 K background and a 2π field of view.
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demonstration of midinfrared type ii inas gasb superlattice photodiodes grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Binhminh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Simeon Bogdanov, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z TidrowAbstract:We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a Gaas Substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the Gaas Substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+-i-n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0A) in excess of 1600 Ω cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6×1011 cmHz/W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb Substrates with a carrier lifetime of 110 ns and a detectivity of 6×108 cmHz/W.
T. Kurokawa - One of the best experts on this subject based on the ideXlab platform.
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0.85-μm vertical-cavity surface-emitting laser diode arrays grown on p-type Gaas Substrate
IEEE Photonics Technology Letters, 1997Co-Authors: Y. Kohama, Y. Ohiso, K. Tateno, T. KurokawaAbstract:We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-μm 8×8 bottom-emitting vertical-cavity surface-emitting AlGaas-Gaas DBR QW laser diode (VCSEL) arrays on a p-type Gaas Substrate, which are applicable to optical interconnection. The laser characteristics are slightly inferior to those of VCSEL arrays made on n-type Gaas Substrate with the same reflectivity, but exhibit for better array uniformity of threshold current density than previously reported. Such devices are applicable to N-MOS integration.
Meimei Z Tidrow - One of the best experts on this subject based on the ideXlab platform.
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demonstration of midinfrared type ii inas gasb superlattice photodiodes grown on Gaas Substrate
Applied Physics Letters, 2009Co-Authors: Binhminh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Simeon Bogdanov, Pierre Yves Delaunay, Manijeh Razeghi, Meimei Z TidrowAbstract:We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a Gaas Substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the Gaas Substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+-i-n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0A) in excess of 1600 Ω cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6×1011 cmHz/W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb Substrates with a carrier lifetime of 110 ns and a detectivity of 6×108 cmHz/W.