Gamma-Ray Detectors

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Ralph B. James - One of the best experts on this subject based on the ideXlab platform.

  • Vanadium-Doped Cadmium Manganese Telluride (Cd1−xMnxTe) Crystals as X- and Gamma-Ray Detectors
    Journal of Electronic Materials, 2009
    Co-Authors: Anwar Hossain, G Yang, D Kochanowska, A Mycielski, Yonggang Cui, Aleksey E. Bolotnikov, Giuseppe S. Camarda, M. Witkowska-baran, Ralph B. James
    Abstract:

    CdMnTe offers several potential advantages over CdZnTe as a room- temperature Gamma-Ray detector, but many drawbacks in its growth process impede the production of large, defect-free single crystals with high electrical resistivity and high electron lifetimes. Here, we report our findings of the defects in several vanadium-doped as-grown as well as annealed Cd1−xMnxTe crystals, using etch pit techniques. We carefully selected single crystals from the raw wafer to fabricate and test as a Gamma-Ray detector. We describe the quality of the processed Cd1−xMnxTe surfaces, and compare them with similarly treated CdZnTe crystals. We discuss the characterization experiments aimed at clarifying the electrical properties of fabricated Detectors, and evaluate their performance as Gamma-Ray spectrometers.

  • Defect structure of Sn-doped CdTe
    Journal of Electronic Materials, 2003
    Co-Authors: J. Franc, Michael Fiederle, V. Babentsov, Alex Fauler, Klaus-werner Benz, Ralph B. James
    Abstract:

    A complex investigation of defect structure of high-resistivity, Sn-doped CdTe grown by vertical-gradient freeze and Bridgman methods by a number of optical, photoelectrical, and electrical methods was performed. High-resistive and photosensitive material, potentially interesting for fabrication of x- and Gamma-Ray Detectors, was produced in 80% of the crystal volume. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of Sn and Fe-related as well as native defects (Cd vacancy) is discussed.

  • The spatial response of CdZnTe Gamma-Ray Detectors as measured by Gamma-Ray mapping
    Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2001
    Co-Authors: Bruce Andrew Brunett, Tuviah E. Schlesinger, J.m. Van Scyoc, Ralph B. James
    Abstract:

    Abstract We have developed a system to measure the spatial response of cadmium zinc telluride (CZT) radiation Detectors. Using this system we have measured the response of several novel detector designs including several variations of the unipolar design. We have observed a wide range of energy resolution and efficiency among the different device designs. Each design has unique strengths and weaknesses which affect the device performance. In addition to design effects on performance, several instances of poor material uniformity degrading the device performance have been observed. In this paper we will discuss the spatial detector response focusing on the effects of the detector design. Where appropriate, we will also discuss the observed effects of material uniformity on device performance.

  • Performances of CdTe and Cd1-xZnxTe Gamma-Ray Detectors at elevated temperatures
    Gamma-Ray Detector Physics and Applications, 1994
    Co-Authors: Stephen U. Egarievwe, Leroy Salary, K.-t. Chen, Arnold Burger, Ralph B. James
    Abstract:

    This comparative study of the performances of CdTe and Cd1--x)ZnxTe Detectors at temperatures in the 25 - 70 degree(s)C range shows that Cd0.8Zn0.2Te has a better performance as a Gamma-Ray detector at elevated temperatures. Peak position shifts as function of temperature are less pronounced in spectra obtained with Cd0.8Zn0.2Te Detectors than in spectra from CdTe. The Cd0.8Zn0.2Te Detectors exhibited a FWHM of 24% (at 60 degree(s)C) at 81 keV without significant deterioration due to the heating cycles.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Olga Nazarenko - One of the best experts on this subject based on the ideXlab platform.

Hui Hua - One of the best experts on this subject based on the ideXlab platform.

  • Cd1-xZnxTe: Growth and characterization of crystals for X-ray and Gamma-Ray Detectors
    Progress in Crystal Growth and Characterization of Materials, 2003
    Co-Authors: Wanqi Jie, Hui Hua
    Abstract:

    Abstract The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1−xZnxTe crystals for x-ray and Gamma-Ray Detectors. The present paper reviews the evolution and development of Cd1−xZnxTe crystal growth for x-ray and Gamma-Ray Detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1−xZnxTe. Three sets of Cd1−xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.

Sergii Yakunin - One of the best experts on this subject based on the ideXlab platform.

Wanqi Jie - One of the best experts on this subject based on the ideXlab platform.

  • Cd1-xZnxTe: Growth and characterization of crystals for X-ray and Gamma-Ray Detectors
    Progress in Crystal Growth and Characterization of Materials, 2003
    Co-Authors: Wanqi Jie, Hui Hua
    Abstract:

    Abstract The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1−xZnxTe crystals for x-ray and Gamma-Ray Detectors. The present paper reviews the evolution and development of Cd1−xZnxTe crystal growth for x-ray and Gamma-Ray Detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1−xZnxTe. Three sets of Cd1−xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.