The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform

H. Ohashi - One of the best experts on this subject based on the ideXlab platform.

  • High turn-off current capability of parallel-connected 4.5 kV trench IEGT
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: T. Ogura, T. Inoue, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ninomiya, H. Ohashi
    Abstract:

    An injection enhancement IGBT (IEGT) is a high-power switching device that realizes low saturation voltage by the injection enhancement effect (IE-effect). The experimental results obtained by the IE-effect are presented. The trench IEGTs with 6- and 12-/spl mu/m trench depth were compared with a planar IEGT. These experimental results show that the trench IEGT has a better trade-off relation between saturation voltage and turn-off loss than the planar IEGT. Moreover, the trench IEGT with 12-/spl mu/m trench depth has a better trade-off relation than that with 6-/spl mu/m trench depth. These results prove clearly that the IE-effect improves the trade-off relation. Turn-off characteristics of parallel-connected 4.5 kV trench IEGTs are discussed. The influence of the Gate Circuit parameters on a turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300-A turn-off current capability was obtained using nine parallel-connected IEGT chips in an inductive load Circuit and without any snubber Circuits. In conclusion, the IEGT has a good prospect of replacing the Gate turn-off thyristor (GTO) for high-voltage applications, such as motor controls for traction, industrial motor drives, and so on.

  • High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs
    Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998
    Co-Authors: T. Ogura, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ohashi
    Abstract:

    The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced Gate transistors (IEGTs) are discussed. The influence of the Gate Circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At the optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at T/sub j/=100/spl deg/C is realized using nine parallel-connected IEGT chips in an inductive load Circuit and without a snubber Circuit.

T. Ogura - One of the best experts on this subject based on the ideXlab platform.

  • High turn-off current capability of parallel-connected 4.5 kV trench IEGT
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: T. Ogura, T. Inoue, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ninomiya, H. Ohashi
    Abstract:

    An injection enhancement IGBT (IEGT) is a high-power switching device that realizes low saturation voltage by the injection enhancement effect (IE-effect). The experimental results obtained by the IE-effect are presented. The trench IEGTs with 6- and 12-/spl mu/m trench depth were compared with a planar IEGT. These experimental results show that the trench IEGT has a better trade-off relation between saturation voltage and turn-off loss than the planar IEGT. Moreover, the trench IEGT with 12-/spl mu/m trench depth has a better trade-off relation than that with 6-/spl mu/m trench depth. These results prove clearly that the IE-effect improves the trade-off relation. Turn-off characteristics of parallel-connected 4.5 kV trench IEGTs are discussed. The influence of the Gate Circuit parameters on a turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300-A turn-off current capability was obtained using nine parallel-connected IEGT chips in an inductive load Circuit and without any snubber Circuits. In conclusion, the IEGT has a good prospect of replacing the Gate turn-off thyristor (GTO) for high-voltage applications, such as motor controls for traction, industrial motor drives, and so on.

  • High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs
    Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998
    Co-Authors: T. Ogura, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ohashi
    Abstract:

    The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced Gate transistors (IEGTs) are discussed. The influence of the Gate Circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At the optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at T/sub j/=100/spl deg/C is realized using nine parallel-connected IEGT chips in an inductive load Circuit and without a snubber Circuit.

K. Sugiyama - One of the best experts on this subject based on the ideXlab platform.

  • High turn-off current capability of parallel-connected 4.5 kV trench IEGT
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: T. Ogura, T. Inoue, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ninomiya, H. Ohashi
    Abstract:

    An injection enhancement IGBT (IEGT) is a high-power switching device that realizes low saturation voltage by the injection enhancement effect (IE-effect). The experimental results obtained by the IE-effect are presented. The trench IEGTs with 6- and 12-/spl mu/m trench depth were compared with a planar IEGT. These experimental results show that the trench IEGT has a better trade-off relation between saturation voltage and turn-off loss than the planar IEGT. Moreover, the trench IEGT with 12-/spl mu/m trench depth has a better trade-off relation than that with 6-/spl mu/m trench depth. These results prove clearly that the IE-effect improves the trade-off relation. Turn-off characteristics of parallel-connected 4.5 kV trench IEGTs are discussed. The influence of the Gate Circuit parameters on a turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300-A turn-off current capability was obtained using nine parallel-connected IEGT chips in an inductive load Circuit and without any snubber Circuits. In conclusion, the IEGT has a good prospect of replacing the Gate turn-off thyristor (GTO) for high-voltage applications, such as motor controls for traction, industrial motor drives, and so on.

  • High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs
    Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998
    Co-Authors: T. Ogura, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ohashi
    Abstract:

    The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced Gate transistors (IEGTs) are discussed. The influence of the Gate Circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At the optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at T/sub j/=100/spl deg/C is realized using nine parallel-connected IEGT chips in an inductive load Circuit and without a snubber Circuit.

H. Matsuda - One of the best experts on this subject based on the ideXlab platform.

  • High turn-off current capability of parallel-connected 4.5 kV trench IEGT
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: T. Ogura, T. Inoue, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ninomiya, H. Ohashi
    Abstract:

    An injection enhancement IGBT (IEGT) is a high-power switching device that realizes low saturation voltage by the injection enhancement effect (IE-effect). The experimental results obtained by the IE-effect are presented. The trench IEGTs with 6- and 12-/spl mu/m trench depth were compared with a planar IEGT. These experimental results show that the trench IEGT has a better trade-off relation between saturation voltage and turn-off loss than the planar IEGT. Moreover, the trench IEGT with 12-/spl mu/m trench depth has a better trade-off relation than that with 6-/spl mu/m trench depth. These results prove clearly that the IE-effect improves the trade-off relation. Turn-off characteristics of parallel-connected 4.5 kV trench IEGTs are discussed. The influence of the Gate Circuit parameters on a turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300-A turn-off current capability was obtained using nine parallel-connected IEGT chips in an inductive load Circuit and without any snubber Circuits. In conclusion, the IEGT has a good prospect of replacing the Gate turn-off thyristor (GTO) for high-voltage applications, such as motor controls for traction, industrial motor drives, and so on.

  • High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs
    Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998
    Co-Authors: T. Ogura, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ohashi
    Abstract:

    The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced Gate transistors (IEGTs) are discussed. The influence of the Gate Circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At the optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at T/sub j/=100/spl deg/C is realized using nine parallel-connected IEGT chips in an inductive load Circuit and without a snubber Circuit.

S. Hasegawa - One of the best experts on this subject based on the ideXlab platform.

  • High turn-off current capability of parallel-connected 4.5 kV trench IEGT
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: T. Ogura, T. Inoue, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ninomiya, H. Ohashi
    Abstract:

    An injection enhancement IGBT (IEGT) is a high-power switching device that realizes low saturation voltage by the injection enhancement effect (IE-effect). The experimental results obtained by the IE-effect are presented. The trench IEGTs with 6- and 12-/spl mu/m trench depth were compared with a planar IEGT. These experimental results show that the trench IEGT has a better trade-off relation between saturation voltage and turn-off loss than the planar IEGT. Moreover, the trench IEGT with 12-/spl mu/m trench depth has a better trade-off relation than that with 6-/spl mu/m trench depth. These results prove clearly that the IE-effect improves the trade-off relation. Turn-off characteristics of parallel-connected 4.5 kV trench IEGTs are discussed. The influence of the Gate Circuit parameters on a turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300-A turn-off current capability was obtained using nine parallel-connected IEGT chips in an inductive load Circuit and without any snubber Circuits. In conclusion, the IEGT has a good prospect of replacing the Gate turn-off thyristor (GTO) for high-voltage applications, such as motor controls for traction, industrial motor drives, and so on.

  • High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs
    Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998
    Co-Authors: T. Ogura, K. Sugiyama, S. Hasegawa, H. Matsuda, H. Ohashi
    Abstract:

    The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced Gate transistors (IEGTs) are discussed. The influence of the Gate Circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the Gate parasitic inductance is important for uniform turn-off operation. At the optimum Gate Circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at T/sub j/=100/spl deg/C is realized using nine parallel-connected IEGT chips in an inductive load Circuit and without a snubber Circuit.