The Experts below are selected from a list of 2619 Experts worldwide ranked by ideXlab platform

Masayoshi Yamamoto - One of the best experts on this subject based on the ideXlab platform.

  • Multi-resonant Gate Drive Circuit of isolating-Gate GaN HEMTs for tens of MHz
    IET Circuits Devices & Systems, 2017
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto
    Abstract:

    Research of power supplies for megahertz (MHz) class applications such as a semiconductor manufacturing apparatus, induction heater and wireless transfer is carried out. A liner amplifier is generally used for MHz class applications. The loss of the power devices on a liner amplifier is theoretically high. To reduce the loss, the class E and Φ 2 inverters are proposed, and some of the resonant Gate Drive Circuits (GDC) are utilised at those of the Gate port. However, the control signal of the GDC becomes complicated due to the additional switches. Moreover, the switches in the GDC perform the hard-switching, and the Drive loss can thus be increased. In this study, a multi-resonant Gate Drive Circuit is proposed, and its design method is introduced. It can generate the trapezoidal wave Gate-to-source voltage with the simple control signal, and zero voltage switching operation is achieved at the switches of the Gate Drive Circuit. First, its operation is experimentally verified. Secondly, the Drive loss is also compared with that of the conventional Circuit. Furthermore, its operation with the class E inverter with a cascode GaN high-electron-mobility transistor (HEMT) is confirmed at the switching frequency 13.56 MHz.

  • A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET
    IEEE Transactions on Industry Applications, 2014
    Co-Authors: Hirokatsu Umegami, Masayoshi Yamamoto, Fumiya Hattori, Yu Nozaki, Osamu Machida
    Abstract:

    A novel Gate Drive Circuit suitable for a next-generation semiconductor [gallium nitride field-effect transistor (GaN FET)] is proposed and discussed in this paper. The GaN FET has an inherent problem in that its loss increases on the reverse conduction time, if it is Driven with a conventional Gate Drive Circuit. This active discharged-type Gate Drive Circuit proposed here can decrease the loss, so that the disadvantage is overcome. The Gate Drive loss is also analyzed, and the results have errors within the range of 5%. The effectiveness of the Gate Drive Circuit is evaluated by applying a low leakage current (LLC) converter. The results show that the proposed Circuit can improve the efficiency at all ranges.

  • Drive loss analysis and comparison of capacitor-less Gate Drive Circuit for GaN FETs with capacitor type Gate Drive Circuits
    2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Takashi Yoshida, Masayoshi Yamamoto
    Abstract:

    Galluim-Nitride(GaN) power devises have a potential to achieve higher efficiency operation than Silicon(Si) ones such as MOS FETs and IGBTs. However, the characteristic of GaN FETs is different from MOS FETs, and thus, there is the possibility that GaN-based power electronics Circuits shows more losses than Si-based ones. To resolve this problem, some of the Gate Drive Circuits for GaN FETs are proposed and one of them is called capacitor-less Gate Drive Circuit. This paper presents Drive losses analysis of the capacitor-less Gate Drive Circuit. Furthermore, the Drive losses of the capacitor-less Gate Drive Circuit are compared with capacitor-type Gate Drive Circuit experimentally.

  • Gate Drive Circuit for normally on type GaN FET
    2013 2nd International Conference on Electric Power Equipment - Switching Technology ICEPE-ST 2013, 2013
    Co-Authors: Takashi Yoshida, Hirokatsu Umegami, Fumiya Hatttori, Masayoshi Yamamoto, Atsushi Yamaguchi
    Abstract:

    In this paper, the novel Gate Drive Circuit with a positive supply is\nproposed. This Gate Drive Circuit realizes the switching Drive with a\npositive supply. Hence, a negative supply isn't required to Drive\ndepression-type CaN FETs. And also, the high speed switching is\nachieved, the rise time is 9.6ns and fall time is 28.0ns respectively.\nFurthermore, the validity of the Gate Drive Circuit is verified from the\nexperimental point of view.

  • Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETs
    IEEE Transactions on Electron Devices, 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto
    Abstract:

    Recently, Gallium Nitride (GaN) power devices have become very attractive because of their high power density. GaN FETs, however, differ from MOSFETs, and it is possible that GaN-based power electronics Circuits show lower efficiency than Si-based Circuits because of their unique characteristics. A capacitor-less Gate Drive Circuit is proposed as a solution. This paper shows the effectiveness of a capacitor-less Gate Circuit in terms of Gate Drive loss, reverse conduction loss, and recovery loss, and compares it with capacitor-type Gate Drive Circuits for GaN FETs. Drive loss analysis of an inverted Gate Drive Circuit showing the lowest losses among capacitor-type Gate Drive Circuits and a capacitor-less Gate Drive Circuit was made to examine the differences between them. The results show that higher efficiency operation is obtained by applying a capacitor-less Gate Drive Circuit to simple test Circuits.

Hirokatsu Umegami - One of the best experts on this subject based on the ideXlab platform.

  • Multi-resonant Gate Drive Circuit of isolating-Gate GaN HEMTs for tens of MHz
    IET Circuits Devices & Systems, 2017
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto
    Abstract:

    Research of power supplies for megahertz (MHz) class applications such as a semiconductor manufacturing apparatus, induction heater and wireless transfer is carried out. A liner amplifier is generally used for MHz class applications. The loss of the power devices on a liner amplifier is theoretically high. To reduce the loss, the class E and Φ 2 inverters are proposed, and some of the resonant Gate Drive Circuits (GDC) are utilised at those of the Gate port. However, the control signal of the GDC becomes complicated due to the additional switches. Moreover, the switches in the GDC perform the hard-switching, and the Drive loss can thus be increased. In this study, a multi-resonant Gate Drive Circuit is proposed, and its design method is introduced. It can generate the trapezoidal wave Gate-to-source voltage with the simple control signal, and zero voltage switching operation is achieved at the switches of the Gate Drive Circuit. First, its operation is experimentally verified. Secondly, the Drive loss is also compared with that of the conventional Circuit. Furthermore, its operation with the class E inverter with a cascode GaN high-electron-mobility transistor (HEMT) is confirmed at the switching frequency 13.56 MHz.

  • A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET
    IEEE Transactions on Industry Applications, 2014
    Co-Authors: Hirokatsu Umegami, Masayoshi Yamamoto, Fumiya Hattori, Yu Nozaki, Osamu Machida
    Abstract:

    A novel Gate Drive Circuit suitable for a next-generation semiconductor [gallium nitride field-effect transistor (GaN FET)] is proposed and discussed in this paper. The GaN FET has an inherent problem in that its loss increases on the reverse conduction time, if it is Driven with a conventional Gate Drive Circuit. This active discharged-type Gate Drive Circuit proposed here can decrease the loss, so that the disadvantage is overcome. The Gate Drive loss is also analyzed, and the results have errors within the range of 5%. The effectiveness of the Gate Drive Circuit is evaluated by applying a low leakage current (LLC) converter. The results show that the proposed Circuit can improve the efficiency at all ranges.

  • Drive loss analysis and comparison of capacitor-less Gate Drive Circuit for GaN FETs with capacitor type Gate Drive Circuits
    2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Takashi Yoshida, Masayoshi Yamamoto
    Abstract:

    Galluim-Nitride(GaN) power devises have a potential to achieve higher efficiency operation than Silicon(Si) ones such as MOS FETs and IGBTs. However, the characteristic of GaN FETs is different from MOS FETs, and thus, there is the possibility that GaN-based power electronics Circuits shows more losses than Si-based ones. To resolve this problem, some of the Gate Drive Circuits for GaN FETs are proposed and one of them is called capacitor-less Gate Drive Circuit. This paper presents Drive losses analysis of the capacitor-less Gate Drive Circuit. Furthermore, the Drive losses of the capacitor-less Gate Drive Circuit are compared with capacitor-type Gate Drive Circuit experimentally.

  • Gate Drive Circuit for normally on type GaN FET
    2013 2nd International Conference on Electric Power Equipment - Switching Technology ICEPE-ST 2013, 2013
    Co-Authors: Takashi Yoshida, Hirokatsu Umegami, Fumiya Hatttori, Masayoshi Yamamoto, Atsushi Yamaguchi
    Abstract:

    In this paper, the novel Gate Drive Circuit with a positive supply is\nproposed. This Gate Drive Circuit realizes the switching Drive with a\npositive supply. Hence, a negative supply isn't required to Drive\ndepression-type CaN FETs. And also, the high speed switching is\nachieved, the rise time is 9.6ns and fall time is 28.0ns respectively.\nFurthermore, the validity of the Gate Drive Circuit is verified from the\nexperimental point of view.

  • Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETs
    IEEE Transactions on Electron Devices, 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto
    Abstract:

    Recently, Gallium Nitride (GaN) power devices have become very attractive because of their high power density. GaN FETs, however, differ from MOSFETs, and it is possible that GaN-based power electronics Circuits show lower efficiency than Si-based Circuits because of their unique characteristics. A capacitor-less Gate Drive Circuit is proposed as a solution. This paper shows the effectiveness of a capacitor-less Gate Circuit in terms of Gate Drive loss, reverse conduction loss, and recovery loss, and compares it with capacitor-type Gate Drive Circuits for GaN FETs. Drive loss analysis of an inverted Gate Drive Circuit showing the lowest losses among capacitor-type Gate Drive Circuits and a capacitor-less Gate Drive Circuit was made to examine the differences between them. The results show that higher efficiency operation is obtained by applying a capacitor-less Gate Drive Circuit to simple test Circuits.

Sheng Ye - One of the best experts on this subject based on the ideXlab platform.

  • a new dual channel resonant Gate Drive Circuit for low Gate Drive loss and low switching loss
    IEEE Transactions on Power Electronics, 2008
    Co-Authors: Sheng Ye
    Abstract:

    At high-frequency applications, the Gate Drive loss of the power metal oxide semiconductor field-effect transistor (MOSFET) becomes quite significant. A new dual-channel low side resonant Gate Drive Circuit is proposed in this paper. The proposed Drive Circuit can provide two symmetrical Drive signals for driving two MOSFETs. It charges and discharges the MOSFET Gate capacitor with a constant current source. Both Gate Drive loss and, more importantly, switching loss can be reduced significantly. The proposed resonant Gate Drive Circuit can be used to Drive the synchronous MOSFETs in a current doubler or full-wave rectifier configuration. It can also be used to Drive the primary MOSFETs in push-pull converters. Analysis, computer simulation, and experimental results show that significant power loss reduction is achieved by the proposed Circuit.

  • a new resonant Gate Drive Circuit for synchronous buck converter
    IEEE Transactions on Power Electronics, 2007
    Co-Authors: Sheng Ye
    Abstract:

    This paper proposes a new resonant Gate Drive Circuit for driving both the control metal oxide semiconductor field effect transistor (MOSFET) and synchronous MOSFET in a synchronous buck converter. The Circuit can recover more than 70% of the conventional Gate Drive loss. More importantly, the driving Circuit can also reduce the switching loss. It charges and discharges the Gate of MOSFET at a constant current during switching interval. Other advantages of the proposed Circuit include better noise immunity for dv/dt turn on, less sensitive to parasitic track inductance. The experimental prototype shows that the loss reduction is 10% of the output power for 12 V input, 1.5 V/15 A output with switching frequency of 1 MHz.

  • a new resonant Gate Drive Circuit for synchronous buck converter
    Applied Power Electronics Conference, 2006
    Co-Authors: Sheng Ye
    Abstract:

    The paper proposed a resonant Gate Drive Circuit for buck converter with synchronous rectifier. The Circuit can recover more than 50% of the conventional Gate Drive loss. It charges and discharges the Gate of MOSFET at constant current. It can also reduce the switching loss significantly. Other advantages of the proposed Circuit include better noise immunity for dv/dt turn on, less sensitive to track inductance. The experimental prototype shows that the loss reduction is 10% of the output power at 1MHz.

Fumiya Hattori - One of the best experts on this subject based on the ideXlab platform.

  • Multi-resonant Gate Drive Circuit of isolating-Gate GaN HEMTs for tens of MHz
    IET Circuits Devices & Systems, 2017
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto
    Abstract:

    Research of power supplies for megahertz (MHz) class applications such as a semiconductor manufacturing apparatus, induction heater and wireless transfer is carried out. A liner amplifier is generally used for MHz class applications. The loss of the power devices on a liner amplifier is theoretically high. To reduce the loss, the class E and Φ 2 inverters are proposed, and some of the resonant Gate Drive Circuits (GDC) are utilised at those of the Gate port. However, the control signal of the GDC becomes complicated due to the additional switches. Moreover, the switches in the GDC perform the hard-switching, and the Drive loss can thus be increased. In this study, a multi-resonant Gate Drive Circuit is proposed, and its design method is introduced. It can generate the trapezoidal wave Gate-to-source voltage with the simple control signal, and zero voltage switching operation is achieved at the switches of the Gate Drive Circuit. First, its operation is experimentally verified. Secondly, the Drive loss is also compared with that of the conventional Circuit. Furthermore, its operation with the class E inverter with a cascode GaN high-electron-mobility transistor (HEMT) is confirmed at the switching frequency 13.56 MHz.

  • A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET
    IEEE Transactions on Industry Applications, 2014
    Co-Authors: Hirokatsu Umegami, Masayoshi Yamamoto, Fumiya Hattori, Yu Nozaki, Osamu Machida
    Abstract:

    A novel Gate Drive Circuit suitable for a next-generation semiconductor [gallium nitride field-effect transistor (GaN FET)] is proposed and discussed in this paper. The GaN FET has an inherent problem in that its loss increases on the reverse conduction time, if it is Driven with a conventional Gate Drive Circuit. This active discharged-type Gate Drive Circuit proposed here can decrease the loss, so that the disadvantage is overcome. The Gate Drive loss is also analyzed, and the results have errors within the range of 5%. The effectiveness of the Gate Drive Circuit is evaluated by applying a low leakage current (LLC) converter. The results show that the proposed Circuit can improve the efficiency at all ranges.

  • Drive loss analysis and comparison of capacitor-less Gate Drive Circuit for GaN FETs with capacitor type Gate Drive Circuits
    2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Takashi Yoshida, Masayoshi Yamamoto
    Abstract:

    Galluim-Nitride(GaN) power devises have a potential to achieve higher efficiency operation than Silicon(Si) ones such as MOS FETs and IGBTs. However, the characteristic of GaN FETs is different from MOS FETs, and thus, there is the possibility that GaN-based power electronics Circuits shows more losses than Si-based ones. To resolve this problem, some of the Gate Drive Circuits for GaN FETs are proposed and one of them is called capacitor-less Gate Drive Circuit. This paper presents Drive losses analysis of the capacitor-less Gate Drive Circuit. Furthermore, the Drive losses of the capacitor-less Gate Drive Circuit are compared with capacitor-type Gate Drive Circuit experimentally.

  • Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETs
    IEEE Transactions on Electron Devices, 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto
    Abstract:

    Recently, Gallium Nitride (GaN) power devices have become very attractive because of their high power density. GaN FETs, however, differ from MOSFETs, and it is possible that GaN-based power electronics Circuits show lower efficiency than Si-based Circuits because of their unique characteristics. A capacitor-less Gate Drive Circuit is proposed as a solution. This paper shows the effectiveness of a capacitor-less Gate Circuit in terms of Gate Drive loss, reverse conduction loss, and recovery loss, and compares it with capacitor-type Gate Drive Circuits for GaN FETs. Drive loss analysis of an inverted Gate Drive Circuit showing the lowest losses among capacitor-type Gate Drive Circuits and a capacitor-less Gate Drive Circuit was made to examine the differences between them. The results show that higher efficiency operation is obtained by applying a capacitor-less Gate Drive Circuit to simple test Circuits.

  • Drive loss analysis and comparison of capacitor-less Gate Drive Circuit for GaN FETs with capacitor type Gate Drive Circuits
    2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013
    Co-Authors: Fumiya Hattori, Hirokatsu Umegami, Takashi Yoshida, Masayoshi Yamamoto
    Abstract:

    Galluim-Nitride(GaN) power devises have a potential to achieve higher efficiency operation than Silicon(Si) ones such as MOS FETs and IGBTs. However, the characteristic of GaN FETs is different from MOS FETs, and thus, there is the possibility that GaN-based power electronics Circuits shows more losses than Si-based ones. To resolve this problem, some of the Gate Drive Circuits for GaN FETs are proposed and one of them is called capacitor-less Gate Drive Circuit. This paper presents Drive losses analysis of the capacitor-less Gate Drive Circuit. Furthermore, the Drive losses of the capacitor-less Gate Drive Circuit are compared with capacitor-type Gate Drive Circuit experimentally.

Osamu Machida - One of the best experts on this subject based on the ideXlab platform.

  • A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET
    IEEE Transactions on Industry Applications, 2014
    Co-Authors: Hirokatsu Umegami, Masayoshi Yamamoto, Fumiya Hattori, Yu Nozaki, Osamu Machida
    Abstract:

    A novel Gate Drive Circuit suitable for a next-generation semiconductor [gallium nitride field-effect transistor (GaN FET)] is proposed and discussed in this paper. The GaN FET has an inherent problem in that its loss increases on the reverse conduction time, if it is Driven with a conventional Gate Drive Circuit. This active discharged-type Gate Drive Circuit proposed here can decrease the loss, so that the disadvantage is overcome. The Gate Drive loss is also analyzed, and the results have errors within the range of 5%. The effectiveness of the Gate Drive Circuit is evaluated by applying a low leakage current (LLC) converter. The results show that the proposed Circuit can improve the efficiency at all ranges.

  • A novel high efficiency Gate Drive Circuit for normally off type GaN-FET
    2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012
    Co-Authors: Hirokatsu Umegami, Masayoshi Yamamoto, Yu Nozaki, Osamu Machida
    Abstract:

    A novel Drive Circuit suitable for next generation semiconductor, GaN-FET (Gallium Nitride Field Effect Transistor), have been proposed and discussed in this paper. Drive loss is also analyzed on respective methods. Furthermore, the problem which is loss increase one of body diode in GaN-FET has been pointed out, and a novel active discharged type Gate Drive Circuit suitable for GaN-FET is proposed. Its operating principles and low loss operation are discussed and evaluated effectiveness from the experimental point of view.