The Experts below are selected from a list of 1317 Experts worldwide ranked by ideXlab platform

T Tansatit - One of the best experts on this subject based on the ideXlab platform.

  • effects of internal feedback and Gate Drive Signal on the turn off loss of mosfet zvs
    IEEE Transactions on Industry Applications, 2009
    Co-Authors: Y Kulvitit, P Opanuruk, T Tansatit
    Abstract:

    The effects of internal feedback through device parasitic capacitances and inductances associated with the Gate-Drive Signal on the turn-off loss of a MOSFET operating as a zero-voltage switch in a class-D resonant inverter were studied. Expressions relating the parameters of Miller feedback and Gate-Drive circuit to Miller voltage were formulated. Impeding turn-off and return on of the conduction channel were found to be responsible for higher turn-off loss. Switching trajectories, energy transferred into the MOSFET in each switching cycle, as well as turn-off loss for different Gate-Drive Signals, were calculated using data obtained from computer simulations. The results were compared with those calculated from experimental data. The voltage-dependent parasitic capacitances of the MOSFET were estimated from the experimental data and used for the calculation of channel current.

  • effects of internal feedback and Gate Drive Signal on the turn off loss of mosfet zvs
    International Conference on Power Electronics and Drive Systems, 2007
    Co-Authors: Y Kulvitit, P Opanuruk, T Tansatit
    Abstract:

    This paper studies the effects of internal feedback through device's parasitic capacitances and inductances associated with Gate-Drive Signal on the turn-off loss of MOSFET operates as zero-voltage switch in Class-D resonant inverter. Expressions relating parameters of Miller feedback and Gate-Drive circuit to Miller voltage were derived. Impeding turn-off and re-turn-on of conduction channel are responsible for higher turn-off loss. Switching trajectory, energy transferred into the MOSFET in each switching cycle, as well as turn-off loss for different Gate- Drive Signal were calculated using data obtained from computer simulations. The results are compared with those calculated from experimental data. Voltage dependent parasitic capacitances of the MOSFET were estimated from experimental data and used for the calculation channel current.

Y Kulvitit - One of the best experts on this subject based on the ideXlab platform.

  • effects of internal feedback and Gate Drive Signal on the turn off loss of mosfet zvs
    IEEE Transactions on Industry Applications, 2009
    Co-Authors: Y Kulvitit, P Opanuruk, T Tansatit
    Abstract:

    The effects of internal feedback through device parasitic capacitances and inductances associated with the Gate-Drive Signal on the turn-off loss of a MOSFET operating as a zero-voltage switch in a class-D resonant inverter were studied. Expressions relating the parameters of Miller feedback and Gate-Drive circuit to Miller voltage were formulated. Impeding turn-off and return on of the conduction channel were found to be responsible for higher turn-off loss. Switching trajectories, energy transferred into the MOSFET in each switching cycle, as well as turn-off loss for different Gate-Drive Signals, were calculated using data obtained from computer simulations. The results were compared with those calculated from experimental data. The voltage-dependent parasitic capacitances of the MOSFET were estimated from the experimental data and used for the calculation of channel current.

  • effects of internal feedback and Gate Drive Signal on the turn off loss of mosfet zvs
    International Conference on Power Electronics and Drive Systems, 2007
    Co-Authors: Y Kulvitit, P Opanuruk, T Tansatit
    Abstract:

    This paper studies the effects of internal feedback through device's parasitic capacitances and inductances associated with Gate-Drive Signal on the turn-off loss of MOSFET operates as zero-voltage switch in Class-D resonant inverter. Expressions relating parameters of Miller feedback and Gate-Drive circuit to Miller voltage were derived. Impeding turn-off and re-turn-on of conduction channel are responsible for higher turn-off loss. Switching trajectory, energy transferred into the MOSFET in each switching cycle, as well as turn-off loss for different Gate- Drive Signal were calculated using data obtained from computer simulations. The results are compared with those calculated from experimental data. Voltage dependent parasitic capacitances of the MOSFET were estimated from experimental data and used for the calculation channel current.

Laili Wang - One of the best experts on this subject based on the ideXlab platform.

  • a novel active voltage clamping circuit topology for series connection of sic mosfet s
    IEEE Transactions on Power Electronics, 2021
    Co-Authors: Fan Zhang, Yu Ren, Xu Yang, Wenjie Chen, Laili Wang
    Abstract:

    Series-connection of silicon carbide (SiC)-MOSFETs is an attractive method to achieve a high-voltage and fast-switching power semiconductor switch. In order to deal with the unequal voltage sharing problem in such series connection method, a novel active voltage clamping circuit topology is proposed in this letter. The maximum drain–source voltages of the series-connected SiC-MOSFETs are clamped by individual clamping capacitors; therefore, high reliable switching of the power semiconductors is guaranteed. Besides, the accumulated energy in the clamping capacitors can be actively transferred back into the power supply through a simple Gate Drive Signal adjustment algorithm; thus, the induced clamping circuit loss can be effectively suppressed. The proposed active clamping topology has been experimentally verified in a half-bridge inverter with four SiC-MOSFETs connected in series.

P Opanuruk - One of the best experts on this subject based on the ideXlab platform.

  • effects of internal feedback and Gate Drive Signal on the turn off loss of mosfet zvs
    IEEE Transactions on Industry Applications, 2009
    Co-Authors: Y Kulvitit, P Opanuruk, T Tansatit
    Abstract:

    The effects of internal feedback through device parasitic capacitances and inductances associated with the Gate-Drive Signal on the turn-off loss of a MOSFET operating as a zero-voltage switch in a class-D resonant inverter were studied. Expressions relating the parameters of Miller feedback and Gate-Drive circuit to Miller voltage were formulated. Impeding turn-off and return on of the conduction channel were found to be responsible for higher turn-off loss. Switching trajectories, energy transferred into the MOSFET in each switching cycle, as well as turn-off loss for different Gate-Drive Signals, were calculated using data obtained from computer simulations. The results were compared with those calculated from experimental data. The voltage-dependent parasitic capacitances of the MOSFET were estimated from the experimental data and used for the calculation of channel current.

  • effects of internal feedback and Gate Drive Signal on the turn off loss of mosfet zvs
    International Conference on Power Electronics and Drive Systems, 2007
    Co-Authors: Y Kulvitit, P Opanuruk, T Tansatit
    Abstract:

    This paper studies the effects of internal feedback through device's parasitic capacitances and inductances associated with Gate-Drive Signal on the turn-off loss of MOSFET operates as zero-voltage switch in Class-D resonant inverter. Expressions relating parameters of Miller feedback and Gate-Drive circuit to Miller voltage were derived. Impeding turn-off and re-turn-on of conduction channel are responsible for higher turn-off loss. Switching trajectory, energy transferred into the MOSFET in each switching cycle, as well as turn-off loss for different Gate- Drive Signal were calculated using data obtained from computer simulations. The results are compared with those calculated from experimental data. Voltage dependent parasitic capacitances of the MOSFET were estimated from experimental data and used for the calculation channel current.

J L F Vieira - One of the best experts on this subject based on the ideXlab platform.

  • a high performance zvs full bridge dc dc 0 50 v 0 10 a power supply with phase shift control
    Power Electronics Specialists Conference, 1997
    Co-Authors: M Brunoro, J L F Vieira
    Abstract:

    This paper presents a high-performance DC-DC switching mode power supply designed to deliver a regulated 0-50 V/0-10 A output. The proposed power supply is based on a modified version of the zero-voltage switching (ZVS) full-bridge (FB) phase-shift DC-DC converter, which incorporates commutation auxiliary inductors to provide ZVS for the entire load range as well as a commutation aid circuit to clamp the output diode voltage. The control strategy is based on two control loops operating in cascade mode. The inner loop maintains a regulated output current, whereas the external voltage loop regulates the output voltage, independently of load and input-voltage changes. In order to obtain a high-reliability converter, the control circuit has been implemented using just two integrated circuits (ICs). The phase-shift regulator UC3875 IC generates the Gate Drive Signal to the MOSFET's. The control loop regulators are implemented using the TL074 IC. A theoretical analysis was conducted, and experimental results were obtained for a 0-50 V/0-10 A power supply operating at 100 kHz.