The Experts below are selected from a list of 11604 Experts worldwide ranked by ideXlab platform
C K Maiti - One of the best experts on this subject based on the ideXlab platform.
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impact of buffer layer on atomic layer deposited tialo alloy dielectric quality for epitaxial gaas Ge Device application
IEEE Transactions on Electron Devices, 2013Co-Authors: G K Dalapati, C K Chia, C Mahata, S Krishnamoorthy, C K MaitiAbstract:The impact of AlGaAs and AlAs buffer layers on the electrical properties of an epitaxial gallium-arsenide (epi-GaAs) metal-oxide-semiconductor capacitor (MOSC) was investigated. MOSC was fabricated by using atomic-layer-deposited Al2O3 -TiO2 (TiAlO) alloy gate dielectric and epi-GaAs layers. The epi-GaAs layer was grown on Ge substrates at 675 °C with and without buffer layer between epi-GaAs layer and Ge substrates. The TiAlO/epi-GaAs interface with an AlGaAs buffer layer allows realizing a high-quality interface between epi-GaAs layers and TiAlO dielectric, much sought after for high-speed transistor applications on a silicon platform. TiAlO dielectric is amorphous even upon annealing at 500 °C and exhibits a sharp interface with epi-GaAs layers. The choice of AlGaAs over AlAs for a buffer layer was made based on the quality of resulting TiAlO/epi-GaAs surface passivation as evident through structural and electrical characteristics. Epi-GaAs with an AlGaAs buffer layer was found to improve the performance of the MOSC significantly through increase in accumulation capacitance and breakdown voltaGe. The interface state density, flatband voltaGe, frequency dispersion, and leakaGe current were decreased for the MOSC fabricated with an AlGaAs buffer layer.
Daniel Delprat - One of the best experts on this subject based on the ideXlab platform.
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high performance Germanium omega gate mugfet with schottky barrier nickel Germanide source drain and low temperature disilane passivated gate stack
IEEE Electron Device Letters, 2012Co-Authors: Bin Liu, Xiao Gong, Qian Zhou, Genquan Han, Pohchong Lim, Yi Tong, Yue Yang, Nicolas Daval, Christelle Veytizou, Daniel DelpratAbstract:We report high-performance p-channel Ω-gate Germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si2H6 surface passivation and Schottky-barrier nickel Germanide (NiGe) metallic source/drain, fabricated on high-quality Germanium-on-insulator (GeOI) substrates using sub-400°C process modules. As compared with other reported p-channel multigate Ge Devices formed by top-down approaches, the Ge MuGFETs in this letter have a record-high ON-state current ION of ~450 μA/μm at VGS - VTH = -1 V and VDS = - 1 V. High peak intrinsic saturation transconductance of ~740 μS/μm and low OFF-state current are reported. We also study the effect of fin or channel doping on Ge MuGFET performance. The simple MuGFET process developed using GeOI substrate would be a good reference for future 3-D Ge Device fabrication.
T. Schroeder - One of the best experts on this subject based on the ideXlab platform.
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Growth and evolution of nickel Germanide nanostructures on Ge(001)
Nanotechnology, 2015Co-Authors: T. Grzela, W. Koczorowski, M. A. Schubert, Th Schmidt, Ilona Heidmann, Ryszard Czajka, Jens Falta, Neil J. Curson, Giovanni Capellini, T. SchroederAbstract:Nickel Germanide is deemed an excellent material system for low resistance contact formation for future Ge Device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel Germanides on Ge(001).We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer–Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous NixGey wetting layer featuring welldefined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the NixGey terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular NixGey 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larGer ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-Germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110).
G K Dalapati - One of the best experts on this subject based on the ideXlab platform.
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impact of buffer layer on atomic layer deposited tialo alloy dielectric quality for epitaxial gaas Ge Device application
IEEE Transactions on Electron Devices, 2013Co-Authors: G K Dalapati, C K Chia, C Mahata, S Krishnamoorthy, C K MaitiAbstract:The impact of AlGaAs and AlAs buffer layers on the electrical properties of an epitaxial gallium-arsenide (epi-GaAs) metal-oxide-semiconductor capacitor (MOSC) was investigated. MOSC was fabricated by using atomic-layer-deposited Al2O3 -TiO2 (TiAlO) alloy gate dielectric and epi-GaAs layers. The epi-GaAs layer was grown on Ge substrates at 675 °C with and without buffer layer between epi-GaAs layer and Ge substrates. The TiAlO/epi-GaAs interface with an AlGaAs buffer layer allows realizing a high-quality interface between epi-GaAs layers and TiAlO dielectric, much sought after for high-speed transistor applications on a silicon platform. TiAlO dielectric is amorphous even upon annealing at 500 °C and exhibits a sharp interface with epi-GaAs layers. The choice of AlGaAs over AlAs for a buffer layer was made based on the quality of resulting TiAlO/epi-GaAs surface passivation as evident through structural and electrical characteristics. Epi-GaAs with an AlGaAs buffer layer was found to improve the performance of the MOSC significantly through increase in accumulation capacitance and breakdown voltaGe. The interface state density, flatband voltaGe, frequency dispersion, and leakaGe current were decreased for the MOSC fabricated with an AlGaAs buffer layer.
Bin Liu - One of the best experts on this subject based on the ideXlab platform.
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high performance Germanium omega gate mugfet with schottky barrier nickel Germanide source drain and low temperature disilane passivated gate stack
IEEE Electron Device Letters, 2012Co-Authors: Bin Liu, Xiao Gong, Qian Zhou, Genquan Han, Pohchong Lim, Yi Tong, Yue Yang, Nicolas Daval, Christelle Veytizou, Daniel DelpratAbstract:We report high-performance p-channel Ω-gate Germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si2H6 surface passivation and Schottky-barrier nickel Germanide (NiGe) metallic source/drain, fabricated on high-quality Germanium-on-insulator (GeOI) substrates using sub-400°C process modules. As compared with other reported p-channel multigate Ge Devices formed by top-down approaches, the Ge MuGFETs in this letter have a record-high ON-state current ION of ~450 μA/μm at VGS - VTH = -1 V and VDS = - 1 V. High peak intrinsic saturation transconductance of ~740 μS/μm and low OFF-state current are reported. We also study the effect of fin or channel doping on Ge MuGFET performance. The simple MuGFET process developed using GeOI substrate would be a good reference for future 3-D Ge Device fabrication.
