The Experts below are selected from a list of 1851 Experts worldwide ranked by ideXlab platform
Kaoru Toko - One of the best experts on this subject based on the ideXlab platform.
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high photoresponsivity in a gaas film synthesized on glass using a pseudo single crystal Ge seed layer
Applied Physics Letters, 2019Co-Authors: Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.
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High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
American Institute of Physics, 2019Co-Authors: 末益 崇, Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, 都甲 薫, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.This work was supported financially by the JSPS KAKENHI (No. 17H04918). The authors are grateful to Dr. Y. Tominaga (Hiroshima University) for helpful discussions and Professor N. Usami (Nagoya University) for assistance with the microwave photoconductivity decay measurement. Some experiments were conducted at the International Center for Young Scientists at NIMS and the Nanotechnology Platform at the University of Tsukuba
Takeshi Nishida - One of the best experts on this subject based on the ideXlab platform.
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high photoresponsivity in a gaas film synthesized on glass using a pseudo single crystal Ge seed layer
Applied Physics Letters, 2019Co-Authors: Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.
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High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
American Institute of Physics, 2019Co-Authors: 末益 崇, Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, 都甲 薫, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.This work was supported financially by the JSPS KAKENHI (No. 17H04918). The authors are grateful to Dr. Y. Tominaga (Hiroshima University) for helpful discussions and Professor N. Usami (Nagoya University) for assistance with the microwave photoconductivity decay measurement. Some experiments were conducted at the International Center for Young Scientists at NIMS and the Nanotechnology Platform at the University of Tsukuba
Barresi A - One of the best experts on this subject based on the ideXlab platform.
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A CUPID Li2100MoO4scintillating bolometer tested in the CROSS underground facility
eScholarship University of California, 2021Co-Authors: Armatol A, Armengaud E, Armstrong W, Augier C, Iii Fta, Azzolini O, Ic Bandac, As Barabash, Bari G, Barresi AAbstract:A scintillating bolometer based on a larGe cubic Li2100MoO4 crystal (45 mm side) and a Ge Wafer (scintillation detector) has been operated in the CROSS cryoGenic facility at the Canfranc underground laboratory in Spain. The dual-readout detector is a prototype of the technology that will be used in the next-Generation 0ν2β experiment CUPID . The measurements were performed at 18 and 12 mK temperature in a pulse tube dilution refriGerator. This setup utilizes the same technology as the CUORE cryostat that will host CUPID and so represents an accurate estimation of the expected performance. The Li2100MoO4 bolometer shows a high energy resolution of 6 keV FWHM at the 2615 keV γ line. The detection of scintillation light for each event trigGered by the Li2100MoO4 bolometer allowed for a full separation (∼8σ) between γ(β) and α events above 2 MeV . The Li2100MoO4 crystal also shows a high internal radiopurity with 228Th and 226Ra activities of less than 3 and 8 μBq/kg, respectively. Taking also into account the advantaGe of a more compact and massive detector array, which can be made of cubic-shaped crystals (compared to the cylindrical ones), this test demonstrates the great potential of cubic Li2100MoO4 scintillating bolometers for high-sensitivity searches for the 100Mo 0ν2β decay in CROSS and CUPID projects
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A CUPID (Li2MoO4)-Mo-100 scintillating bolometer tested in the CROSS underground facility
eScholarship University of California, 2021Co-Authors: Armatol A, Armengaud E, Armstrong W, Augier C, Azzolini O, Ic Bandac, As Barabash, Bari G, Avignone Ft Iii, Barresi AAbstract:A scintillating bolometer based on a larGe cubic Li$_{2}$$^{100}$MoO$_4$ crystal (45 mm side) and a Ge Wafer (scintillation detector) has been operated in the CROSS cryoGenic facility at the Canfranc underground laboratory in Spain. The dual-readout detector is a prototype of the technology that will be used in the next-Generation $0\nu2\beta$ experiment CUPID. The measurements were performed at 18 and 12 mK temperature in a pulse tube dilution refriGerator. This setup utilizes the same technology as the CUORE cryostat that will host CUPID and so represents an accurate estimation of the expected performance. The Li$_{2}$$^{100}$MoO$_4$ bolometer shows a high energy resolution of 6 keV FWHM at the 2615 keV $\gamma$ line. The detection of scintillation light for each event trigGered by the Li$_{2}$$^{100}$MoO$_4$ bolometer allowed for a full separation ($\sim$8$\sigma$) between $\gamma$($\beta$) and $\alpha$ events above 2 MeV. The Li$_{2}$$^{100}$MoO$_4$ crystal also shows a high internal radiopurity with $^{228}$Th and $^{226}$Ra activities of less than 3 and 8 $\mu$Bq/kg, respectively. Taking also into account the advantaGe of a more compact and massive detector array, which can be made of cubic-shaped crystals (compared to the cylindrical ones), this test demonstrates the great potential of cubic Li$_{2}$$^{100}$MoO$_4$ scintillating bolometers for high-sensitivity searches for the $^{100}$Mo $0\nu2\beta$ decay in CROSS and CUPID projects
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A CUPID Li$_2$ $^{100} $MoO$_4$ scintillating bolometer tested in the CROSS underground facility
'IOP Publishing', 2021Co-Authors: Armatol A, Armengaud E, Armstrong W, Augier C, Azzolini O, Bari G, Avignone Iii F. T., Bandac I. C., Barabash A. S., Barresi AAbstract:19 paGes, 7 figures, 1 tableInternational audienceA scintillating bolometer based on a larGe cubic Li$_{2}$$^{100}$MoO$_4$ crystal (45 mm side) and a Ge Wafer (scintillation detector) has been operated in the CROSS cryoGenic facility at the Canfranc underground laboratory in Spain. The dual-readout detector is a prototype of the technology that will be used in the next-Generation $0\nu2\beta$ experiment CUPID. The measurements were performed at 18 and 12 mK temperature in a pulse tube dilution refriGerator. This setup utilizes the same technology as the CUORE cryostat that will host CUPID and so represents an accurate estimation of the expected performance. The Li$_{2}$$^{100}$MoO$_4$ bolometer shows a high energy resolution of 6 keV FWHM at the 2615 keV $\gamma$ line. The detection of scintillation light for each event trigGered by the Li$_{2}$$^{100}$MoO$_4$ bolometer allowed for a full separation ($\sim$8$\sigma$) between $\gamma$($\beta$) and $\alpha$ events above 2 MeV. The Li$_{2}$$^{100}$MoO$_4$ crystal also shows a high internal radiopurity with $^{228}$Th and $^{226}$Ra activities of less than 3 and 8 $\mu$Bq/kg, respectively. Taking also into account the advantaGe of a more compact and massive detector array, which can be made of cubic-shaped crystals (compared to the cylindrical ones), this test demonstrates the great potential of cubic Li$_{2}$$^{100}$MoO$_4$ scintillating bolometers for high-sensitivity searches for the $^{100}$Mo $0\nu2\beta$ decay in CROSS and CUPID projects
Noriko Yoshizawa - One of the best experts on this subject based on the ideXlab platform.
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high photoresponsivity in a gaas film synthesized on glass using a pseudo single crystal Ge seed layer
Applied Physics Letters, 2019Co-Authors: Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.
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High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
American Institute of Physics, 2019Co-Authors: 末益 崇, Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, 都甲 薫, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.This work was supported financially by the JSPS KAKENHI (No. 17H04918). The authors are grateful to Dr. Y. Tominaga (Hiroshima University) for helpful discussions and Professor N. Usami (Nagoya University) for assistance with the microwave photoconductivity decay measurement. Some experiments were conducted at the International Center for Young Scientists at NIMS and the Nanotechnology Platform at the University of Tsukuba
Takashi Suemasu - One of the best experts on this subject based on the ideXlab platform.
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high photoresponsivity in a gaas film synthesized on glass using a pseudo single crystal Ge seed layer
Applied Physics Letters, 2019Co-Authors: Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.
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High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
American Institute of Physics, 2019Co-Authors: 末益 崇, Takeshi Nishida, Kenta Moto, N Saitoh, Noriko Yoshizawa, Takashi Suemasu, 都甲 薫, Kaoru TokoAbstract:Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a larGe-grained Ge layer on glass, formed by Al-induced layer exchanGe, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 °C, became a pseudosingle crystal (grain size > 100 μm) with high (111) orientation. Reflecting the larGe grain size, the internal quantum efficiency reached 70% under a bias voltaGe of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge Wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchanGe offers excellent potential to develop high-efficiency thin-film solar cells with III–V compound semiconductors based on low-cost glass substrates.This work was supported financially by the JSPS KAKENHI (No. 17H04918). The authors are grateful to Dr. Y. Tominaga (Hiroshima University) for helpful discussions and Professor N. Usami (Nagoya University) for assistance with the microwave photoconductivity decay measurement. Some experiments were conducted at the International Center for Young Scientists at NIMS and the Nanotechnology Platform at the University of Tsukuba
