The Experts below are selected from a list of 2235 Experts worldwide ranked by ideXlab platform
Sanggeun Jeon - One of the best experts on this subject based on the ideXlab platform.
-
a 220 320 ghz vector sum phase shifter using single Gilbert Cell structure with lossy output matching
IEEE Transactions on Microwave Theory and Techniques, 2015Co-Authors: M Urteaga, Sanggeun JeonAbstract:This paper presents a wideband vector-sum phase shifter (VSPS) that operates over the entire WR-3 band (220–320 GHz). Compared to conventional VSPSs with double Gilbert Cells, the proposed phase shifter employs a single Gilbert-Cell structure for vector modulation. This reduces the output current combining ratio from 8:2 to 4:2, and boosts the impedance at the combining node, thus facilitating wideband output matching at upper millimeter-wave and terahertz bands. The simplified structure leads to a reduction in dc power consumption and chip area without sacrificing the 360 $^{\circ}$ phase-shifting property. Lossy matching is applied at the Gilbert-Cell output to further increase bandwidth and stability at the expense of relatively high loss. The phase shifter is implemented using a 250-nm InP DHBT technology that provides $f _{ T}$ and $f _{\max}$ exceeding 370 and 650 GHz, respectively. The measurements exhibit a wideband phase shift with continuous 360 $^{\circ}$ coverage and average insertion loss ranging from 11.8 to 15.6 dB for the entire WR-3 band. The root mean square amplitude and phase error among different phase states are less than 1.2 dB and 10.2 $^{\circ}$ , respectively. The input-referred 1-dB compression is measured at ${\hbox{0.7 dBm}}$ on average. The dc power consumption is 21.8–42.0 mW at different phase states.
-
A 220–320-GHz Vector-Sum Phase Shifter Using Single Gilbert-Cell Structure With Lossy Output Matching
IEEE Transactions on Microwave Theory and Techniques, 2015Co-Authors: Younghwan Kim, M Urteaga, Sooyeon Kim, Iljin Lee, Sanggeun JeonAbstract:This paper presents a wideband vector-sum phase shifter (VSPS) that operates over the entire WR-3 band (220–320 GHz). Compared to conventional VSPSs with double Gilbert Cells, the proposed phase shifter employs a single Gilbert-Cell structure for vector modulation. This reduces the output current combining ratio from 8:2 to 4:2, and boosts the impedance at the combining node, thus facilitating wideband output matching at upper millimeter-wave and terahertz bands. The simplified structure leads to a reduction in dc power consumption and chip area without sacrificing the 360 $^{\circ}$ phase-shifting property. Lossy matching is applied at the Gilbert-Cell output to further increase bandwidth and stability at the expense of relatively high loss. The phase shifter is implemented using a 250-nm InP DHBT technology that provides $f _{ T}$ and $f _{\max}$ exceeding 370 and 650 GHz, respectively. The measurements exhibit a wideband phase shift with continuous 360 $^{\circ}$ coverage and average insertion loss ranging from 11.8 to 15.6 dB for the entire WR-3 band. The root mean square amplitude and phase error among different phase states are less than 1.2 dB and 10.2 $^{\circ}$ , respectively. The input-referred 1-dB compression is measured at ${\hbox{0.7 dBm}}$ on average. The dc power consumption is 21.8–42.0 mW at different phase states.
Herbert Zirath - One of the best experts on this subject based on the ideXlab platform.
-
design and analysis of a wideband Gilbert Cell vga in 0 25 mu rm m inp dhbt technology with dc 40 ghz frequency response
IEEE Transactions on Microwave Theory and Techniques, 2017Co-Authors: Marcus Gavell, Sten E. Gunnarsson, Iltcho Angelov, Mattias Ferndahl, Herbert ZirathAbstract:A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- $\rm \mu m$ InP double heterojunction bipolar transistor technology with $f_{T}/f_{\mathrm{ max}}$ of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert Cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single −7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 $\rm mm^{2}$ . We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
-
Design and Analysis of a Wideband Gilbert Cell VGA in 0.25- $\mu {\rm m}$ InP DHBT Technology With DC-40-GHz Frequency Response
IEEE Transactions on Microwave Theory and Techniques, 2017Co-Authors: Marcus Gavell, Sten E. Gunnarsson, Iltcho Angelov, Mattias Ferndahl, Herbert ZirathAbstract:A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- $\rm \mu m$ InP double heterojunction bipolar transistor technology with $f_{T}/f_{\mathrm{ max}}$ of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert Cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single −7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 $\rm mm^{2}$ . We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
-
A Fundamental Upconverting Gilbert Mixer for 100 GHz Wireless Applications
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010Co-Authors: Marcus Gavell, M Urteaga, Mattias Ferndahl, Herbert Zirath, Richard PiersonAbstract:The design and characterization of an up-converting double balanced Gilbert Cell mixer in a 0.5 µm InP DHBT process for applications in the 81-102 GHz range is presented. The process features a 4-metal layer stackup that invites to more complex designs compared to most III-V technologies. The presented mixer is a double balanced Gilbert Cell design and includes an LO buffer amplifier as well as RF and LO Marchand baluns integrated on chip. The Gilbert Cell mixer show exCellent results in terms of; conversion gain of 13 dB, LO-RF isolation of 47 dB, output P1dB equals -10 dBm and the total power consumption is 170 mW. The frequency bandwidth covers 81 to 102 GHz.
-
Comparative investigation between a single ended and a balanced IF VGA
2006 European Microwave Conference, 2006Co-Authors: M.a. Masud, Herbert ZirathAbstract:Variable gain IF amplifier (VGA) based on single ended and Gilbert Cell topology have been designed and characterized. A comparative investigation has been carried out between the two topologies. The source feedback topology has been used for the single ended VGA and for the Gilbert Cell VGA, the gain is controlled by steering the drain current. Overall dynamic gain variation range is 13 dB with a maximum gain of 13 dB for the single ended VGA whereas for the Gilbert Cell VGA, it is 16 dB and 10 dB, respectively. The -3 dB bandwidth is 4 GHz and the maximum value of 1 dB output compression is -6.2 dBm for the single ended VGA. The measured IP3 is 8.2 dBm referred to the output. DC power consumption is 75 mW. For the Gilbert Cell VGA, the -3 dB bandwidth is 2.25 GHz and maximum dissipated DC power is 100 mW. Maximum value of 1 dB compression point and IP3, both referred to the output, are 2 dBm and 9.87 dBm, respectively. Both the circuits were implemented on 0.15mum GaAs pHEMT technology. The active circuit area of Gilbert Cell VGA is 1.7 mm times 1.6 mm and the single ended VGA is 1.3 mm times 1.3 mm
M Urteaga - One of the best experts on this subject based on the ideXlab platform.
-
a 220 320 ghz vector sum phase shifter using single Gilbert Cell structure with lossy output matching
IEEE Transactions on Microwave Theory and Techniques, 2015Co-Authors: M Urteaga, Sanggeun JeonAbstract:This paper presents a wideband vector-sum phase shifter (VSPS) that operates over the entire WR-3 band (220–320 GHz). Compared to conventional VSPSs with double Gilbert Cells, the proposed phase shifter employs a single Gilbert-Cell structure for vector modulation. This reduces the output current combining ratio from 8:2 to 4:2, and boosts the impedance at the combining node, thus facilitating wideband output matching at upper millimeter-wave and terahertz bands. The simplified structure leads to a reduction in dc power consumption and chip area without sacrificing the 360 $^{\circ}$ phase-shifting property. Lossy matching is applied at the Gilbert-Cell output to further increase bandwidth and stability at the expense of relatively high loss. The phase shifter is implemented using a 250-nm InP DHBT technology that provides $f _{ T}$ and $f _{\max}$ exceeding 370 and 650 GHz, respectively. The measurements exhibit a wideband phase shift with continuous 360 $^{\circ}$ coverage and average insertion loss ranging from 11.8 to 15.6 dB for the entire WR-3 band. The root mean square amplitude and phase error among different phase states are less than 1.2 dB and 10.2 $^{\circ}$ , respectively. The input-referred 1-dB compression is measured at ${\hbox{0.7 dBm}}$ on average. The dc power consumption is 21.8–42.0 mW at different phase states.
-
A 220–320-GHz Vector-Sum Phase Shifter Using Single Gilbert-Cell Structure With Lossy Output Matching
IEEE Transactions on Microwave Theory and Techniques, 2015Co-Authors: Younghwan Kim, M Urteaga, Sooyeon Kim, Iljin Lee, Sanggeun JeonAbstract:This paper presents a wideband vector-sum phase shifter (VSPS) that operates over the entire WR-3 band (220–320 GHz). Compared to conventional VSPSs with double Gilbert Cells, the proposed phase shifter employs a single Gilbert-Cell structure for vector modulation. This reduces the output current combining ratio from 8:2 to 4:2, and boosts the impedance at the combining node, thus facilitating wideband output matching at upper millimeter-wave and terahertz bands. The simplified structure leads to a reduction in dc power consumption and chip area without sacrificing the 360 $^{\circ}$ phase-shifting property. Lossy matching is applied at the Gilbert-Cell output to further increase bandwidth and stability at the expense of relatively high loss. The phase shifter is implemented using a 250-nm InP DHBT technology that provides $f _{ T}$ and $f _{\max}$ exceeding 370 and 650 GHz, respectively. The measurements exhibit a wideband phase shift with continuous 360 $^{\circ}$ coverage and average insertion loss ranging from 11.8 to 15.6 dB for the entire WR-3 band. The root mean square amplitude and phase error among different phase states are less than 1.2 dB and 10.2 $^{\circ}$ , respectively. The input-referred 1-dB compression is measured at ${\hbox{0.7 dBm}}$ on average. The dc power consumption is 21.8–42.0 mW at different phase states.
-
A Fundamental Upconverting Gilbert Mixer for 100 GHz Wireless Applications
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010Co-Authors: Marcus Gavell, M Urteaga, Mattias Ferndahl, Herbert Zirath, Richard PiersonAbstract:The design and characterization of an up-converting double balanced Gilbert Cell mixer in a 0.5 µm InP DHBT process for applications in the 81-102 GHz range is presented. The process features a 4-metal layer stackup that invites to more complex designs compared to most III-V technologies. The presented mixer is a double balanced Gilbert Cell design and includes an LO buffer amplifier as well as RF and LO Marchand baluns integrated on chip. The Gilbert Cell mixer show exCellent results in terms of; conversion gain of 13 dB, LO-RF isolation of 47 dB, output P1dB equals -10 dBm and the total power consumption is 170 mW. The frequency bandwidth covers 81 to 102 GHz.
Marcus Gavell - One of the best experts on this subject based on the ideXlab platform.
-
design and analysis of a wideband Gilbert Cell vga in 0 25 mu rm m inp dhbt technology with dc 40 ghz frequency response
IEEE Transactions on Microwave Theory and Techniques, 2017Co-Authors: Marcus Gavell, Sten E. Gunnarsson, Iltcho Angelov, Mattias Ferndahl, Herbert ZirathAbstract:A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- $\rm \mu m$ InP double heterojunction bipolar transistor technology with $f_{T}/f_{\mathrm{ max}}$ of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert Cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single −7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 $\rm mm^{2}$ . We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
-
Design and Analysis of a Wideband Gilbert Cell VGA in 0.25- $\mu {\rm m}$ InP DHBT Technology With DC-40-GHz Frequency Response
IEEE Transactions on Microwave Theory and Techniques, 2017Co-Authors: Marcus Gavell, Sten E. Gunnarsson, Iltcho Angelov, Mattias Ferndahl, Herbert ZirathAbstract:A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- $\rm \mu m$ InP double heterojunction bipolar transistor technology with $f_{T}/f_{\mathrm{ max}}$ of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert Cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single −7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 $\rm mm^{2}$ . We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
-
A Fundamental Upconverting Gilbert Mixer for 100 GHz Wireless Applications
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010Co-Authors: Marcus Gavell, M Urteaga, Mattias Ferndahl, Herbert Zirath, Richard PiersonAbstract:The design and characterization of an up-converting double balanced Gilbert Cell mixer in a 0.5 µm InP DHBT process for applications in the 81-102 GHz range is presented. The process features a 4-metal layer stackup that invites to more complex designs compared to most III-V technologies. The presented mixer is a double balanced Gilbert Cell design and includes an LO buffer amplifier as well as RF and LO Marchand baluns integrated on chip. The Gilbert Cell mixer show exCellent results in terms of; conversion gain of 13 dB, LO-RF isolation of 47 dB, output P1dB equals -10 dBm and the total power consumption is 170 mW. The frequency bandwidth covers 81 to 102 GHz.
Younghwan Kim - One of the best experts on this subject based on the ideXlab platform.
-
A 220–320-GHz Vector-Sum Phase Shifter Using Single Gilbert-Cell Structure With Lossy Output Matching
IEEE Transactions on Microwave Theory and Techniques, 2015Co-Authors: Younghwan Kim, M Urteaga, Sooyeon Kim, Iljin Lee, Sanggeun JeonAbstract:This paper presents a wideband vector-sum phase shifter (VSPS) that operates over the entire WR-3 band (220–320 GHz). Compared to conventional VSPSs with double Gilbert Cells, the proposed phase shifter employs a single Gilbert-Cell structure for vector modulation. This reduces the output current combining ratio from 8:2 to 4:2, and boosts the impedance at the combining node, thus facilitating wideband output matching at upper millimeter-wave and terahertz bands. The simplified structure leads to a reduction in dc power consumption and chip area without sacrificing the 360 $^{\circ}$ phase-shifting property. Lossy matching is applied at the Gilbert-Cell output to further increase bandwidth and stability at the expense of relatively high loss. The phase shifter is implemented using a 250-nm InP DHBT technology that provides $f _{ T}$ and $f _{\max}$ exceeding 370 and 650 GHz, respectively. The measurements exhibit a wideband phase shift with continuous 360 $^{\circ}$ coverage and average insertion loss ranging from 11.8 to 15.6 dB for the entire WR-3 band. The root mean square amplitude and phase error among different phase states are less than 1.2 dB and 10.2 $^{\circ}$ , respectively. The input-referred 1-dB compression is measured at ${\hbox{0.7 dBm}}$ on average. The dc power consumption is 21.8–42.0 mW at different phase states.