The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform

Nam Ki Min - One of the best experts on this subject based on the ideXlab platform.

  • Glass-Frit Bonding of silicon strain gages on large thermal-expansion-mismatched metallic substrates
    Sensors and Actuators A: Physical, 2018
    Co-Authors: Ki Beom Kim, Jin Woong Kim, Chan Won Park, Joon Kim, Nam Ki Min
    Abstract:

    Abstract Bonding of silicon strain gages on stainless-steel substrates is a critical issue in diaphragm-type pressure sensors because of the large mismatch in coefficients of thermal expansion between silicon and metal resulting in serious reliability problems. A new method to significantly improve the Glass-Frit Bonding of silicon gages on metal diaphragms is reported based on an intermediate thin Glass plate onto which silicon strain gages are fabricated. The Glass interlayer enables very reliable bonds without post-bond misalignment, deBonding, or cracking through the selection of Glasses that very closely match silicon and the compressive surface strengthening of Glasses. Furthermore, the proposed gage structure provides great improvement in the electrical performance, especially the thermal drifts of offset (zero) and span of Si strain-gage-based bridge transducers.

  • Design, fabrication, and characterization of piezoresisitve strain gage-based pressure sensors for mechatronic systems
    2015 IEEE International Workshop of Electronics Control Measurement Signals and their Application to Mechatronics (ECMSM), 2015
    Co-Authors: Seungwoo Ham, Ki Beom Kim, Jin Woong Kim, Nam Ki Min, Wooseok Choi, Chan Won Park
    Abstract:

    The pressure sensor is a key device in many mechatronic systems for automotive and industrial applications. We represent the piezoresitive pressure sensor based on the single crystal silicon strain gauges, which are Glass-fused to the stainless steel diaphragm at high temperature. The silicon bulkmicromachined strain gauges have the through holes and the closed structure, unlike the current competitive devices with open structure. This unique design concept reduces shifting or rotation of gauge position during Glass Frit Bonding and enables the automation of alignment and Bonding processes, which improves the sensor performance and yield and hence reduces sensor cost. The prototype was characterized using specific long term tests such as PPTCB (pulsed pressure, temperature cycling, with bias). The pressure sensors tested under pressure ranging from 0 to 50 bar at different temperature have a linear output with a typical sensitivity of about 16mV/V/bar and an offset drift of –6 mV to 2 mV. The fatigue life tests run at a rate of 3 Hz up to 2 million pressure cycles from 0 to 50 bar showed no failures when the pressure cycle test was stopped.

Sheng Liu - One of the best experts on this subject based on the ideXlab platform.

  • silicon strain gages bonded on stainless steel using Glass Frit for strain sensor applications
    Measurement Science and Technology, 2014
    Co-Authors: Zongyang Zhang, Xingguo Cheng, Yi Leng, Gang Cao, Sheng Liu
    Abstract:

    In this paper, a steel pressure sensor using strain gages bonded on a 17–4 PH stainless steel (SS) diaphragm based on Glass Frit technology is proposed. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique. The inorganic Glass Frits are used as the Bonding material between the strain gages and the 17–4 PH SS diaphragm. Our results show that the output performances of sensors at a high temperature of 125 °C are almost equal those at room temperature, which indicates that the Glass Frit Bonding is a good method and may lead to a significant advance in the high temperature applicability of silicon strain gage sensors. Finally, the microstructure of the cured organic adhesive and the fired Glass Frit are compared. It may be concluded that the defects of the cured organic adhesive deteriorate the hysteresis and repeatability errors of the sensors.

  • a steel pressure sensor based on micro fused Glass Frit technology
    International Conference on Electronic Packaging Technology, 2012
    Co-Authors: Zongyang Zhang, Xingguo Cheng, Xulong Gui, Xiaojie Che, Sheng Liu
    Abstract:

    In this paper, we propose a pressure sensor using strain gages bonded on 17-4PH stainless steel (SS) diaphragm based on micro-fused Glass Frit technology. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique rather than conventional photolithography and etching techniques. The inorganic micro-fused Glass Frits are used as the Bonding material between the strain gages and the 17-4PH SS diaphragm. Compared to organic adhesives, the Glass Frits Bonding material can minimize the hysteresis error in the high temperature applications and improve the mechanical properties of semiconductor strain gage based pressure transducers. After wire bonds being made between the two half bridge strain gages and an interface printed circuit board (PCB), the output characteristics of sensors are evaluated. Results show that the sensors exhibit a stable output with 0.045% full-scale (FS) hysteresis error, and linearity and repeatability are less than 0.04% FS 0.12% FS at the room temperature. Furthermore, the output performance of sensors in the high temperature of 125 °C almost equals that of the room temperature, which indicates that the Glass Frit Bonding is a good method which would lead to a significant advance in the high temperature applicability of silicon strain gage transducers.

Ki Beom Kim - One of the best experts on this subject based on the ideXlab platform.

  • Glass-Frit Bonding of silicon strain gages on large thermal-expansion-mismatched metallic substrates
    Sensors and Actuators A: Physical, 2018
    Co-Authors: Ki Beom Kim, Jin Woong Kim, Chan Won Park, Joon Kim, Nam Ki Min
    Abstract:

    Abstract Bonding of silicon strain gages on stainless-steel substrates is a critical issue in diaphragm-type pressure sensors because of the large mismatch in coefficients of thermal expansion between silicon and metal resulting in serious reliability problems. A new method to significantly improve the Glass-Frit Bonding of silicon gages on metal diaphragms is reported based on an intermediate thin Glass plate onto which silicon strain gages are fabricated. The Glass interlayer enables very reliable bonds without post-bond misalignment, deBonding, or cracking through the selection of Glasses that very closely match silicon and the compressive surface strengthening of Glasses. Furthermore, the proposed gage structure provides great improvement in the electrical performance, especially the thermal drifts of offset (zero) and span of Si strain-gage-based bridge transducers.

  • Design, fabrication, and characterization of piezoresisitve strain gage-based pressure sensors for mechatronic systems
    2015 IEEE International Workshop of Electronics Control Measurement Signals and their Application to Mechatronics (ECMSM), 2015
    Co-Authors: Seungwoo Ham, Ki Beom Kim, Jin Woong Kim, Nam Ki Min, Wooseok Choi, Chan Won Park
    Abstract:

    The pressure sensor is a key device in many mechatronic systems for automotive and industrial applications. We represent the piezoresitive pressure sensor based on the single crystal silicon strain gauges, which are Glass-fused to the stainless steel diaphragm at high temperature. The silicon bulkmicromachined strain gauges have the through holes and the closed structure, unlike the current competitive devices with open structure. This unique design concept reduces shifting or rotation of gauge position during Glass Frit Bonding and enables the automation of alignment and Bonding processes, which improves the sensor performance and yield and hence reduces sensor cost. The prototype was characterized using specific long term tests such as PPTCB (pulsed pressure, temperature cycling, with bias). The pressure sensors tested under pressure ranging from 0 to 50 bar at different temperature have a linear output with a typical sensitivity of about 16mV/V/bar and an offset drift of –6 mV to 2 mV. The fatigue life tests run at a rate of 3 Hz up to 2 million pressure cycles from 0 to 50 bar showed no failures when the pressure cycle test was stopped.

Yuelin Wang - One of the best experts on this subject based on the ideXlab platform.

  • A wide measurement pressure range CMOS-MEMS based integrated thermopile vacuum gauge with an XeF2 dry-etching process
    Sensors and Actuators A: Physical, 2013
    Co-Authors: Xiao Sun, Bin Xiong, Yuelin Wang
    Abstract:

    Abstract This paper reports a wide pressure measurement range CMOS-MEMS based integrated thermopile vacuum gauge with an XeF2 dry-etching process. By using XeF2 front-side dry-etching process, a small gap between the suspended heater and the substrate has been obtained, which can extend the upper pressure limit of the gauge. Meanwhile, a small size about 0.4 mm × 1.5 mm of the gauge structure has been obtained, and a good yield of 93% for elements in a wafer has been achieved. A cap mounted on the integrated thermopile vacuum gauge by wafer level Glass Frit Bonding enhances the gas thermal conduction between the heater and the cap, which increases the sensitivity of the gauge and enlarges the sensing pressure range of the gauge. Moreover, a cap mounted on the gauge provides a chamber to protect the floating integrated thermopile vacuum gauge structure and a good yield of better than 90% for the packaged integrated thermopile vacuum gauge has been achieved. The constant power of 4.5 mW is applied to the device, and experimental results show the integrated thermopile vacuum gauge has a good response to the gas pressure from 5 × 10−3 Pa to 105 Pa.

  • Wafer-Level Vacuum Packaging for MEMS Resonators Using Glass Frit Bonding
    Journal of Microelectromechanical Systems, 2012
    Co-Authors: Guoqiang Wu, Dehui Xu, Yuchen Wang, Bin Xiong, Yuelin Wang
    Abstract:

    A wafer-level vacuum package with silicon bumps and electrical feedthroughs on the cap wafer is developed for a microelectromechanical systems (MEMS) resonator device. A MEMS resonator wafer and a cap wafer are bonded together in a vacuum chamber using Glass Frit Bonding. The cap wafer not only provides a vacuum chamber to protect the movable resonator structure and improve the resonant performance but also realizes the redistribution of the electrical feedthroughs by using the silicon bumps. The silicon bumps provide vertical interconnections between the cap wafer and the resonator wafer, which realizes the Bonding pads “transferring” from the resonator wafer to the cap wafer. A gold-aluminum eutectic is used to ensure electrical contacts between the cap wafer and the device wafer. The device fabrication and Glass Frit hermetic Bonding process as well as the packaged MEMS resonator characterization are presented in this paper. Experimental results show that the wafer-level vacuum-packaged MEMS resonator results in over 100× higher quality factor (Q) than the resonator vibrating in atmosphere pressure, which confirms the transmission performance improvement due to vacuum packaging. Vacuum inside the package is measured indirectly by measuring the Q of the MEMS resonator inside the package. The experimental results indicate that vacuum about 1 mbar can be sealed in this approach.

  • Wafer level vacuum packaged resonator with in-situ Au-Al eutectic Re-Distribution layer
    SENSORS 2012 IEEE, 2012
    Co-Authors: Guoqiang Wu, Dehui Xu, Errong Jing, Bin Xiong, Yuelin Wang
    Abstract:

    In this paper, a wafer level vacuum packaged resonator with in-situ Au-Al eutectic Re-Distribution layer is demonstrated. A cap wafer with silicon bumps and electrical feedthroughs is bonded together with a MEMS resonator wafer using wafer level Glass Frit Bonding technology. The silicon bumps provide close contact for the aluminum layer on the cap wafer and the gold layer on the device wafer, on which a gold-aluminum (Au-Al) eutectic is formed. The in-situ Au-Al eutectic layer achieve electrical interconnections between the cap wafer and the device wafer, which realizes the redistribution of the electrical feedthroughs of the MEMS resonator on the cap wafer. The formation mechanism of the Au-Al eutectic is illustrated. The Au-Al eutectic is observed through the FD3/SEM and IR images and is analyzed using EDX. The measured dynamic performance of the packaged MEMS resonator is presented in this paper. Experimental results show that the wafer-level vacuum packaged MEMS resonator results in over 100× higher quality factor (Q) than the resonator vibrating in atmosphere pressure. The experimental results indicate that vacuum about 3 mbar can be sealed in this approach.

  • Redistribution of Electrical Interconnections for Three-Dimensional Wafer-Level Packaging With Silicon Bumps
    IEEE Electron Device Letters, 2012
    Co-Authors: Guoqiang Wu, Dehui Xu, Bin Xiong, Yuelin Wang
    Abstract:

    In this letter, an approach to the redistribution of electrical interconnections is investigated for potential application in 3-D wafer-level packaging. A cap wafer with silicon bumps and electrical feedthroughs is bonded together with a device wafer using wafer-level Glass-Frit Bonding technology. During the Bonding process, the mechanical bond is performed by Glass-Frit Bonding to form hermetic packaging. Simultaneously, the silicon bumps provide close contact for the electrical feedthroughs on the cap wafer and the metal pads on the device wafer, on which a gold-aluminum eutectic is formed to achieve electrical interconnections between the cap wafer and the device wafer. Moreover, the silicon bumps provide a way to control well the height of the Bonding materials. This process not only realizes a wafer-level hermetic sealing but also achieves the redistribution of electrical interconnections. Application of this approach for a high performance MEMS resonator is demonstrated, which illustrates the feasibility of this process.

Zongyang Zhang - One of the best experts on this subject based on the ideXlab platform.

  • silicon strain gages bonded on stainless steel using Glass Frit for strain sensor applications
    Measurement Science and Technology, 2014
    Co-Authors: Zongyang Zhang, Xingguo Cheng, Yi Leng, Gang Cao, Sheng Liu
    Abstract:

    In this paper, a steel pressure sensor using strain gages bonded on a 17–4 PH stainless steel (SS) diaphragm based on Glass Frit technology is proposed. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique. The inorganic Glass Frits are used as the Bonding material between the strain gages and the 17–4 PH SS diaphragm. Our results show that the output performances of sensors at a high temperature of 125 °C are almost equal those at room temperature, which indicates that the Glass Frit Bonding is a good method and may lead to a significant advance in the high temperature applicability of silicon strain gage sensors. Finally, the microstructure of the cured organic adhesive and the fired Glass Frit are compared. It may be concluded that the defects of the cured organic adhesive deteriorate the hysteresis and repeatability errors of the sensors.

  • a steel pressure sensor based on micro fused Glass Frit technology
    International Conference on Electronic Packaging Technology, 2012
    Co-Authors: Zongyang Zhang, Xingguo Cheng, Xulong Gui, Xiaojie Che, Sheng Liu
    Abstract:

    In this paper, we propose a pressure sensor using strain gages bonded on 17-4PH stainless steel (SS) diaphragm based on micro-fused Glass Frit technology. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique rather than conventional photolithography and etching techniques. The inorganic micro-fused Glass Frits are used as the Bonding material between the strain gages and the 17-4PH SS diaphragm. Compared to organic adhesives, the Glass Frits Bonding material can minimize the hysteresis error in the high temperature applications and improve the mechanical properties of semiconductor strain gage based pressure transducers. After wire bonds being made between the two half bridge strain gages and an interface printed circuit board (PCB), the output characteristics of sensors are evaluated. Results show that the sensors exhibit a stable output with 0.045% full-scale (FS) hysteresis error, and linearity and repeatability are less than 0.04% FS 0.12% FS at the room temperature. Furthermore, the output performance of sensors in the high temperature of 125 °C almost equals that of the room temperature, which indicates that the Glass Frit Bonding is a good method which would lead to a significant advance in the high temperature applicability of silicon strain gage transducers.