The Experts below are selected from a list of 72 Experts worldwide ranked by ideXlab platform
P.m. Lenahan - One of the best experts on this subject based on the ideXlab platform.
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Interfacial layer defects and instabilities in HfO2 MOS structures
2008 IEEE International Reliability Physics Symposium, 2008Co-Authors: J.t. Ryan, P.m. LenahanAbstract:Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon probably weakly coupled to a nearby Hafnium Atom.
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Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs
2007 IEEE International Integrated Reliability Workshop Final Report, 2007Co-Authors: J.t. Ryan, P.m. LenahanAbstract:Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby Hafnium Atom.
J.t. Ryan - One of the best experts on this subject based on the ideXlab platform.
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Interfacial layer defects and instabilities in HfO2 MOS structures
2008 IEEE International Reliability Physics Symposium, 2008Co-Authors: J.t. Ryan, P.m. LenahanAbstract:Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon probably weakly coupled to a nearby Hafnium Atom.
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Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs
2007 IEEE International Integrated Reliability Workshop Final Report, 2007Co-Authors: J.t. Ryan, P.m. LenahanAbstract:Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby Hafnium Atom.
S. I. Kurganskii - One of the best experts on this subject based on the ideXlab platform.
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Spatial Structure, Electron Energy Spectrum, and Growth of HfSi n − Clusters (n = 6–20)
Russian Journal of Inorganic Chemistry, 2018Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:The optimized spatial structure and calculated electronic spectra of anionic clusters HfSi n − (n = 6–20) are presented. The calculations have been performed by the density functional theory method. By comparing the calculated and available experimental data, the spatial structures of the clusters detected in the experiment have been determined. It has been established that the formation of endohedral structures begins with n = 12, when a stable structure of a prism encapsulating a Hafnium Atom is formed. Clusters with n = 12 and 16 have increased stability and are basic for the construction of clusters with a close number of silicon Atoms.
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Spatial Structure, Electron Energy Spectrum, and Growth of HfSi _ n ^− Clusters (n = 6–20)
Russian Journal of Inorganic Chemistry, 2018Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:The optimized spatial structure and calculated electronic spectra of anionic clusters HfSi _ n ^− ( n = 6–20) are presented. The calculations have been performed by the density functional theory method. By comparing the calculated and available experimental data, the spatial structures of the clusters detected in the experiment have been determined. It has been established that the formation of endohedral structures begins with n = 12, when a stable structure of a prism encapsulating a Hafnium Atom is formed. Clusters with n = 12 and 16 have increased stability and are basic for the construction of clusters with a close number of silicon Atoms.
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Spatial structure and electron energy spectrum of HfGe _ n ^– (n = 6–20) clusters
Inorganic Materials, 2015Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:This paper presents spatial structure optimization results and calculated electronic spectra for HfGe _ n ^– ( n = 6–20) anion clusters. Comparison of the calculation results and available experimental data makes it possible to identify the most likely spatial structures of clusters detected in experiments. Cage structures of the clusters, with an encapsulated Hafnium Atom, are stable for n ≥ 12. The clusters with n ≥ 12, 14, 15, and 18 are “magic” in the series of germanium–Hafnium anion clusters.
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Spatial structure and electron energy spectrum of HfGe n – (n = 6–20) clusters
Inorganic Materials, 2015Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:This paper presents spatial structure optimization results and calculated electronic spectra for HfGe n – (n = 6–20) anion clusters. Comparison of the calculation results and available experimental data makes it possible to identify the most likely spatial structures of clusters detected in experiments. Cage structures of the clusters, with an encapsulated Hafnium Atom, are stable for n ≥ 12. The clusters with n ≥ 12, 14, 15, and 18 are “magic” in the series of germanium–Hafnium anion clusters.
Yu M Smirnov - One of the best experts on this subject based on the ideXlab platform.
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excitation of quintet states of the Hafnium Atom by electron impact
Journal of Physics B, 1993Co-Authors: A N Kuchenev, Yu M SmirnovAbstract:Excitation of quintet states of the Hafnium Atom has been investigated by a method of extended crossing beams by recording the optical signal from the intersection region. About 110 effective excitation cross sections of Hf I spectral lines within the region 248 to 800 nm have been measured; optical excitation functions changing the electron energy from the excitation threshold value to 200 eV have been recorded. The measured excitation cross sections range from 3*10-19 to 9.6*10-17 cm2 (at an electron energy of 30 eV).
N. A. Borshch - One of the best experts on this subject based on the ideXlab platform.
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Spatial Structure, Electron Energy Spectrum, and Growth of HfSi n − Clusters (n = 6–20)
Russian Journal of Inorganic Chemistry, 2018Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:The optimized spatial structure and calculated electronic spectra of anionic clusters HfSi n − (n = 6–20) are presented. The calculations have been performed by the density functional theory method. By comparing the calculated and available experimental data, the spatial structures of the clusters detected in the experiment have been determined. It has been established that the formation of endohedral structures begins with n = 12, when a stable structure of a prism encapsulating a Hafnium Atom is formed. Clusters with n = 12 and 16 have increased stability and are basic for the construction of clusters with a close number of silicon Atoms.
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Spatial Structure, Electron Energy Spectrum, and Growth of HfSi _ n ^− Clusters (n = 6–20)
Russian Journal of Inorganic Chemistry, 2018Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:The optimized spatial structure and calculated electronic spectra of anionic clusters HfSi _ n ^− ( n = 6–20) are presented. The calculations have been performed by the density functional theory method. By comparing the calculated and available experimental data, the spatial structures of the clusters detected in the experiment have been determined. It has been established that the formation of endohedral structures begins with n = 12, when a stable structure of a prism encapsulating a Hafnium Atom is formed. Clusters with n = 12 and 16 have increased stability and are basic for the construction of clusters with a close number of silicon Atoms.
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Spatial structure and electron energy spectrum of HfGe _ n ^– (n = 6–20) clusters
Inorganic Materials, 2015Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:This paper presents spatial structure optimization results and calculated electronic spectra for HfGe _ n ^– ( n = 6–20) anion clusters. Comparison of the calculation results and available experimental data makes it possible to identify the most likely spatial structures of clusters detected in experiments. Cage structures of the clusters, with an encapsulated Hafnium Atom, are stable for n ≥ 12. The clusters with n ≥ 12, 14, 15, and 18 are “magic” in the series of germanium–Hafnium anion clusters.
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Spatial structure and electron energy spectrum of HfGe n – (n = 6–20) clusters
Inorganic Materials, 2015Co-Authors: N. A. Borshch, S. I. KurganskiiAbstract:This paper presents spatial structure optimization results and calculated electronic spectra for HfGe n – (n = 6–20) anion clusters. Comparison of the calculation results and available experimental data makes it possible to identify the most likely spatial structures of clusters detected in experiments. Cage structures of the clusters, with an encapsulated Hafnium Atom, are stable for n ≥ 12. The clusters with n ≥ 12, 14, 15, and 18 are “magic” in the series of germanium–Hafnium anion clusters.
