The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform
K C Saraswat - One of the best experts on this subject based on the ideXlab platform.
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specific contact resistivity reduction through ar plasma treated tio 2 x Interfacial Layer to metal ge contact
IEEE Electron Device Letters, 2014Co-Authors: Gwang Sik Kim, Jeongkyu Kim, Seung Hwan Kim, Changhwan Shin, Jinhong Park, K C SaraswatAbstract:We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2− x heavily doped Interfacial Layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of \(3.16 \times {10}~^{\mathrm {-3}} \Omega \cdot {\rm cm}^{2}\) on moderately doped n-type Ge substrate \((6\times 10^{16}{\rm cm}^{\mathrm {-3}})\) was achieved, exhibiting \(\times 584\) reduction from Ti/Ge structure, and \(\times 11\) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 Interfacial Layer at low temperature using Ar plasma was presented to lower \(S/D\) contact resistance in Ge n-MOSFET.
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analytical study of Interfacial Layer doping effect on contact resistivity in metal Interfacial Layer ge structure
IEEE Electron Device Letters, 2014Co-Authors: Jeongkyu Kim, Gwang Sik Kim, Changhwan Shin, Jinhong Park, K C SaraswatAbstract:We present a new model to demonstrate the effect of heavily doped Interfacial Layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-IL-semiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 10 20 cm -3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.
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reduction in specific contact resistivity to hbox n ge using hbox tio _ 2 Interfacial Layer
IEEE Electron Device Letters, 2012Co-Authors: J Jason Y Lin, Arunanshu M Roy, K C SaraswatAbstract:We report a metal-insulator-semiconductor (MIS) contact using a TiO2 Interfacial Layer on highly doped n+ Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height. A specific contact resistivity of 1.3 × 10-6 Ω·cm2 was achieved, which represents a 70× reduction from conventional contacts. For the first time, Interfacial Layer conductivity is experimentally identified as an important consideration for high-performance MIS contacts. New insights on the mechanism responsible for contact resistance reduction are presented.
Akira Toriumi - One of the best experts on this subject based on the ideXlab platform.
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Study on Zr-silicate Interfacial Layer of ZrO2 metal-insulator-semiconductor structure
Applied Physics Letters, 2002Co-Authors: Takeshi Yamaguchi, Hideki Satake, Noburu Fukushima, Akira ToriumiAbstract:We have investigated the physical and dielectric properties of the Zr-silicate Interfacial Layer of ZrO2 metal-insulator-semiconductor (MIS) structure fabricated by pulsed-laser ablation deposition. It was found that an ultrathin Zr-silicate Interfacial Layer is formed on a Si substrate as a result of the reaction between ZrO2 and Si. We showed that MIS capacitors consisting solely of the ultrathin Zr-silicate Interfacial Layer could be fabricated by selective etching of the ZrO2 Layer. The Zr-silicate Interfacial Layer showed a small equivalent oxide thickness of 0.8 nm, a dielectric constant of 8–9, and low leakage less than 1 A/cm2 at Vg of −1 V.
Gwang Sik Kim - One of the best experts on this subject based on the ideXlab platform.
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specific contact resistivity reduction through ar plasma treated tio 2 x Interfacial Layer to metal ge contact
IEEE Electron Device Letters, 2014Co-Authors: Gwang Sik Kim, Jeongkyu Kim, Seung Hwan Kim, Changhwan Shin, Jinhong Park, K C SaraswatAbstract:We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2− x heavily doped Interfacial Layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of \(3.16 \times {10}~^{\mathrm {-3}} \Omega \cdot {\rm cm}^{2}\) on moderately doped n-type Ge substrate \((6\times 10^{16}{\rm cm}^{\mathrm {-3}})\) was achieved, exhibiting \(\times 584\) reduction from Ti/Ge structure, and \(\times 11\) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 Interfacial Layer at low temperature using Ar plasma was presented to lower \(S/D\) contact resistance in Ge n-MOSFET.
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analytical study of Interfacial Layer doping effect on contact resistivity in metal Interfacial Layer ge structure
IEEE Electron Device Letters, 2014Co-Authors: Jeongkyu Kim, Gwang Sik Kim, Changhwan Shin, Jinhong Park, K C SaraswatAbstract:We present a new model to demonstrate the effect of heavily doped Interfacial Layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-IL-semiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 10 20 cm -3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.
Jeongkyu Kim - One of the best experts on this subject based on the ideXlab platform.
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specific contact resistivity reduction through ar plasma treated tio 2 x Interfacial Layer to metal ge contact
IEEE Electron Device Letters, 2014Co-Authors: Gwang Sik Kim, Jeongkyu Kim, Seung Hwan Kim, Changhwan Shin, Jinhong Park, K C SaraswatAbstract:We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2− x heavily doped Interfacial Layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of \(3.16 \times {10}~^{\mathrm {-3}} \Omega \cdot {\rm cm}^{2}\) on moderately doped n-type Ge substrate \((6\times 10^{16}{\rm cm}^{\mathrm {-3}})\) was achieved, exhibiting \(\times 584\) reduction from Ti/Ge structure, and \(\times 11\) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 Interfacial Layer at low temperature using Ar plasma was presented to lower \(S/D\) contact resistance in Ge n-MOSFET.
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analytical study of Interfacial Layer doping effect on contact resistivity in metal Interfacial Layer ge structure
IEEE Electron Device Letters, 2014Co-Authors: Jeongkyu Kim, Gwang Sik Kim, Changhwan Shin, Jinhong Park, K C SaraswatAbstract:We present a new model to demonstrate the effect of heavily doped Interfacial Layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-IL-semiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 10 20 cm -3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.
Saurabh Lodha - One of the best experts on this subject based on the ideXlab platform.
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contact resistivity reduction through Interfacial Layer doping in metal Interfacial Layer semiconductor contacts
Journal of Applied Physics, 2013Co-Authors: Shashank Gupta, Prashanth Paramahans Manik, Ravi Kesh Mishra, Aneesh Nainani, Mathew Abraham, Saurabh LodhaAbstract:Metal-induced-gap-states model for Fermi-level pinning in metal-semiconductor contacts has been extended to metal-Interfacial Layer (IL)-semiconductor (MIS) contacts using a physics-based approach. Contact resistivity simulations evaluating various ILs on n-Ge indicate the possibility of forming low resistance contacts using TiO2, ZnO, and Sn-doped In2O3 (ITO) Layers. Doping of the IL is proposed as an additional knob for lowering MIS contact resistance. This is demonstrated through simulations and experimentally verified with circular-transfer length method and diode measurements on Ti/n+-ZnO/n-Ge and Ti/ITO/n-Ge MIS contacts.
