The Experts below are selected from a list of 142464 Experts worldwide ranked by ideXlab platform
Ali Shakouri - One of the best experts on this subject based on the ideXlab platform.
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thermodynamic studies of β ga2o3 nanomembrane field Effect transistors on a sapphire substrate
2017Co-Authors: Hong Zhou, Kerry Maize, Jinhyun Noh, Ali ShakouriAbstract:The self-Heating Effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-Heating Effect and surface temperature increase phenomenon are observed on novel top-gate β-Ga2O3 on insulator field-Effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature of β-Ga2O3 on the insulator field-Effect transistor can be reduced by a factor of 3 and thereby the self-Heating Effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO2/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that o...
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β ga2o3 on insulator field Effect transistors with drain currents exceeding 1 5 a mm and their self Heating Effect
2017Co-Authors: Hong Zhou, Kerry Maize, Gang Qiu, Ali ShakouriAbstract:We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-Effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-Effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-Heating Effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-Effect transistor a promising candidate for future power electronics applications.
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b eta ga2o3 on insulator field Effect transistors with drain currents exceeding 1 5 a mm and their self Heating Effect
2017Co-Authors: Hong Zhou, Kerry Maize, Gang Qiu, Ali ShakouriAbstract:We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-Effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on insulator field-Effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-Heating Effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the b-Ga2O3 on insulator field-Effect transistor a promising candidate for future power electronics applications.
Davood Domiri Ganji - One of the best experts on this subject based on the ideXlab platform.
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Numerical study on magnetohydrodynic CNTs-water nanofluids as a micropolar dusty fluid influenced by non-linear thermal radiation and joule Heating Effect
2018Co-Authors: S.s. Ghadikolaei, Kh. Hosseinzadeh, Davood Domiri GanjiAbstract:Abstract Numerical study on magnetohydrodynic (MHD) flow and heat transfer of incompressible CNTs-water nanoparticles (single wall carbon and tube (SWCNT) and multiwall cabin nanotube (MWCNT)) as a non-Newtonian micropolar dusty fluid influenced by non-linear thermal radiation and joule Heating Effect over stretching plate are investigated in this paper. The governing equations have been solved by numerical method. Flow and heat transfer for two cases of prescribed heat flux (PHF) and prescribed surface temperature (PST) are analyzed, As a important result have been mentioned to the reduction of velocity profile due to the Lorentz force by increasing magnetic field parameter, the temperature profile increases by increasing radiation parameter, and MWCNT in comparison to the SWCNT has a greater Effect on velocity profile also SWCNT in compared to the MWCNT has a greater Effect on temperature profile and heat transfer.
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Analysis of unsteady MHD Eyring-Powell squeezing flow in stretching channel with considering thermal radiation and Joule Heating Effect using AGM
2017Co-Authors: S.s. Ghadikolaei, Kh. Hosseinzadeh, Davood Domiri GanjiAbstract:Abstract In this paper, has been investigated the heat and mass transfer in an unsteady two- dimensional squeezing flow of magnetohydromagnetic (MHD) radiative non-Newtonian Eyring-Powell fluid between two parallel infinite plates in the presence of heat generation/absorption, thermal radiation and Joule Heating Effect. The partial differential equations governing the flow problem converted to ordinary differential equations by using suitable similarity transformation. After that the Akbari- Ganji , s Method (AGM) has been used to solve differential equations governing this problem and during comparing happened between AGM and Runge-Kutta Fehlbrg method (RKF) it's observing AGM is a method with high accuracy for solving differential equations. The main goal of this paper is to investigate the Effects of changes in the values of several parameters on the velocity and temperature and also on the local skin friction coefficient, local Nusselt and Sherwood numbers. The most important results of analyzes are Lorentz force generated by magnetic field parameter in the fluid flow field which reduces velocity and decrease in fluid temperature by increasing thermal radiation parameter.
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Nanofluid hydrothermal behavior in existence of Lorentz forces considering Joule Heating Effect
2016Co-Authors: Mohsen Sheikholeslami, Davood Domiri GanjiAbstract:Abstract Magnetohydrodynamic nanofluid flow between two parallel vertical permeable sheets is investigated. Buongiorno model is selected for nanofluid simulation. Joule Heating and viscous dissipation impacts are taken into account. Differential Transform Method (DTM) is utilized to solve the final formulae which are obtained via similarity transformation. Roles of Prandtl and Hartmann numbers, Eckert number, suction parameter, Buoyancy ratio, Schmidt number, thermophoretic and Brownian motion parameters are presented. Results illustrated that shear stress enhances with rise of Eckert number but it reduces with rise of Lorentz forces. Temperature gradient on left sheet augments with enhances of Lorentz forces but it decreases with rise of Brownian motion.
Hong Zhou - One of the best experts on this subject based on the ideXlab platform.
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thermodynamic studies of β ga2o3 nanomembrane field Effect transistors on a sapphire substrate
2017Co-Authors: Hong Zhou, Kerry Maize, Jinhyun Noh, Ali ShakouriAbstract:The self-Heating Effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-Heating Effect and surface temperature increase phenomenon are observed on novel top-gate β-Ga2O3 on insulator field-Effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature of β-Ga2O3 on the insulator field-Effect transistor can be reduced by a factor of 3 and thereby the self-Heating Effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO2/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that o...
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β ga2o3 on insulator field Effect transistors with drain currents exceeding 1 5 a mm and their self Heating Effect
2017Co-Authors: Hong Zhou, Kerry Maize, Gang Qiu, Ali ShakouriAbstract:We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-Effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-Effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-Heating Effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-Effect transistor a promising candidate for future power electronics applications.
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b eta ga2o3 on insulator field Effect transistors with drain currents exceeding 1 5 a mm and their self Heating Effect
2017Co-Authors: Hong Zhou, Kerry Maize, Gang Qiu, Ali ShakouriAbstract:We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-Effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on insulator field-Effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-Heating Effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the b-Ga2O3 on insulator field-Effect transistor a promising candidate for future power electronics applications.
Anton Hamler - One of the best experts on this subject based on the ideXlab platform.
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magnetic fluids Heating power exposed to a high frequency rotating magnetic field
2018Co-Authors: Milos Bekovic, Mislav Trbusic, M Trlep, M Jesenik, Anton HamlerAbstract:Magnetic fluids are superparamagnetic materials that have recently been the subject of extensive research because of their unique properties. Among them is the Heating Effect when exposed to an alternating magnetic field, wherein the objective is to use this property in medicine as an alternative method for the treatment of tumors in the body. The Heating Effect characterization for the alternating magnetic field (AMF) has been studied widely, whilst for the rotational magnetic field (RMF), no systematic study has been done yet. In this article, we present the characterization of the Heating power of magnetic fluids in a high-frequency rotational magnetic field. The results show similar behavior of Heating power or specific absorption rate characteristics as in AMF.
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determination of the Heating Effect of magnetic fluid in alternating magnetic field
2010Co-Authors: Milos Bekovic, Anton HamlerAbstract:In this paper, we have investigated the Heating power of magnetic fluid, when exposed to a high-frequency magnetic field. Commercially available sample of magnetic fluid has been used and some basic investigation revealed maghemite ?-Fe2O3 particles with 10.9-nm mean diameter and 10.57% volume concentration. We present an improved experimental system, capable of generating homogeneous magnetic field of amplitudes up to 4 kA/m and frequencies from 10 kHz to 1 MHz. In this paper, none of the Heating generation mechanisms (NE?el or Brownian relaxation or eddy current losses) have been determined solemnly, therefore, the outcome of their activity has been examined by two methods. In case of calorimetric measurements method key parameter is temperature rise while in case of magnetic measurement method key parameters are time-dependent magnetic field strength H and appurtenant magnetic flux density B. Calorimetric measurements are performed and used to determine specific absorption rate curve. Alternatively, this curve has been obtained with the measurement of B(t) and H(t), when a sample is exposed to the same magnetic conditions. Integration of the hysteresis loops has resulted in loss power of the fluid. Proposed magnetic measurement methods proved to be a decent alternative in the process of determining losses.
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determination of the Heating Effect of magnetic fluid in alternating magnetic field
2010Co-Authors: Milos Bekovic, Anton HamlerAbstract:In this paper, we have investigated the Heating power of magnetic fluid, when exposed to a high-frequency magnetic field. Commercially available sample of magnetic fluid has been used and some basic investigation revealed maghemite ?-Fe2O3 particles with 10.9-nm mean diameter and 10.57% volume concentration. We present an improved experimental system, capable of generating homogeneous magnetic field of amplitudes up to 4 kA/m and frequencies from 10 kHz to 1 MHz. In this paper, none of the Heating generation mechanisms (NE?el or Brownian relaxation or eddy current losses) have been determined solemnly, therefore, the outcome of their activity has been examined by two methods. In case of calorimetric measurements method key parameter is temperature rise while in case of magnetic measurement method key parameters are time-dependent magnetic field strength H and appurtenant magnetic flux density B. Calorimetric measurements are performed and used to determine specific absorption rate curve. Alternatively, this curve has been obtained with the measurement of B(t) and H(t), when a sample is exposed to the same magnetic conditions. Integration of the hysteresis loops has resulted in loss power of the fluid. Proposed magnetic measurement methods proved to be a decent alternative in the process of determining losses.
Kerry Maize - One of the best experts on this subject based on the ideXlab platform.
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thermodynamic studies of β ga2o3 nanomembrane field Effect transistors on a sapphire substrate
2017Co-Authors: Hong Zhou, Kerry Maize, Jinhyun Noh, Ali ShakouriAbstract:The self-Heating Effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-Heating Effect and surface temperature increase phenomenon are observed on novel top-gate β-Ga2O3 on insulator field-Effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature of β-Ga2O3 on the insulator field-Effect transistor can be reduced by a factor of 3 and thereby the self-Heating Effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO2/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that o...
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β ga2o3 on insulator field Effect transistors with drain currents exceeding 1 5 a mm and their self Heating Effect
2017Co-Authors: Hong Zhou, Kerry Maize, Gang Qiu, Ali ShakouriAbstract:We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-Effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-Effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-Heating Effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-Effect transistor a promising candidate for future power electronics applications.
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b eta ga2o3 on insulator field Effect transistors with drain currents exceeding 1 5 a mm and their self Heating Effect
2017Co-Authors: Hong Zhou, Kerry Maize, Gang Qiu, Ali ShakouriAbstract:We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-Effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on insulator field-Effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-Heating Effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the b-Ga2O3 on insulator field-Effect transistor a promising candidate for future power electronics applications.