The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform

Kazumi Wada - One of the best experts on this subject based on the ideXlab platform.

  • Coalescence induced dislocation reduction in selectively grown lattice-mismatched Heteroepitaxy: Theoretical prediction and experimental verification
    Journal of Applied Physics, 2018
    Co-Authors: Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada
    Abstract:

    A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.

  • coalescence induced dislocation reduction in selectively grown lattice mismatched Heteroepitaxy theoretical prediction and experimental verification
    Journal of Applied Physics, 2018
    Co-Authors: Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada
    Abstract:

    A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.

Yasuhiko Ishikawa - One of the best experts on this subject based on the ideXlab platform.

  • Coalescence induced dislocation reduction in selectively grown lattice-mismatched Heteroepitaxy: Theoretical prediction and experimental verification
    Journal of Applied Physics, 2018
    Co-Authors: Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada
    Abstract:

    A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.

  • coalescence induced dislocation reduction in selectively grown lattice mismatched Heteroepitaxy theoretical prediction and experimental verification
    Journal of Applied Physics, 2018
    Co-Authors: Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada
    Abstract:

    A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.

Motoki Yako - One of the best experts on this subject based on the ideXlab platform.

  • Coalescence induced dislocation reduction in selectively grown lattice-mismatched Heteroepitaxy: Theoretical prediction and experimental verification
    Journal of Applied Physics, 2018
    Co-Authors: Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada
    Abstract:

    A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.

  • coalescence induced dislocation reduction in selectively grown lattice mismatched Heteroepitaxy theoretical prediction and experimental verification
    Journal of Applied Physics, 2018
    Co-Authors: Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada
    Abstract:

    A method for reduction of threading dislocation density (TDD) in lattice-mismatched Heteroepitaxy is proposed, and the reduction is experimentally verified for Ge on Si. Flat-top epitaxial layers are formed through coalescences of non-planar selectively grown epitaxial layers, and enable the TDD reduction in terms of image force. Numerical calculations and experiments for Ge on Si verify the TDD reduction by this method. The method should be applicable to not only Ge on Si but also other lattice-mismatched Heteroepitaxy such as III-V on Si.

Yugandhar Bitla - One of the best experts on this subject based on the ideXlab platform.

  • van der Waals Heteroepitaxy on muscovite
    Materials Chemistry and Physics, 2019
    Co-Authors: Yugandhar Bitla
    Abstract:

    Abstract As current electronics makes a transition from bulky and rigid templates to lightweight and flexible ones, the emerging field of soft technology is set to revolutionize our daily life. Currently, polymer based templates dominate this field due to their excellent mechanical characteristics and low cost, but limited thermal budget and stabilities are the major technological bottlenecks resulting in poor performance and short duration of lifetime. Recently, the technology based on van der Waals Heteroepitaxy on muscovite is considered as a promising solution to overcome these barriers at once. In this paper, the characteristics of muscovite and the mechanism of van der Waals Heteroepitaxy will be introduced, after that, a variety of materials on muscovite via van der Waals Heteroepitaxy and the efforts on practical applications are reported. With the outlook of material science and help of advanced measurements, the evidence of Heteroepitaxy of muscovite and overlayers has been deeply analyzed. Moreover, various measurements of properties was carried under bending conditions to demonstrate the mechanical stability and reliability. Through this review, we pave the path to develop more material systems on muscovite to make MICAtronics completely.

  • oxide Heteroepitaxy for flexible optoelectronics
    ACS Applied Materials & Interfaces, 2016
    Co-Authors: Yugandhar Bitla, Chun-wei Huang, Ching Chen, Hsienchang Lee, Chun Hao, Le Van Qui, Li Chang, Powen Chiu, Ying-hao Chu
    Abstract:

    The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite’s superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art trans...

Sebastian Lourdudoss - One of the best experts on this subject based on the ideXlab platform.

  • Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy
    Journal of Crystal Growth, 2020
    Co-Authors: Axel Strömberg, Sebastian Lourdudoss, Giriprasanth Omanakuttan, Yingjun Liu, Yan-ting Sun
    Abstract:

    Abstract Direct Heteroepitaxy of GaAsP and GaP on GaAs and on Si by low-pressure hydride vapor phase epitaxy (HVPE) is investigated as prior studies for photovoltaics and non-linear optics applications. When growing GaAsP on GaAs, it is found that the ambient gas during substrate pre-heating influences the ternary composition as well as the crystalline quality of the subsequent growth. GaAs0.72P0.28 with bandgap energy of 1.76 eV has been achieved, which would be suitable for a top cell in Si tandem solar cell structures. Growth of GaP was investigated on planar GaAs as a prior study for realizing orientation patterned (OP) GaP on OP-GaAs. Threading dislocations caused by the 3.6% lattice mismatch between GaP and GaAs are suppressed by adjusting the GaCl flow, achieving a low full width at half maximum of 146 arcsec for the X-ray diffraction omega scan. Direct Heteroepitaxy of GaAsP on Si aiming for achieving a GaAsP/Si dual junction solar cell is demonstrated. The inherent problem of initiating nucleation during the direct Heteroepitaxy of III-V on Si by HVPE is overcome by utilizing the vapor mixing approach to grow a low-temperature GaP buffer layer on Si, followed by a GaAsP layer grown by conventional HVPE.

  • Heteroepitaxy and selective area Heteroepitaxy for silicon photonics
    Current Opinion in Solid State and Materials Science, 2012
    Co-Authors: Sebastian Lourdudoss
    Abstract:

    This article reviews the major achievements in recent years on Heteroepitaxy and selective area Heteroepitaxy that are relevant to silicon photonics. Material aspects are given due importance without trying to cover all kinds of devices. Under Heteroepitaxy several systems based on GaAs, InP and GaSb and their related materials and dilute III-nitrides all on Si substrates are covered and assessed. Quantum dot and quantum well lasers are taken as device examples. The potential of the emerging SnGeSi/Si system is highlighted. Under selective area Heteroepitaxy, growth of InP from SiO2 trenches in Si and epitaxial lateral overgrowth of InP on silicon are exemplified as the potential routes for monolithic integration on silicon. The expected trends and anticipated advances are indicated.

  • Heteroepitaxy and Selective Epitaxy for Discrete and Integrated Devices
    2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006
    Co-Authors: Sebastian Lourdudoss, F. Olsson, Carlos Angulo Barrios, T. Hakkarainen, Audrey Berrier, Srinivasan Anand, A. Aubert, Jesper Berggren, R.g. Broeke, Jing Cao
    Abstract:

    We present first results on Heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for optical code division multiplex access (OCDMA) networking applications.