The Experts below are selected from a list of 62856 Experts worldwide ranked by ideXlab platform
John E Bowers - One of the best experts on this subject based on the ideXlab platform.
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narrow linewidth iii v si si3n4 laser using multilayer Heterogeneous Integration
Optica, 2020Co-Authors: Chao Xiang, Jonathan D Peters, Warren Jin, Joel Guo, M J Kennedy, Jennifer Selvidge, Paul A Morton, John E BowersAbstract:We demonstrate a novel ${\rm III} {\text -} {\rm V}/{\rm Si}/{{\rm Si}_3}{{\rm N}_4}$III-V/Si/Si3N4 structure to enable efficient electrically pumped lasing in a fully integrated ${{\rm Si}_3}{{\rm N}_4}$Si3N4 based external cavity for the first time. The laser shows superior temperature stability and low phase noise.
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towards Heterogeneous Integration of optical isolators and circulators with lasers on silicon invited
Optical Materials Express, 2018Co-Authors: Duanni Huang, Paolo Pintus, John E BowersAbstract:Optical isolators and circulators are extremely valuable components to have in photonic integrated circuits, but their Integration with lasers poses significant design and fabrication challenges. These challenges largely stem from the incompatibility of magneto-optic material with the silicon or III-V platforms commonly used today for photonic Integration. Heterogeneous Integration using wafer bonding can overcome many of these challenges, and provides a promising path towards integrating isolators with lasers on the same silicon chip. An optical isolator operating for TE mode with 25 dB of isolation, 6.5 dB of insertion loss, and tunability over 40nm is demonstrated and a path towards integrating this isolator with the Heterogeneous silicon/III-V laser is described.
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photonic integrated circuits using Heterogeneous Integration on silicon
Proceedings of the IEEE, 2018Co-Authors: Tin Komljenovic, Duanni Huang, Paolo Pintus, Minh A Tran, Michael L Davenport, John E BowersAbstract:Heterogeneous silicon photonics using wafer bonding is reaching maturity with commercial products for the data center market being shipped in volume. Here we give an overview of recent research in the area showing record device performance by using the best of both worlds: III–V for light generation and Si for guiding the light. Utilizing the flexibility of the Heterogeneous silicon platform, narrow-linewidth widely tunable lasers as well as fully integrated mode locked lasers with record pulse powers and pulse duration were demonstrated. The ability to perform multiple die bonding with optimized epitaxially grown layer stacks was used to realize high-performance photonic integrated circuits both for communications and sensing. In addition to III–V materials, nonreciprocal materials such as, for example, Ce:YIG can be bonded, providing additional functionality such as on-chip isolators and reconfigurable on-chip circulators. On-chip isolation will become necessary with the increase in complexity of photonic integrated chips as photonic components such as lasers are sensitive to feedback effects.
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Heterogeneous Integration for mid infrared silicon photonics
IEEE Journal of Selected Topics in Quantum Electronics, 2017Co-Authors: Alexander Spott, Eric J Stanton, Nicolas Volet, Jonathan D Peters, J R Meyer, John E BowersAbstract:Heterogeneous Integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range of passive and active elements including lasers and detectors. Numerous advancements in recent years have shown that Heterogeneous Si platforms can be extended beyond near-infrared telecommunication wavelengths to the mid-infrared (MIR) (2–20 μm) regime. These wavelengths hold potential for an extensive range of sensing applications and the necessary components for fully integrated Heterogeneous MIR Si photonic technologies have now been demonstrated. However, due to the broad wavelength range and the diverse assortment of MIR technologies, the optimal platform for each specific application is unclear. Here, we overview Si photonic waveguide platforms and lasers at the MIR, including quantum cascade lasers on Si. We also discuss progress toward building an integrated multispectral source, which can be constructed by wavelength beam combining the outputs from multiple lasers with arrayed waveguide gratings and duplexing adiabatic couplers.
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a comparison of four approaches to photonic Integration
Optical Fiber Communication Conference, 2017Co-Authors: John E Bowers, Alan Y LiuAbstract:We present a techno-economic analysis of four different platforms for photonic Integration: pure III-V/InP, pure SOI (monolithic silicon photonics), III-V Heterogeneously integrated on SOI (Heterogeneous Integration), and III-V epitaxially grown on silicon.
Gunther Roelkens - One of the best experts on this subject based on the ideXlab platform.
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Heterogeneous Integration of ky wo4 2 on glass a bonding study
OSA Continuum, 2019Co-Authors: Carlijn I Van Emmerik, Gunther Roelkens, Muhammad Muneeb, Raimond Frentrop, Meindert Dijkstra, Frans B Segerink, Roy Kooijman, Elise Ghibaudo, Jeanemmanuel Broquin, Sonia M GarciablancoAbstract:Rare-earth ion doped potassium yttrium double tungstate, RE:KY(WO4)2, is a promising candidate for small, power-efficient, on-chip lasers and amplifiers. There are two major bottlenecks that complicate the realization of such devices. Firstly, the anisotropic thermal expansion coefficient of KY(WO4)2 makes it challenging to integrate the crystal on glass substrates. Secondly, the crystal layer has to be, for example, <1 µm to obtain single mode, high refractive index contrast waveguides operating at 1550 nm. In this work, different adhesives and bonding techniques in combination with several types of glass substrates are investigated. An optimal bonding process will enable further processing towards the manufacturing of integrated active optical KY(WO4)2 devices.
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micro transfer printing of al2o3 capped short wave infrared pbs quantum dot photoconductors
ACS Applied Nano Materials, 2019Co-Authors: Nayyera Mahmoud, Willem Walravens, Jakob Kuhs, Christophe Detavernier, Zeger Hens, Gunther RoelkensAbstract:Quantum dots (QDs) have attracted considerable attention in the development of various optoelectronic applications. The scalable Heterogeneous Integration of high quality, yet stable QD films is re...
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Integration of etched facet electrically pumped c band fabry perot lasers on a silicon photonic integrated circuit by transfer printing
Optics Express, 2018Co-Authors: Joan Juvert, Gunther Roelkens, Tommaso Cassese, Sarah Uvin, Andreas De Groote, Brad Snyder, Lieve Bogaerts, Geraldine Jamieson, Joris Van Campenhout, Dries Van ThourhoutAbstract:We report on the Heterogeneous Integration of electrically pumped InP Fabry-Perot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the Heterogeneous Integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Perot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.
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2 μm wavelength range inp based type ii quantum well photodiodes Heterogeneously integrated on silicon photonic integrated circuits
Optics Express, 2015Co-Authors: Ruijun Wang, Roel Baets, Muhammad Muneeb, Stephan Sprengel, Gerhard Boehm, Markuschristian Amann, Gunther RoelkensAbstract:The Heterogeneous Integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser Integration on the same platform.
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laser sources on a Heterogeneous iii v silicon platform
IEEE Photonics Conference, 2011Co-Authors: Gunther Roelkens, Roel Baets, Shahram Keyvaninia, Geert Morthier, Dries Van Thourhout, S Stankovic, Pauline Mechet, Rajesh Kumar, M LamponiAbstract:The Heterogeneous Integration of III-V semiconductor lasers on a silicon waveguide platform using DVS-BCB adhesive bonding is reviewed. Both mW-level lasers and ultra-compact laser sources are discussed.
Tomas Palacios - One of the best experts on this subject based on the ideXlab platform.
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gan devices on a 200 mm si platform targeting Heterogeneous Integration
IEEE Electron Device Letters, 2017Co-Authors: Can Bayram, Daniel Piedra, Edmund J Sprogis, Hariklia Deligianni, Balakrishnan Krishnan, George Papasouliotis, Ajit Paranjpe, Eyal Aklimi, Kenneth L Shepard, Tomas PalaciosAbstract:GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN epitaxial growth adjacent to Si (100). The current collapse in GaN HEMTs of $ patterns is 2%–6%, which is remarkably lower than the devices on blanket materials. We believe that stress relaxation resulting from substrate patterning contributes to the reduction of current collapse. By creating small GaN patterns on a larger diameter Si wafer, co-Integration of GaN with Si technology may be possible.
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wafer level Heterogeneous Integration of gan hemts and si 100 mosfets
IEEE Electron Device Letters, 2012Co-Authors: Tomas PalaciosAbstract:This letter demonstrates a new technology for the Heterogeneous Integration of GaN and Si devices, which is scalable at least up to 4-in wafers and compatible with conventional Si fabrication. The key step in the proposed technology is the fabrication of a Si (100)-GaN-Si hybrid wafer by bonding a silicon (100) on insulator (SOI) wafer to the nitride surface of an AlGaN/GaN on Si (111) wafer. A thin layer of silicon oxide is used to enhance the bonding between the SOI and the AlGaN/GaN wafers. Using this technology, Si pMOSFETs and GaN high-electron-mobility transistors have been fabricated on a 4-in hybrid wafer. Due to the high-temperature stability of GaN as well as the high-quality semiconductor material resulting from the transfer method, these devices exhibit excellent performance. A hybrid power amplifier has been fabricated as a circuit demonstrator, which shows the potential to integrate GaN and Si devices on the same chip to enable new performance in high-efficiency power amplifiers, mixed signal circuits, and digital electronics.
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seamless on wafer Integration of gan hemts and si 100 mosfets
Device Research Conference, 2009Co-Authors: Jin Wook Chung, Jongho Lee, E L Piner, Tomas PalaciosAbstract:The Integration of III–V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost Heterogeneous Integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this paper, we demonstrate the first on-wafer Integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.
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gan and digital electronics a way out of moore s law
Physica Status Solidi (c), 2009Co-Authors: Tomas Palacios, Omair I Saadat, Jin Wook Chung, Frédéric A. MiévilleAbstract:After forty years following Moore's law, Si digital electronics is reaching its limits, both in performance and in economic viability. In this paper we describe how nitride semiconductors can be combined with Si electronics to allow electronics to move beyond Moore's law and to enable new functionality. Three different research areas will be discussed: high performance digital circuits, high temperature electronics and Heterogeneous Integration of nitride and Si electronics. Diagram of the envisioned on-wafer Integration of Si and nitride electronics and optoelectronics.
Dries Van Thourhout - One of the best experts on this subject based on the ideXlab platform.
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Integration of etched facet electrically pumped c band fabry perot lasers on a silicon photonic integrated circuit by transfer printing
Optics Express, 2018Co-Authors: Joan Juvert, Gunther Roelkens, Tommaso Cassese, Sarah Uvin, Andreas De Groote, Brad Snyder, Lieve Bogaerts, Geraldine Jamieson, Joris Van Campenhout, Dries Van ThourhoutAbstract:We report on the Heterogeneous Integration of electrically pumped InP Fabry-Perot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the Heterogeneous Integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Perot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.
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realization of a compact optical interconnect on silicon by Heterogeneous Integration of iii v
IEEE Photonics Technology Letters, 2013Co-Authors: Thijs Spuesens, Philippe Regreny, Johan Bauwelinck, Dries Van ThourhoutAbstract:We present a compact optical interconnect on a silicon-on-insulator platform consisting of a directly modulated microdisk laser and detector connected via a silicon waveguide. A single III-V epitaxial structure that contains layers for both the laser and detector ensures that dense Integration becomes possible. All fabrication steps for the laser and detector, except for the detector mesa, are carried out simultaneously. The microdisk laser has a threshold current of 0.45 mA and a slope efficiency of 57 μW/mA. The responsivity of the detectors is 0.69 A/W. The full optical link has a static efficiency of 3% and a bandwidth of 7.6 GHz. A large signal modulation is applied and a 10 Gb/s bit pattern could be resolved.
Frank Niklaus - One of the best experts on this subject based on the ideXlab platform.
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wafer level Heterogeneous Integration for moems mems and nems
IEEE Journal of Selected Topics in Quantum Electronics, 2011Co-Authors: Martin Lapisa, Goran Stemme, Frank NiklausAbstract:Wafer-level Heterogeneous Integration technologies for microoptoelectromechanical systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical systems (NEMS) enable the combination of dissimilar classes of materials and components into single systems. Thus, high-performance materials and subsystems can be combined in ways that would otherwise not be possible, and thereby forming complex and highly integrated micro- or nanosystems. Examples include the Integration of high-performance optical, electrical or mechanical materials such as monocrystalline silicon, graphene or III-V materials with integrated electronic circuits. In this paper the state-of-the-art of wafer-level Heterogeneous Integration technologies suitable for MOEMS, MEMS, and NEMS devices are reviewed. Various Heterogeneous MOEMS, MEMS, and NEMS devices that have been described in literature are presented.