The Experts below are selected from a list of 13344 Experts worldwide ranked by ideXlab platform

Bernd Rech - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset in Heterojunctions between crystalline silicon and amorphous silicon sub oxides a siox h 0 x 2
    Applied Physics Letters, 2015
    Co-Authors: Martin Liebhaber, Lars Korte, Bernd Rech, Makaela Mews, T F Schulze, K Lips
    Abstract:

    The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0  4 eV for the a-SiO2/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiOx:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔEV. Our method is readily applicable to other Heterojunctions.

  • planar rear emitter back contact silicon heterojunction solar cells
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon Heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of numerical computer simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.

  • planar rear emitter back contact amorphous crystalline silicon heterojunction solar cells recash precash
    Photovoltaic Specialists Conference, 2008
    Co-Authors: R. Stangl, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    Point / stripe contacted, planar rear emitter back contact amorphous/crystalline Silicon, a-Si:H/c-Si, heterojunction solar cells are presented (RECASH / PRECASH solar cells), combining the high efficiency concepts of silicon Heterojunctions (high V OC potential) and back contacts (high I SC potential). Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a low temperature deposited rear side planar amorphous silicon emitter layer. The new contacting schemes for back contacted a-Si:H/c-Si heterojunction solar cells require less structuring and enable the use of low cost patterning technologies which result in a large structure size (i.e. inkjet printing, screen printing). The efficiency potential of back contacted a-Si:H/c-Si heterojunction solar cells (> 24 %) is discussed by means of numerical computer simulation. First RECASH and PRECASH solar cells have been realized and are compared to a conventional front contacted a-Si:H/c-Si heterojunction solar cell (SHJ). The predicted higher short circuit current potential of back contacted a-Si:H/c-Si heterojunction solar cells could be proofed.

K Lips - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset in Heterojunctions between crystalline silicon and amorphous silicon sub oxides a siox h 0 x 2
    Applied Physics Letters, 2015
    Co-Authors: Martin Liebhaber, Lars Korte, Bernd Rech, Makaela Mews, T F Schulze, K Lips
    Abstract:

    The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0  4 eV for the a-SiO2/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiOx:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔEV. Our method is readily applicable to other Heterojunctions.

  • planar rear emitter back contact silicon heterojunction solar cells
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon Heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of numerical computer simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.

  • planar rear emitter back contact amorphous crystalline silicon heterojunction solar cells recash precash
    Photovoltaic Specialists Conference, 2008
    Co-Authors: R. Stangl, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    Point / stripe contacted, planar rear emitter back contact amorphous/crystalline Silicon, a-Si:H/c-Si, heterojunction solar cells are presented (RECASH / PRECASH solar cells), combining the high efficiency concepts of silicon Heterojunctions (high V OC potential) and back contacts (high I SC potential). Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a low temperature deposited rear side planar amorphous silicon emitter layer. The new contacting schemes for back contacted a-Si:H/c-Si heterojunction solar cells require less structuring and enable the use of low cost patterning technologies which result in a large structure size (i.e. inkjet printing, screen printing). The efficiency potential of back contacted a-Si:H/c-Si heterojunction solar cells (> 24 %) is discussed by means of numerical computer simulation. First RECASH and PRECASH solar cells have been realized and are compared to a conventional front contacted a-Si:H/c-Si heterojunction solar cell (SHJ). The predicted higher short circuit current potential of back contacted a-Si:H/c-Si heterojunction solar cells could be proofed.

Mingchao Xiao - One of the best experts on this subject based on the ideXlab platform.

  • sub 5 nm single crystalline organic p n Heterojunctions
    Nature Communications, 2021
    Co-Authors: Mingchao Xiao, Jie Liu, Chuan Liu, Guangchao Han, Yanjun Shi, Xi Zhang, Zitong Liu, Xike Gao, Zhengxu Cai
    Abstract:

    The cornerstones of emerging high-performance organic photovoltaic devices are bulk Heterojunctions, which usually contain both structure disorders and bicontinuous interpenetrating grain boundaries with interfacial defects. This feature complicates fundamental understanding of their working mechanism. Highly-ordered crystalline organic p–n Heterojunctions with well-defined interface and tailored layer thickness, are highly desirable to understand the nature of organic Heterojunctions. However, direct growth of such a crystalline organic p–n heterojunction remains a huge challenge. In this work, we report a design rationale to fabricate monolayer molecular crystals based p–n Heterojunctions. In an organic field-effect transistor configuration, we achieved a well-balanced ambipolar charge transport, comparable to single component monolayer molecular crystals devices, demonstrating the high-quality interface in the Heterojunctions. In an organic solar cell device based on the p–n junction, we show the device exhibits gate-tunable open-circuit voltage up to 1.04 V, a record-high value in organic single crystalline photovoltaics. Realizing organic p–n junctions based on ordered crystalline materials with dimensions comparable to the exciton diffusion length of most organic semiconductors remains a challenge. Here, the authors report a strategy to form molecular monolayer crystal-based p–n junctions with thickness below 5 nm.

R. Stangl - One of the best experts on this subject based on the ideXlab platform.

  • planar rear emitter back contact silicon heterojunction solar cells
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon Heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of numerical computer simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.

  • planar rear emitter back contact amorphous crystalline silicon heterojunction solar cells recash precash
    Photovoltaic Specialists Conference, 2008
    Co-Authors: R. Stangl, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    Point / stripe contacted, planar rear emitter back contact amorphous/crystalline Silicon, a-Si:H/c-Si, heterojunction solar cells are presented (RECASH / PRECASH solar cells), combining the high efficiency concepts of silicon Heterojunctions (high V OC potential) and back contacts (high I SC potential). Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a low temperature deposited rear side planar amorphous silicon emitter layer. The new contacting schemes for back contacted a-Si:H/c-Si heterojunction solar cells require less structuring and enable the use of low cost patterning technologies which result in a large structure size (i.e. inkjet printing, screen printing). The efficiency potential of back contacted a-Si:H/c-Si heterojunction solar cells (> 24 %) is discussed by means of numerical computer simulation. First RECASH and PRECASH solar cells have been realized and are compared to a conventional front contacted a-Si:H/c-Si heterojunction solar cell (SHJ). The predicted higher short circuit current potential of back contacted a-Si:H/c-Si heterojunction solar cells could be proofed.

Lars Korte - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset in Heterojunctions between crystalline silicon and amorphous silicon sub oxides a siox h 0 x 2
    Applied Physics Letters, 2015
    Co-Authors: Martin Liebhaber, Lars Korte, Bernd Rech, Makaela Mews, T F Schulze, K Lips
    Abstract:

    The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0  4 eV for the a-SiO2/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiOx:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔEV. Our method is readily applicable to other Heterojunctions.

  • physics and technology of amorphous crystalline heterostructure silicon solar cells
    2012
    Co-Authors: Wilfried Van Sark, Lars Korte, F Roca
    Abstract:

    Foreword.- Introduction.- Status of heterojunction solar cell R&D.- Basic features of Heterojunctions illustrated by selected experimental methods and results.- Deposition methods of thin film silicon.- Electronic properties of ultrathin a-Si:H layers and the a-Si:H/c-Si interface.- Degradation of (bulk and thin film) a-Si and interface passivation.- Photoluminescence and electroluminescence for a Si:H/c Si device and interface characterization.- Deposition and properties of transparent conductive oxides.- Metallization and formation of contacts.- Electrical and optical characterization of a-Si:H/c Si cells.- Wet-chemical pre-treatment of c Si for a-Si:H/c-Si Heterojunctions.- Theory of Heterojunctions and the determination of band offsets from electrical measurements.- Modeling and simulation of a Si:H/c Si cells.- Surface passivation using ALD Al2O3.- Introduction to AFORS-HET.- Hands-on experience with simulation tools.- a-Si:H/c-Si heterojunction and other high efficiency solar cells: a comparison.- Rear contact cells.- Progress in systematic industrialization of Hetero-Junction-based Solar Cell technology.

  • planar rear emitter back contact silicon heterojunction solar cells
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd Rech
    Abstract:

    A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon Heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of numerical computer simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.