The Experts below are selected from a list of 1131 Experts worldwide ranked by ideXlab platform

Mark C. Hersam - One of the best experts on this subject based on the ideXlab platform.

  • Atomic Covalent Functionalization of Graphene
    Accounts of chemical research, 2012
    Co-Authors: James E. Johns, Mark C. Hersam
    Abstract:

    Although graphene’s physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp2 bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including High Frequency Electronics, broadband photodetectors, biological and gas sensors, and transparent conductive coatings. Despite this promise, researchers could apply graphene more routinely in real-world technologies if they could chemically adjust graphene’s electronic properties. For example, the covalent modification of graphene to create a band gap comparable to silicon (∼1 eV) would enable its use in digital Electronics, and larger band gaps would provide new opportunities for graphene-based photonics. Toward this end, researchers have focused considerable effort on the chemical functionalization of gra...

  • Flexible gigahertz transistors derived from solution-based single-layer graphene
    Nano Letters, 2012
    Co-Authors: C Sire, Florence Ardiaca, Jung Woo T Seo, Sylvie Lepilliet, Mark C. Hersam, Gilles Dambrine, Henri Happy, Vincent Derycke
    Abstract:

    Flexible Electronics mostly relies on organic semiconductors but\nthe limited carrier velocity in polymers and molecular films prevents\ntheir use at frequencies above a few megahertz. Conversely, the High\npotential of graphene for High-Frequency Electronics on rigid substrates\nwas recently demonstrated. We conducted the first study of solution-based\ngraphene transistors at gigahertz frequencies, and we show that solution-based\nsingle-layer graphene ideally combines the required properties to\nachieve High speed flexible Electronics on plastic substrates. Our\ngraphene flexible transistors have current gain cutoff frequencies\nof 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio Frequency\nmeasurements directly performed on bent samples show remarkable mechanical\nstability of these devices and demonstrate the advantages of solution-based\ngraphene field-effect transistors over other types of flexible transistors\nbased on organic materials.

  • 80 GHz field-effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    Applied Physics Letters, 2009
    Co-Authors: L Nougaret, Vincent Derycke, Gilles Dambrine, Henri Happy, J.p. Bourgoin, Alexander A. Green, Mark C. Hersam
    Abstract:

    This paper presents the High Frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of High purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for High Frequency Electronics.

Vincent Derycke - One of the best experts on this subject based on the ideXlab platform.

  • Flexible gigahertz transistors derived from solution-based single-layer graphene
    Nano Letters, 2012
    Co-Authors: C Sire, Florence Ardiaca, Jung Woo T Seo, Sylvie Lepilliet, Mark C. Hersam, Gilles Dambrine, Henri Happy, Vincent Derycke
    Abstract:

    Flexible Electronics mostly relies on organic semiconductors but\nthe limited carrier velocity in polymers and molecular films prevents\ntheir use at frequencies above a few megahertz. Conversely, the High\npotential of graphene for High-Frequency Electronics on rigid substrates\nwas recently demonstrated. We conducted the first study of solution-based\ngraphene transistors at gigahertz frequencies, and we show that solution-based\nsingle-layer graphene ideally combines the required properties to\nachieve High speed flexible Electronics on plastic substrates. Our\ngraphene flexible transistors have current gain cutoff frequencies\nof 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio Frequency\nmeasurements directly performed on bent samples show remarkable mechanical\nstability of these devices and demonstrate the advantages of solution-based\ngraphene field-effect transistors over other types of flexible transistors\nbased on organic materials.

  • Millimeter wave field effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    2011 IEEE MTT-S International Microwave Symposium, 2011
    Co-Authors: Henri Happy, Vincent Derycke, L Nougaret, Gilles Dambrine
    Abstract:

    Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for High Frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating Frequency above 80GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for High Frequency Electronics.

  • 80 GHz field-effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    Applied Physics Letters, 2009
    Co-Authors: L Nougaret, Vincent Derycke, Gilles Dambrine, Henri Happy, J.p. Bourgoin, Alexander A. Green, Mark C. Hersam
    Abstract:

    This paper presents the High Frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of High purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for High Frequency Electronics.

  • overview of carbon nanotubes for High Frequency Electronics
    Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009
    Co-Authors: Gilles Dambrine, Vincent Derycke, Henri Happy, L Nougaret, N Chimot, Jeanphilippe Bourgoin
    Abstract:

    In this paper, we describe the significant results showing the main headways of Carbon-Nanotubes- based-devices for High Frequency applications.

Gilles Dambrine - One of the best experts on this subject based on the ideXlab platform.

  • Flexible gigahertz transistors derived from solution-based single-layer graphene
    Nano Letters, 2012
    Co-Authors: C Sire, Florence Ardiaca, Jung Woo T Seo, Sylvie Lepilliet, Mark C. Hersam, Gilles Dambrine, Henri Happy, Vincent Derycke
    Abstract:

    Flexible Electronics mostly relies on organic semiconductors but\nthe limited carrier velocity in polymers and molecular films prevents\ntheir use at frequencies above a few megahertz. Conversely, the High\npotential of graphene for High-Frequency Electronics on rigid substrates\nwas recently demonstrated. We conducted the first study of solution-based\ngraphene transistors at gigahertz frequencies, and we show that solution-based\nsingle-layer graphene ideally combines the required properties to\nachieve High speed flexible Electronics on plastic substrates. Our\ngraphene flexible transistors have current gain cutoff frequencies\nof 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio Frequency\nmeasurements directly performed on bent samples show remarkable mechanical\nstability of these devices and demonstrate the advantages of solution-based\ngraphene field-effect transistors over other types of flexible transistors\nbased on organic materials.

  • Millimeter wave field effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    2011 IEEE MTT-S International Microwave Symposium, 2011
    Co-Authors: Henri Happy, Vincent Derycke, L Nougaret, Gilles Dambrine
    Abstract:

    Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for High Frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating Frequency above 80GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for High Frequency Electronics.

  • 60 GHz current gain cut-off Frequency graphene nanoribbon FET
    International Journal of Microwave and Wireless Technologies, 2010
    Co-Authors: Nan Meng, Gilles Dambrine, Francsico-javier Ferrer, Dominique Vignaud, Henri Happy
    Abstract:

    We report investigations on the fabrication and characterization of graphene nanoribbon (GNR) field-effect transistors. Graphene layers are obtained from the thermal decomposition of a Si-face 4H-SiC substrate. To achieve High dynamic performance, a structure with an array of GNR connected in parallel was fabricated by e-beam lithography. The best intrinsic current gain cut-off Frequency of 60 GHz and maximum oscillation Frequency of 28 GHz were achieved. This study demonstrates the exciting potential of GNR in High-Frequency Electronics.

  • 60 GHz current gain cut-off Frequency graphene nanoribbon FET
    International Journal of Microwave and Wireless Technologies, 2010
    Co-Authors: Nan Meng, Gilles Dambrine, Francsico-javier Ferrer, Dominique Vignaud, Henri Happy
    Abstract:

    We report investigations on the fabrication and characterization of graphene nanoribbon (GNR) field-effect transistors. Graphene layers are obtained from the thermal decomposition of a Si-face 4H-SiC substrate. To achieve High dynamic performance, a structure with an array of GNR connected in parallel was fabricated by e-beam lithography. The best intrinsic current gain cut-off Frequency of 60 GHz and maximum oscillation Frequency of 28 GHz were achieved. This study demonstrates the exciting potential of GNR in High-Frequency Electronics.

  • 80 GHz field-effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    Applied Physics Letters, 2009
    Co-Authors: L Nougaret, Vincent Derycke, Gilles Dambrine, Henri Happy, J.p. Bourgoin, Alexander A. Green, Mark C. Hersam
    Abstract:

    This paper presents the High Frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of High purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for High Frequency Electronics.

Henri Happy - One of the best experts on this subject based on the ideXlab platform.

  • Flexible gigahertz transistors derived from solution-based single-layer graphene
    Nano Letters, 2012
    Co-Authors: C Sire, Florence Ardiaca, Jung Woo T Seo, Sylvie Lepilliet, Mark C. Hersam, Gilles Dambrine, Henri Happy, Vincent Derycke
    Abstract:

    Flexible Electronics mostly relies on organic semiconductors but\nthe limited carrier velocity in polymers and molecular films prevents\ntheir use at frequencies above a few megahertz. Conversely, the High\npotential of graphene for High-Frequency Electronics on rigid substrates\nwas recently demonstrated. We conducted the first study of solution-based\ngraphene transistors at gigahertz frequencies, and we show that solution-based\nsingle-layer graphene ideally combines the required properties to\nachieve High speed flexible Electronics on plastic substrates. Our\ngraphene flexible transistors have current gain cutoff frequencies\nof 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio Frequency\nmeasurements directly performed on bent samples show remarkable mechanical\nstability of these devices and demonstrate the advantages of solution-based\ngraphene field-effect transistors over other types of flexible transistors\nbased on organic materials.

  • Millimeter wave field effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    2011 IEEE MTT-S International Microwave Symposium, 2011
    Co-Authors: Henri Happy, Vincent Derycke, L Nougaret, Gilles Dambrine
    Abstract:

    Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for High Frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating Frequency above 80GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for High Frequency Electronics.

  • 60 GHz current gain cut-off Frequency graphene nanoribbon FET
    International Journal of Microwave and Wireless Technologies, 2010
    Co-Authors: Nan Meng, Gilles Dambrine, Francsico-javier Ferrer, Dominique Vignaud, Henri Happy
    Abstract:

    We report investigations on the fabrication and characterization of graphene nanoribbon (GNR) field-effect transistors. Graphene layers are obtained from the thermal decomposition of a Si-face 4H-SiC substrate. To achieve High dynamic performance, a structure with an array of GNR connected in parallel was fabricated by e-beam lithography. The best intrinsic current gain cut-off Frequency of 60 GHz and maximum oscillation Frequency of 28 GHz were achieved. This study demonstrates the exciting potential of GNR in High-Frequency Electronics.

  • 60 GHz current gain cut-off Frequency graphene nanoribbon FET
    International Journal of Microwave and Wireless Technologies, 2010
    Co-Authors: Nan Meng, Gilles Dambrine, Francsico-javier Ferrer, Dominique Vignaud, Henri Happy
    Abstract:

    We report investigations on the fabrication and characterization of graphene nanoribbon (GNR) field-effect transistors. Graphene layers are obtained from the thermal decomposition of a Si-face 4H-SiC substrate. To achieve High dynamic performance, a structure with an array of GNR connected in parallel was fabricated by e-beam lithography. The best intrinsic current gain cut-off Frequency of 60 GHz and maximum oscillation Frequency of 28 GHz were achieved. This study demonstrates the exciting potential of GNR in High-Frequency Electronics.

  • 80 GHz field-effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    Applied Physics Letters, 2009
    Co-Authors: L Nougaret, Vincent Derycke, Gilles Dambrine, Henri Happy, J.p. Bourgoin, Alexander A. Green, Mark C. Hersam
    Abstract:

    This paper presents the High Frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of High purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for High Frequency Electronics.

Alexander A. Green - One of the best experts on this subject based on the ideXlab platform.

  • High-Frequency performance of scaled carbon nanotube array field-effect transistors
    Applied Physics Letters, 2012
    Co-Authors: Mathias Steiner, Keith A. Jenkins, Jung Woo T Seo, Damon B Farmer, Michael Engel, Yu-ming Lin, Jefford J. Humes, Nathan L. Yoder, Alexander A. Green
    Abstract:

    We report the radio-Frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of Highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the Highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in High-Frequency Electronics.

  • 80 GHz field-effect transistors produced using High purity semiconducting single-walled carbon nanotubes
    Applied Physics Letters, 2009
    Co-Authors: L Nougaret, Vincent Derycke, Gilles Dambrine, Henri Happy, J.p. Bourgoin, Alexander A. Green, Mark C. Hersam
    Abstract:

    This paper presents the High Frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of High purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record Frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for High Frequency Electronics.