The Experts below are selected from a list of 4338 Experts worldwide ranked by ideXlab platform

Qin Lei - One of the best experts on this subject based on the ideXlab platform.

  • Smart current source gate driver for fast Switching and cross-talk suppression of SiC MOSFET
    2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019
    Co-Authors: Chunhui Liu, Qin Lei
    Abstract:

    Wide band gap device, like SiC and GaN, have High Switching speed potential. However, the actual speed in practical use is limited by the gate loop parasitic and the interaction between High Side Switch and low Side Switch in a single phase-leg configuration known as cross-talk. This paper proposes an isolated current source gate driver (CSGD) with cross-talk suppression capability to take full advantage of the inherent High Switching speed ability of WBG device. The current source is better than voltage source since it can ignore the gate loop parasitic inductance. And by applying variable gate voltage, the cross-talk problem can be mitigated. LTspice simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.

  • Smart Self-driving Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
    2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019
    Co-Authors: Chunhui Liu, Zhengda Zhang, Yifu Liu, Qin Lei
    Abstract:

    Wide band gap device, like SiC and GaN, have High Switching speed potential. However, the actual speed in practical application is limited by the gate loop parasitic and the interaction between High Side Switch and low Side Switch in a single phase-leg configuration, known as crosstalk. This paper proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent High Switching speed ability of WBG device. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original Vgs voltage as auxiliary circuit driving signal, the gate driver dose not introduce any control signal which avoids the additional signal/power isolation and makes the auxiliary circuit very easy to be implemented on the existing commercial gate driver. LTSPICE simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.

Gyu Cheol Lim - One of the best experts on this subject based on the ideXlab platform.

  • Si-IGBT / SiC-MOSFET Hybrid Inverter Control Method for Reduced Loss and Switching Ripple
    2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020
    Co-Authors: Jonghun Choi, Gyu Cheol Lim
    Abstract:

    In this paper, a hybrid two-level voltage source inverter which utilizes a Si-IGBT as the High-Side Switch and a SiC-MOSFET as the low-Side Switch is suggested. Due to its uneven Switch characteristics, proper discontinuous pulse width modulation (DPWM) method is applied to reduce losses generated in the inverter effectively. In addition, variable Switching frequency control method is proposed to reduce the Switching ripple with the cost of low increase of losses. The suggested hybrid inverter is compared to the full Si-IGBT and full SiC-MOSFET inverters in the perspective of losses and ripples.

Jonghun Choi - One of the best experts on this subject based on the ideXlab platform.

  • si igbt sic mosfet hybrid inverter control method for reduced loss and Switching ripple
    Applied Power Electronics Conference, 2020
    Co-Authors: Jonghun Choi, Jungik Ha
    Abstract:

    In this paper, a hybrid two-level voltage source inverter which utilizes a Si-IGBT as the High-Side Switch and a SiC-MOSFET as the low-Side Switch is suggested. Due to its uneven Switch characteristics, proper discontinuous pulse width modulation (DPWM) method is applied to reduce losses generated in the inverter effectively. In addition, variable Switching frequency control method is proposed to reduce the Switching ripple with the cost of low increase of losses. The suggested hybrid inverter is compared to the full Si-IGBT and full SiC-MOSFET inverters in the perspective of losses and ripples.

  • Si-IGBT / SiC-MOSFET Hybrid Inverter Control Method for Reduced Loss and Switching Ripple
    2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020
    Co-Authors: Jonghun Choi, Gyu Cheol Lim
    Abstract:

    In this paper, a hybrid two-level voltage source inverter which utilizes a Si-IGBT as the High-Side Switch and a SiC-MOSFET as the low-Side Switch is suggested. Due to its uneven Switch characteristics, proper discontinuous pulse width modulation (DPWM) method is applied to reduce losses generated in the inverter effectively. In addition, variable Switching frequency control method is proposed to reduce the Switching ripple with the cost of low increase of losses. The suggested hybrid inverter is compared to the full Si-IGBT and full SiC-MOSFET inverters in the perspective of losses and ripples.

Chunhui Liu - One of the best experts on this subject based on the ideXlab platform.

  • Smart current source gate driver for fast Switching and cross-talk suppression of SiC MOSFET
    2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019
    Co-Authors: Chunhui Liu, Qin Lei
    Abstract:

    Wide band gap device, like SiC and GaN, have High Switching speed potential. However, the actual speed in practical use is limited by the gate loop parasitic and the interaction between High Side Switch and low Side Switch in a single phase-leg configuration known as cross-talk. This paper proposes an isolated current source gate driver (CSGD) with cross-talk suppression capability to take full advantage of the inherent High Switching speed ability of WBG device. The current source is better than voltage source since it can ignore the gate loop parasitic inductance. And by applying variable gate voltage, the cross-talk problem can be mitigated. LTspice simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.

  • Smart Self-driving Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
    2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019
    Co-Authors: Chunhui Liu, Zhengda Zhang, Yifu Liu, Qin Lei
    Abstract:

    Wide band gap device, like SiC and GaN, have High Switching speed potential. However, the actual speed in practical application is limited by the gate loop parasitic and the interaction between High Side Switch and low Side Switch in a single phase-leg configuration, known as crosstalk. This paper proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent High Switching speed ability of WBG device. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original Vgs voltage as auxiliary circuit driving signal, the gate driver dose not introduce any control signal which avoids the additional signal/power isolation and makes the auxiliary circuit very easy to be implemented on the existing commercial gate driver. LTSPICE simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.

Hans-peter Nee - One of the best experts on this subject based on the ideXlab platform.

  • High-Voltage Tapped-Inductor Buck Converter Utilizing an Autonomous High-Side Switch
    IEEE Transactions on Industrial Electronics, 2015
    Co-Authors: Tomas Modeer, Staffan Norrga, Hans-peter Nee
    Abstract:

    A High-voltage tapped-inductor buck converter utilizing a novel autonomous High-voltage valve is presented in this paper. Its application as auxiliary power supply for High-power cascaded-converter submodules is discussed, followed by a presentation of the most challenging problems in designing a low-power High-voltage step-down converter. The TI-buck converter topology is analyzed, which together with the novel autonomous High-voltage valve overcomes most of the problems. Analytical expressions describing the operation as well as circuit simulations are presented. Finally, an experimental evaluation of a 3-kV 70-W prototype converter utilizing the proposed autonomous High-voltage valve with series-connected super-junction MOSFETs is presented.