The Experts below are selected from a list of 201 Experts worldwide ranked by ideXlab platform
V.i. Kozub - One of the best experts on this subject based on the ideXlab platform.
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Giant magnetoresistance for ensembles of ferromagnetic granules in variable range Hopping Conductivity regime
Solid State Communications, 2013Co-Authors: V.i. Kozub, A.v. ShumilinAbstract:Abstract We study an effect of moderate magnetic field on variable range Hopping Conductivity in arrays of ferromagnetic granules separated by tunnel barriers. It is shown that the resulting magnetoresistance can be significantly larger than the standard “giant” magnetoresistance in Fe–N–Fe–N… multilayers. The effect is related to a gain in densities of states available for the virtual processes within the intermediate granules due to magnetic-field induced alignment of the granule magnetizations.
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Magnetoresistance related to on-site spin correlations in the nearest neighbor Hopping Conductivity
Solid State Communications, 1998Co-Authors: N.v. Agrinskaya, V.i. KozubAbstract:Abstract We consider the magnetoresistance in the nearest neighbor Hopping Conductivity with an account of both Hubbard and spin correlations. It is shown that no spin magnetoresistance exists for the Conductivity within the lower Hubbard band. In contrast, the e 2 Conductivity involving the upper Hubbard band states exhibits an increase of activation energy which in high magnetic fields has a universal form μ 0 gH . The results obtained are in good agreement with existing experimental data for temperature dependent magnetoresistance in different doped materials.
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Low-frequency noise due to site energy fluctuations in Hopping Conductivity
Solid State Communications, 1996Co-Authors: V.i. KozubAbstract:The noise in Hopping Conductivity arising due to Hopping sites energy fluctuations (as suggested by Shlimak et al., Solid State Commun., 93, 829, 1995) is considered. The fluctuations are related to changes of local potentials resulting due to hops within some pairs of sites not incorporated into the percolation cluster; such pairs can be identified as “electronic two-level systems” or “fluctuators”. A dependence of the noise on both fluctuators statistics and percolation cluster morphology is analyzed. An analog of Hooge relation for the mechanism discussed is derived. For the case of nearest neighbor Hopping an independence of relative noise power from temperature is predicted in agreement with recent experimental results by Shlimak et al.
S. M. Podgornykh - One of the best experts on this subject based on the ideXlab platform.
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quantum hall effect andnanoheterostructures Hopping Conductivity in n ingaas inalas
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I S VasilevskiiAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
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variable range Hopping Conductivity in quantum hall regime for hgte based heterostructure
Journal of Low Temperature Physics, 2016Co-Authors: Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, M R Popov, G I Harus, S A Dvoretsky, N N MikhailovAbstract:We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures \(T =(2.9\div 50)\) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of Hopping conduction in a strongly localized electron system. An analysis of the variable-range Hopping Conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.
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Quantum Hall effect andnanoheterostructures Hopping Conductivity in n-InGaAs/InAlAs
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. VinichenkoAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
M. V. Yakunin - One of the best experts on this subject based on the ideXlab platform.
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quantum hall effect andnanoheterostructures Hopping Conductivity in n ingaas inalas
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I S VasilevskiiAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
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variable range Hopping Conductivity in quantum hall regime for hgte based heterostructure
Journal of Low Temperature Physics, 2016Co-Authors: Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, M R Popov, G I Harus, S A Dvoretsky, N N MikhailovAbstract:We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures \(T =(2.9\div 50)\) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of Hopping conduction in a strongly localized electron system. An analysis of the variable-range Hopping Conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.
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Quantum Hall effect andnanoheterostructures Hopping Conductivity in n-InGaAs/InAlAs
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. VinichenkoAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
S. V. Gudina - One of the best experts on this subject based on the ideXlab platform.
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quantum hall effect andnanoheterostructures Hopping Conductivity in n ingaas inalas
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I S VasilevskiiAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
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variable range Hopping Conductivity in quantum hall regime for hgte based heterostructure
Journal of Low Temperature Physics, 2016Co-Authors: Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, M R Popov, G I Harus, S A Dvoretsky, N N MikhailovAbstract:We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures \(T =(2.9\div 50)\) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of Hopping conduction in a strongly localized electron system. An analysis of the variable-range Hopping Conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.
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Quantum Hall effect andnanoheterostructures Hopping Conductivity in n-InGaAs/InAlAs
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. VinichenkoAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
Yu. G. Arapov - One of the best experts on this subject based on the ideXlab platform.
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quantum hall effect andnanoheterostructures Hopping Conductivity in n ingaas inalas
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I S VasilevskiiAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
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variable range Hopping Conductivity in quantum hall regime for hgte based heterostructure
Journal of Low Temperature Physics, 2016Co-Authors: Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, M R Popov, G I Harus, S A Dvoretsky, N N MikhailovAbstract:We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures \(T =(2.9\div 50)\) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of Hopping conduction in a strongly localized electron system. An analysis of the variable-range Hopping Conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.
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Quantum Hall effect andnanoheterostructures Hopping Conductivity in n-InGaAs/InAlAs
Semiconductors, 2016Co-Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. VinichenkoAbstract:The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of Hopping Conductivity in a strongly localized electron system. The analysis of variable-range Hopping Conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.