The Experts below are selected from a list of 5070 Experts worldwide ranked by ideXlab platform

Wolfgang Stolz - One of the best experts on this subject based on the ideXlab platform.

  • High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
    Solar Energy Materials and Solar Cells, 2000
    Co-Authors: Carsten Agert, Frank Dimroth, U. Schubert, Andreas W. Bett, S. Leu, Wolfgang Stolz
    Abstract:

    Abstract The alternative As-precursor tertiarybutylarsine (TBAs) is used to grow (AlGa)As–GaAs heteroface solar cell structures. In a Horizontal Reactor (AIX200) a low growth temperature of 625°C and a low V/III-ratio of 10 was used. Solar cell structures using a arsine (AsH3)-based MOVPE process were grown in a multi-wafer Reactor (AIX2600G3) using growth temperatures of 700°C and a V/III-ratio of 31. The solar cell efficiencies of both structures are 24.2% (AM 1.5 g). The obtained efficiency values are state of the art and demonstrate that TBAs can be an alternative to the more commonly used arsine with no decrease in the solar cell performance.

Pedro Pereira-almao - One of the best experts on this subject based on the ideXlab platform.

Carsten Agert - One of the best experts on this subject based on the ideXlab platform.

  • High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
    Solar Energy Materials and Solar Cells, 2000
    Co-Authors: Carsten Agert, Frank Dimroth, U. Schubert, Andreas W. Bett, S. Leu, Wolfgang Stolz
    Abstract:

    Abstract The alternative As-precursor tertiarybutylarsine (TBAs) is used to grow (AlGa)As–GaAs heteroface solar cell structures. In a Horizontal Reactor (AIX200) a low growth temperature of 625°C and a low V/III-ratio of 10 was used. Solar cell structures using a arsine (AsH3)-based MOVPE process were grown in a multi-wafer Reactor (AIX2600G3) using growth temperatures of 700°C and a V/III-ratio of 31. The solar cell efficiencies of both structures are 24.2% (AM 1.5 g). The obtained efficiency values are state of the art and demonstrate that TBAs can be an alternative to the more commonly used arsine with no decrease in the solar cell performance.

Yoshinori Hara - One of the best experts on this subject based on the ideXlab platform.

  • growth of znse thin films by metalorganic chemical vapor deposition using nitrogen trifluoride
    Applied Surface Science, 1997
    Co-Authors: Y. Noda, Mitsuharu Yamabe, Tetsuya Ishikawa, Yoshinori Hara
    Abstract:

    The radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe films on GaAs (100) was performed at 723 K under atmospheric pressure by using rf-heated Horizontal Reactor. Diethylzinc (DEZn) and diethylselenide (DESe) as source materials were carried by H 2 gas, where the [VI]/[II] ratio was kept at 1. Nitrogen trifluoride (NF 3 ) was used as co-reactant. With an increase of NF 3 flux, the growth rate was drastically enhanced, which might be due to dealkylation by chain reactions between DESe and NF 3 . Photoluminescence of the ZnSe films measured for the films grown with small NF 3 flux indicated the donor-acceptor (D-A) pair emission. The Hall coefficient measured using Au Ohmic contacts indicated the hole concentration in the order of magnitude of 10 22 m -3 . The results suggest that the nitrogen atoms from NF 3 might be incorporated into the grown films as acceptors.

John Thompson - One of the best experts on this subject based on the ideXlab platform.