The Experts below are selected from a list of 6774 Experts worldwide ranked by ideXlab platform
B. Hoex - One of the best experts on this subject based on the ideXlab platform.
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Laser Chemical Processing of n-Type Emitters for Solid-Phase Crystallized Polysilicon Thin-Film Solar Cells
IEEE Journal of Photovoltaics, 2014Co-Authors: S. Virasawmy, P. I. Widenborg, N. Palina, C. Ke, J. Wong, S. Varlamov, B. HoexAbstract:We report on the application of laser chemical Processing (LCP) to fabricate n-type emitters for polysilicon thin-film solar cells on glass. Sheet resistance values of 2-5 kΩ/□ with a peak phosphorus doping concentration in the range 8 × 1018 -1 × 1019 cm-3 at a shallow doping depth of less than 350 nm are achieved. After dopant activation and a Hydrogenation Process, the best cell has an average Voc of (446 ± 7) mV and a pseudofill factor (pFF) of (68.3 ± 0.9)%. This paper demonstrates that LCP can be successfully applied to fabricate an active layer for polysilicon thin-film solar cells on glass. Further improvement in the Voc and the pFF may be possible by optimizing the post-LCP annealing and Hydrogenation Process, as well as using a poly-Si film of superior material quality.
Dario Della Sala - One of the best experts on this subject based on the ideXlab platform.
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Electrical Stress Degradation of Small-Grain Polysilicon Thin-Film Transistors
IEEE Transactions on Electron Devices, 2007Co-Authors: Domenico Palumbo, Silvia Masala, Paolo Tassini, Alfredo Rubino, Dario Della SalaAbstract:This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a Hydrogenation Process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states
Armin G. Aberle - One of the best experts on this subject based on the ideXlab platform.
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Static Large-Area Hydrogenation of Polycrystalline Silicon Thin-Film Solar Cells on Glass Using a Linear Microwave Plasma Source
IEEE Journal of Photovoltaics, 2012Co-Authors: Hidayat Hidayat, Per I. Widenborg, Avishek Kumar, Armin G. AberleAbstract:Hydrogenation of polycrystalline silicon thin-film solar cells on glass is performed to improve the open-circuit voltage Voc of the devices. The Hydrogenation Process is performed using linear microwave plasma sources that are capable of generating a uniform hydrogen-argon plasma over a large area. The substrate is fixed (i.e., does not move) during the Hydrogenation Process. The optical emission intensities from the hydrogen-argon plasma are recorded at two wavelengths using an optical emission spectroscopy system and are used to study the impact of several Process parameters. The impact of these Process parameters on the device's Voc is also studied. We demonstrate that this plasma reactor is able to hydrogenate samples with a size of up to 400 cm2. The uniformity of the Hydrogenation Process is evaluated by measuring the 1-sun Voc with a suns-Voc tester, giving voltage variations of less than ±3%. The highest average Voc achieved in this study is 465 mV on a 10 cm × 10 cm textured sample and 428 mV on a 20 cm × 20 cm textured sample. In addition, secondary ion mass spectroscopy is used to measure the hydrogen concentration in the poly-Si films, giving an average concentration of about 6 × 1019 cm-3.
Tsu-jae King - One of the best experts on this subject based on the ideXlab platform.
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Plasma ion implantation Hydrogenation of poly-Si CMOS thin-film transistors at low energy and high dose rate using an inductively-coupled plasma source
IEEE Transactions on Electron Devices, 1998Co-Authors: Yuanzhong Zhou, T. Nakatsugawa, I.f. Husein, Chung Chan, Tsu-jae KingAbstract:Defect passivation in polycrystalline silicon (poly-Si) CMOS thin-film transistors (TFT's) has been performed by plasma ion implantation (PII) Hydrogenation Process. Implantation at low energy (2 keV) and high dose rate(/spl sim/10/sup 16//cm/sup 2/ S) was achieved by an inductively-coupled plasma source. The device parameter improvements are saturated in 3-4 min, which is much shorter than other Hydrogenation methods reported in the literature. The stress measurements indicate that the devices hydrogenated by this new technique have much better long-term reliability than that hydrogenated by other techniques.
S. Virasawmy - One of the best experts on this subject based on the ideXlab platform.
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Laser Chemical Processing of n-Type Emitters for Solid-Phase Crystallized Polysilicon Thin-Film Solar Cells
IEEE Journal of Photovoltaics, 2014Co-Authors: S. Virasawmy, P. I. Widenborg, N. Palina, C. Ke, J. Wong, S. Varlamov, B. HoexAbstract:We report on the application of laser chemical Processing (LCP) to fabricate n-type emitters for polysilicon thin-film solar cells on glass. Sheet resistance values of 2-5 kΩ/□ with a peak phosphorus doping concentration in the range 8 × 1018 -1 × 1019 cm-3 at a shallow doping depth of less than 350 nm are achieved. After dopant activation and a Hydrogenation Process, the best cell has an average Voc of (446 ± 7) mV and a pseudofill factor (pFF) of (68.3 ± 0.9)%. This paper demonstrates that LCP can be successfully applied to fabricate an active layer for polysilicon thin-film solar cells on glass. Further improvement in the Voc and the pFF may be possible by optimizing the post-LCP annealing and Hydrogenation Process, as well as using a poly-Si film of superior material quality.
