Indium Chloride

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Moreno Meneghetti - One of the best experts on this subject based on the ideXlab platform.

P P Sahay - One of the best experts on this subject based on the ideXlab platform.

  • influence of in doping on the structural optical and acetone sensing properties of zno nanoparticulate thin films
    Materials Science in Semiconductor Processing, 2013
    Co-Authors: C S Prajapati, P P Sahay
    Abstract:

    Abstract Indium-doped zinc oxide (ZnO) nanoparticle thin films were deposited on cleaned glass substrates by spray pyrolysis technique using zinc acetate dihydrate [Zn(CH3COO)2 2H2O] as a host precursor and Indium Chloride (InCl3) as a dopant precursor. X-ray diffraction results show that all films are polycrystalline zinc oxide having hexagonal wurtzite structure. Upon In doping, the films exhibit reduced crystallinity as compared with the undoped film. The optical studies reveal that the samples have an optical band gap in the range 3.23–3.27 eV. Unlike the undoped film, the In-doped films have been found to have the normal dispersion for the wavelength range 450–550 nm. Among all the films investigated, the 1 at% In-doped film shows the maximum response 96.8% to 100 ppm of acetone in air at the operating temperature of 300 °C. Even at a lower concentration of 25 ppm, the response to acetone in this film has been found to be more than 90% at 300 °C, which is attributed to the smaller crystallite size of the film, leading to sufficient adsorption of the atmospheric oxygen on the film surface at the operating temperature of 300 °C. Furthermore, In-doped films show the faster response and recovery at higher operating temperatures. A possible reaction mechanism of acetone sensing has been explained.

Danilo Dini - One of the best experts on this subject based on the ideXlab platform.

Maria De La Luz Olvera - One of the best experts on this subject based on the ideXlab platform.

  • Indium doped zinc oxide thin films deposited by ultrasonic chemical spray technique starting from zinc acetylacetonate and Indium Chloride
    Materials, 2014
    Co-Authors: R R Biswal, A Maldonado, J Vegaperez, Dwight Acosta, Maria De La Luz Olvera
    Abstract:

    The physical characteristics of ultrasonically sprayed Indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10-3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and Indium Chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both Indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for Indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the Indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Raghavachary Raghunathan - One of the best experts on this subject based on the ideXlab platform.