The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform

Kuang Yeu Hsieh - One of the best experts on this subject based on the ideXlab platform.

  • A low-cost, forming-free WOxReRAM using novel self-aligned photo-Induced Oxidation
    Technical Digest - International Electron Devices Meeting IEDM, 2013
    Co-Authors: Feng-min Lee, Dai Ying Lee, Han Hui Hsu, Ming Hsiu Lee, Erh Kun Lai, Wei Chih Chien, Hsiang Lan Lung, Yu-yu Lin, Chih-chieh Yu, Kuang Yeu Hsieh
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

  • A low-cost, forming-free WOx ReRAM using novel self-aligned photo-Induced Oxidation
    2013 IEEE International Electron Devices Meeting, 2013
    Co-Authors: Wei Chih Chien, Kuang Yeu Hsieh, Hsiang Lan Lung, Chih-chieh Yu, Chih-yuan Lu
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

Wei Chih Chien - One of the best experts on this subject based on the ideXlab platform.

  • A low-cost, forming-free WOxReRAM using novel self-aligned photo-Induced Oxidation
    Technical Digest - International Electron Devices Meeting IEDM, 2013
    Co-Authors: Feng-min Lee, Dai Ying Lee, Han Hui Hsu, Ming Hsiu Lee, Erh Kun Lai, Wei Chih Chien, Hsiang Lan Lung, Yu-yu Lin, Chih-chieh Yu, Kuang Yeu Hsieh
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

  • A low-cost, forming-free WOx ReRAM using novel self-aligned photo-Induced Oxidation
    2013 IEEE International Electron Devices Meeting, 2013
    Co-Authors: Wei Chih Chien, Kuang Yeu Hsieh, Hsiang Lan Lung, Chih-chieh Yu, Chih-yuan Lu
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

Eric Meggers - One of the best experts on this subject based on the ideXlab platform.

  • merger of visible light Induced Oxidation and enantioselective alkylation with a chiral iridium catalyst
    Chemistry: A European Journal, 2015
    Co-Authors: Chuanyong Wang, Yu Zheng, Philipp Rose, Lilu Zhang, Klaus Harms, Gerhard Hilt, Eric Meggers
    Abstract:

    A single chiral octahedral iridium(III) complex is used for visible light activated asymmetric photoredox catalysis. In the presence of a conventional household lamp and under an atmosphere of air, the oxidative coupling of 2-acyl-1-phenylimidazoles with N,N-diaryl-N-(trimethylsilyl)methylamines provides aminoalkylated products in 61–93 % yields with high enantiomeric excess (90–98 % ee). Notably, the iridium center simultaneously serves three distinct functions: as the exclusive source of chirality, as the catalytically active Lewis acid, and as a central part of the photoredox sensitizer. This conceptionally simple reaction Scheme may provide new avenues for the green synthesis of non-racemic chiral molecules.

Hsiang Lan Lung - One of the best experts on this subject based on the ideXlab platform.

  • A low-cost, forming-free WOxReRAM using novel self-aligned photo-Induced Oxidation
    Technical Digest - International Electron Devices Meeting IEDM, 2013
    Co-Authors: Feng-min Lee, Dai Ying Lee, Han Hui Hsu, Ming Hsiu Lee, Erh Kun Lai, Wei Chih Chien, Hsiang Lan Lung, Yu-yu Lin, Chih-chieh Yu, Kuang Yeu Hsieh
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

  • A low-cost, forming-free WOx ReRAM using novel self-aligned photo-Induced Oxidation
    2013 IEEE International Electron Devices Meeting, 2013
    Co-Authors: Wei Chih Chien, Kuang Yeu Hsieh, Hsiang Lan Lung, Chih-chieh Yu, Chih-yuan Lu
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

Chih-chieh Yu - One of the best experts on this subject based on the ideXlab platform.

  • A low-cost, forming-free WOxReRAM using novel self-aligned photo-Induced Oxidation
    Technical Digest - International Electron Devices Meeting IEDM, 2013
    Co-Authors: Feng-min Lee, Dai Ying Lee, Han Hui Hsu, Ming Hsiu Lee, Erh Kun Lai, Wei Chih Chien, Hsiang Lan Lung, Yu-yu Lin, Chih-chieh Yu, Kuang Yeu Hsieh
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.

  • A low-cost, forming-free WOx ReRAM using novel self-aligned photo-Induced Oxidation
    2013 IEEE International Electron Devices Meeting, 2013
    Co-Authors: Wei Chih Chien, Kuang Yeu Hsieh, Hsiang Lan Lung, Chih-chieh Yu, Chih-yuan Lu
    Abstract:

    A novel CMOS compatible photo Oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong Oxidation capability to form CMOS compatible WOx. The Oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.