The Experts below are selected from a list of 291 Experts worldwide ranked by ideXlab platform
Gianluca Coletti - One of the best experts on this subject based on the ideXlab platform.
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Impact of metal contamination in multicrystalline silicon solar cells: Case study for iron
2010 35th IEEE Photovoltaic Specialists Conference, 2010Co-Authors: Gianluca ColettiAbstract:The impact on solar cell performance of iron has been investigated. Iron has been intentionally added to silicon feedstock used to grow p-type directionally solidified multicrystalline silicon Ingots. A state of the art screen print solar cell process has been applied to wafers from the bottom to top of the Ingot. Adding 50 ppmwt of iron to silicon feedstock, results in comparable solar cell performances to reference uncontaminated material, in the range 40 to 70% of the Ingot height. Iron causes a reduction in the diffusion length, which decreases with the Ingot height.
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impact of iron nickel and chromium in feedstock on multicrystalline silicon solar cell properties
24th European Photovoltaic Solar Energy Conference and Exhibition Hamburg Germany 21-25 september 2009. 4 p., 2009Co-Authors: Gianluca Coletti, R Kvande, H Habenight, C Swanson, Carlos Knopf, Wilhelm Warta, Lars Arnberg, P C P BronsveldAbstract:The effect of metal contamination in multicrystalline silicon Ingots on solar cell performance is investigated. Metal impurities have been added to the silicon feedstock and the solar cell performance has been compared to a reference uncontaminated Ingot. A larger crystal defect density is observed in the top and in the bottom of the contaminated Ingots with respect to the reference. Adding 50 ppmw of iron or 40 ppmw of nickel or chromium to the silicon feedstock in p-type Ingots, the solar cell performances are comparable to the reference in the range of 40 to 70% Ingot height. Addition of Fe, Ni or Cr does not only have a direct impact on the diffusion length, but also on the crystal growth and shunting behaviour.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type Ingot, and about five times in the n-type Ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type Ingot and about four times for the n-type Ingot. The as-grown interstitial iron concentration in the p-type iron doped Ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Lars Arnberg, Gianluca Coletti, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline Ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type Ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated Ingot, it is almost constant throughout the Ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
N.f. Anoshkin - One of the best experts on this subject based on the ideXlab platform.
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Comparison of macrosegregation in titanium and aluminium alloy Ingots
Materials Science and Engineering: A, 1999Co-Authors: V.i. Dobatkin, N.f. AnoshkinAbstract:Abstract The existing information shows that positive zonal segregation appears in titanium alloy Ingots under the conditions of vacuum arc remelting. This segregation is characterized by enriching of central and upper Ingot zones with elements having partition coefficient values noticeably less than unity (Cu, Ni, Cr, Fe, Si, Mn). Negative segregation (enriching of peripheral zones) of such elements as Cu, Mg, Zn, Si also having partition coefficient less the unity develops in continuous casting of aluminium alloy Ingots. However, positive segregation also occurs in aluminium alloy Ingots during vacuum arc remelting or continuous casting accompanied by vigorous metal stirring in molten pool. Analysis of these data and the results of investigations concerning copper, magnesium, Ni superalloys and steel Ingots allowed one to validate the general model of zonal segregation. Values of the partition coefficient and solidification shrinkage, sizes of the transition region and the rate of metal movement in the molten pool are of prime importance. Various relationships of these parameters governs development of a type of macrosegregation (positive or negative) or production of a rather homogeneous Ingot.
Eivind Øvrelid - One of the best experts on this subject based on the ideXlab platform.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type Ingot, and about five times in the n-type Ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type Ingot and about four times for the n-type Ingot. The as-grown interstitial iron concentration in the p-type iron doped Ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Lars Arnberg, Gianluca Coletti, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline Ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type Ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated Ingot, it is almost constant throughout the Ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
R Kvande - One of the best experts on this subject based on the ideXlab platform.
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impact of iron nickel and chromium in feedstock on multicrystalline silicon solar cell properties
24th European Photovoltaic Solar Energy Conference and Exhibition Hamburg Germany 21-25 september 2009. 4 p., 2009Co-Authors: Gianluca Coletti, R Kvande, H Habenight, C Swanson, Carlos Knopf, Wilhelm Warta, Lars Arnberg, P C P BronsveldAbstract:The effect of metal contamination in multicrystalline silicon Ingots on solar cell performance is investigated. Metal impurities have been added to the silicon feedstock and the solar cell performance has been compared to a reference uncontaminated Ingot. A larger crystal defect density is observed in the top and in the bottom of the contaminated Ingots with respect to the reference. Adding 50 ppmw of iron or 40 ppmw of nickel or chromium to the silicon feedstock in p-type Ingots, the solar cell performances are comparable to the reference in the range of 40 to 70% Ingot height. Addition of Fe, Ni or Cr does not only have a direct impact on the diffusion length, but also on the crystal growth and shunting behaviour.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type Ingot, and about five times in the n-type Ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type Ingot and about four times for the n-type Ingot. The as-grown interstitial iron concentration in the p-type iron doped Ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Lars Arnberg, Gianluca Coletti, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline Ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type Ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated Ingot, it is almost constant throughout the Ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
Lars Arnberg - One of the best experts on this subject based on the ideXlab platform.
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chemical bulk properties of multicrystalline silicon Ingots for solar cells cast in silicon nitride crucibles
Journal of Crystal Growth, 2012Co-Authors: Chiara Modanese, M. Di Sabatino, Martin Syvertsen, Lars ArnbergAbstract:Silicon nitride is an alternative material to the widely used silica crucibles for directional solidification of mc-Si Ingots, its main advantages being the reusability in successive castings and elimination for a source for oxygen contamination of the Ingot. In this work, several Ingots were cast in these crucibles and compared to reference Ingots cast in silica crucibles. The thermal properties of the Si3N4 crucible differ from those of the SiO2 crucible and lead to a different thermal history during melting and casting. The oxygen contamination of the Ingot was observed to depend mainly on the melting and holding temperature, rather than on the crucible material. The lowest oxygen concentration was observed in the Ingots with the lowest melting temperature. However, the thermal properties of the Si3N4 crucible influence the oxygen profile along Ingot height, with a faster decrease in the concentration with increasing Ingot height. This is believed to be due to a different mechanism for oxygen transport compared to that of the silica crucibles. The concentration of dopants in the Ingots showed that contamination from the Si3N4 crucible occurred, probably due to diffusion of B- and P-oxides into the Si melt.
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impact of iron nickel and chromium in feedstock on multicrystalline silicon solar cell properties
24th European Photovoltaic Solar Energy Conference and Exhibition Hamburg Germany 21-25 september 2009. 4 p., 2009Co-Authors: Gianluca Coletti, R Kvande, H Habenight, C Swanson, Carlos Knopf, Wilhelm Warta, Lars Arnberg, P C P BronsveldAbstract:The effect of metal contamination in multicrystalline silicon Ingots on solar cell performance is investigated. Metal impurities have been added to the silicon feedstock and the solar cell performance has been compared to a reference uncontaminated Ingot. A larger crystal defect density is observed in the top and in the bottom of the contaminated Ingots with respect to the reference. Adding 50 ppmw of iron or 40 ppmw of nickel or chromium to the silicon feedstock in p-type Ingots, the solar cell performances are comparable to the reference in the range of 40 to 70% Ingot height. Addition of Fe, Ni or Cr does not only have a direct impact on the diffusion length, but also on the crystal growth and shunting behaviour.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type Ingot, and about five times in the n-type Ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type Ingot and about four times for the n-type Ingot. The as-grown interstitial iron concentration in the p-type iron doped Ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Lars Arnberg, Gianluca Coletti, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline Ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type Ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated Ingot, it is almost constant throughout the Ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
