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Gianluca Coletti - One of the best experts on this subject based on the ideXlab platform.
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impact of iron nickel and chromium in feedstock on multicrystalline silicon solar cell properties
24th European Photovoltaic Solar Energy Conference and Exhibition Hamburg Germany 21-25 september 2009. 4 p., 2009Co-Authors: Gianluca Coletti, R Kvande, H Habenight, C Swanson, Carlos Knopf, Wilhelm Warta, Lars Arnberg, P C P BronsveldAbstract:The effect of metal contamination in multicrystalline silicon Ingots on solar cell performance is investigated. Metal impurities have been added to the silicon feedstock and the solar cell performance has been compared to a reference uncontaminated ingot. A larger crystal defect density is observed in the top and in the bottom of the contaminated Ingots with respect to the reference. Adding 50 ppmw of iron or 40 ppmw of nickel or chromium to the silicon feedstock in p-type Ingots, the solar cell performances are comparable to the reference in the range of 40 to 70% ingot height. Addition of Fe, Ni or Cr does not only have a direct impact on the diffusion length, but also on the crystal growth and shunting behaviour.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type ingot, and about five times in the n-type ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type ingot and about four times for the n-type ingot. The as-grown interstitial iron concentration in the p-type iron doped ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Gianluca Coletti, Lars Arnberg, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated ingot, it is almost constant throughout the ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
Eivind Øvrelid - One of the best experts on this subject based on the ideXlab platform.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type ingot, and about five times in the n-type ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type ingot and about four times for the n-type ingot. The as-grown interstitial iron concentration in the p-type iron doped ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Gianluca Coletti, Lars Arnberg, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated ingot, it is almost constant throughout the ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
R Kvande - One of the best experts on this subject based on the ideXlab platform.
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impact of iron nickel and chromium in feedstock on multicrystalline silicon solar cell properties
24th European Photovoltaic Solar Energy Conference and Exhibition Hamburg Germany 21-25 september 2009. 4 p., 2009Co-Authors: Gianluca Coletti, R Kvande, H Habenight, C Swanson, Carlos Knopf, Wilhelm Warta, Lars Arnberg, P C P BronsveldAbstract:The effect of metal contamination in multicrystalline silicon Ingots on solar cell performance is investigated. Metal impurities have been added to the silicon feedstock and the solar cell performance has been compared to a reference uncontaminated ingot. A larger crystal defect density is observed in the top and in the bottom of the contaminated Ingots with respect to the reference. Adding 50 ppmw of iron or 40 ppmw of nickel or chromium to the silicon feedstock in p-type Ingots, the solar cell performances are comparable to the reference in the range of 40 to 70% ingot height. Addition of Fe, Ni or Cr does not only have a direct impact on the diffusion length, but also on the crystal growth and shunting behaviour.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type ingot, and about five times in the n-type ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type ingot and about four times for the n-type ingot. The as-grown interstitial iron concentration in the p-type iron doped ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Gianluca Coletti, Lars Arnberg, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated ingot, it is almost constant throughout the ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
Lars Arnberg - One of the best experts on this subject based on the ideXlab platform.
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chemical bulk properties of multicrystalline silicon Ingots for solar cells cast in silicon nitride crucibles
Journal of Crystal Growth, 2012Co-Authors: Chiara Modanese, M. Di Sabatino, Martin Syvertsen, Lars ArnbergAbstract:Silicon nitride is an alternative material to the widely used silica crucibles for directional solidification of mc-Si Ingots, its main advantages being the reusability in successive castings and elimination for a source for oxygen contamination of the ingot. In this work, several Ingots were cast in these crucibles and compared to reference Ingots cast in silica crucibles. The thermal properties of the Si3N4 crucible differ from those of the SiO2 crucible and lead to a different thermal history during melting and casting. The oxygen contamination of the ingot was observed to depend mainly on the melting and holding temperature, rather than on the crucible material. The lowest oxygen concentration was observed in the Ingots with the lowest melting temperature. However, the thermal properties of the Si3N4 crucible influence the oxygen profile along ingot height, with a faster decrease in the concentration with increasing ingot height. This is believed to be due to a different mechanism for oxygen transport compared to that of the silica crucibles. The concentration of dopants in the Ingots showed that contamination from the Si3N4 crucible occurred, probably due to diffusion of B- and P-oxides into the Si melt.
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impact of iron nickel and chromium in feedstock on multicrystalline silicon solar cell properties
24th European Photovoltaic Solar Energy Conference and Exhibition Hamburg Germany 21-25 september 2009. 4 p., 2009Co-Authors: Gianluca Coletti, R Kvande, H Habenight, C Swanson, Carlos Knopf, Wilhelm Warta, Lars Arnberg, P C P BronsveldAbstract:The effect of metal contamination in multicrystalline silicon Ingots on solar cell performance is investigated. Metal impurities have been added to the silicon feedstock and the solar cell performance has been compared to a reference uncontaminated ingot. A larger crystal defect density is observed in the top and in the bottom of the contaminated Ingots with respect to the reference. Adding 50 ppmw of iron or 40 ppmw of nickel or chromium to the silicon feedstock in p-type Ingots, the solar cell performances are comparable to the reference in the range of 40 to 70% ingot height. Addition of Fe, Ni or Cr does not only have a direct impact on the diffusion length, but also on the crystal growth and shunting behaviour.
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Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells
Journal of Applied Physics, 2008Co-Authors: Gianluca Coletti, R Kvande, Lars Arnberg, V. D. Mihailetchi, L. J. Geerligs, Eivind ØvrelidAbstract:The effect of iron contamination in multicrystalline silicon Ingots for solar cells has been investigated. Intentionally contaminated p- and n-type multicrystalline silicon Ingots were grown by adding 53 ppm by weight of iron in the silicon feedstock. They are compared to reference Ingots produced from nonintentionally contaminated silicon feedstock. p-type and n-type solar cell processes were applied to wafers sliced from these Ingots. The as-grown minority carrier lifetime in the iron doped Ingots is about 1–2 and 6–20 μs for p and n types, respectively. After phosphorus diffusion and hydrogenation this lifetime is improved up to 50 times in the p-type ingot, and about five times in the n-type ingot. After boron/phosphorus codiffusion and hydrogenation the improvement is about ten times for the p-type ingot and about four times for the n-type ingot. The as-grown interstitial iron concentration in the p-type iron doped ingot is on the order of 1013 cm−3, representing about 10% of the total iron concentra...
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Distribution of iron in multicrystalline silicon Ingots
Journal of Applied Physics, 2008Co-Authors: R Kvande, Gianluca Coletti, Lars Arnberg, M. Di Sabatino, Eivind Øvrelid, L. J. Geerligs, C. C. SwansonAbstract:The distribution of iron in multicrystalline silicon Ingots for solar cells has been studied. A p- and a n-type multicrystalline ingot were intentionally contaminated by adding 53ppmwt (μg∕g) of iron to the silicon feedstock and compared to a reference p-type ingot produced from ultrapure silicon feedstock. The vertical total iron distribution was determined by neutron activation analysis and glow discharge mass spectrometry. For the intentionally Fe-contaminated Ingots, the distribution can be described by Scheil’s equation with an effective distribution coefficient of 2×10−5. The interstitial iron concentration was measured in the p-type Ingots. In the Fe-contaminated ingot, it is almost constant throughout the ingot and constitutes about 50% of the total concentration, which is in conflict with the previous studies. Gettering had a large impact on the interstitial iron levels by reducing the concentration by two orders of magnitude. Considerable trapping was observed at crystal defects on as-cut wafers...
Lijun Liu - One of the best experts on this subject based on the ideXlab platform.
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improved seeded directional solidification process for producing high efficiency multi crystalline silicon Ingots for solar cells
Solar Energy Materials and Solar Cells, 2014Co-Authors: Wenhan Zhao, Xueqin Liang, Jun Zhang, Lijun LiuAbstract:Abstract We proposed an improved process design for the industrial mc-Si seeded directional solidification process to produce high-quality multi-crystalline silicon Ingots for high-efficiency solar cells. A transient global model of heat transfer was employed to investigate the effects of the process design parameters on the melt–crystal interface shape, thermal field, and thermal stress distribution in the solidified silicon ingot during the solidification process. Ingot casting experiments were carried out and the solar cell performance was measured. The results show that the melt–crystal interface shape in the improved process design remains convex during almost the whole solidification process, and the thermal stress level at the bottom of the solidified Ingots is significantly lower than in the original process design. Based on the experimental results, the quality of grown silicon Ingots and the conversion efficiency of solar cells were analyzed. The shadow region present in the silicon ingot produced with the original process design disappears and the morphology of the ingot is improved with a more homogeneous distribution of grain orientation using the improved process design. The average yield rate of the solidified silicon ingot is 8.18% higher with the improved process design. The average conversion efficiency of solar cells is higher with the improved process design (17.59%) than with the original process design (17.48%).
