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Michel Papuchon - One of the best experts on this subject based on the ideXlab platform.

Jan Schmidt - One of the best experts on this subject based on the ideXlab platform.

  • advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers
    Journal of Applied Physics, 2012
    Co-Authors: Ganesh G Samudra, Jan Schmidt, Armin G. Aberle, Florian Werner, Marius Peters, Bram Hoex
    Abstract:

    A strong Injection Level dependence of the effective minority carrier lifetime (τeff) is typically measured at low Injection Levels for undiffused crystalline silicon (c-Si) wafers symmetrically passivated by a highly charged dielectric film. However, this phenomenon is not yet well understood. In this work, we concentrate on two of those possible physical mechanisms to reproduce measured τeff data of c-Si wafers symmetrically passivated by atomic layer deposited Al2O3. The first assumes the existence of a defective region close to the c-Si surface. The second assumes asymmetric electron and hole lifetimes in the bulk. Both explanations result in an adequate reproduction of the Injection dependent τeff found for both n- and p-type c-Si wafers. However, modeling also predicts a distinctly different Injection dependence of τeff for the two suggested mechanisms if the polarity of the effective surface charge is inverted. We test this prediction by experimentally inverting the polarity of the effective surfac...

  • high rate atomic layer deposition of al2o3 for the surface passivation of si solar cells
    Energy Procedia, 2011
    Co-Authors: Florian Werner, Walter Stals, Roger Gortzen, Boris Veith, Rolf Brendel, Jan Schmidt
    Abstract:

    Abstract High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6 × 15.6 cm2 silicon wafers of 10 nm thick Al2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of Injection Level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8 × 1010 eV 1 cm 2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells.

  • electronic properties of iron boron pairs in crystalline silicon by temperature and Injection Level dependent lifetime measurements
    Journal of Applied Physics, 2005
    Co-Authors: Jens E Birkholz, Daniel Macdonald, Karsten Bothe, Jan Schmidt
    Abstract:

    Iron-boron pairs in crystalline silicon are studied by measuring the recombination lifetime as a function of Injection density, doping concentration, and temperature. The characteristic crossover point of the Injection-Level-dependent carrier lifetime curves measured before and after optical dissociation of the iron-boron pairs is analyzed to determine the energy Level as well as the electronand hole-capture cross sections of the acceptor Level of iron-boron pairs, assuming known recombination parameters for interstitial iron. The doping concentration dependence of the crossover point gives an electron-capture cross section of s1.4± 0.2 d 3 10 ˛14 cm 2 , while the temperature dependence results in a hole-capture cross section in the range from 0.5 3 10 ˛15 to 2.5 3 10 ˛15 cm 2 and an energy Level of s0.26± 0.02 d eV below the conduction-band edge. © 2005 American Institute of Physics . fDOI: 10.1063/1.1897489g

  • Injection Level dependence of the defect related carrier lifetime in light degraded boron doped czochralski silicon
    Applied Physics Letters, 1998
    Co-Authors: Jan Schmidt, Christopher Berge, Armin G. Aberle
    Abstract:

    The carrier recombination lifetime in light-degraded boron-doped 1 Ω cm Czochralski-grown silicon wafers is measured as a function of the bulk excess carrier concentration Δn. The measurements are performed with the quasi-steady state photoconductance method and cover a large Injection Level range between 1013 and 1.5×1017 cm−3. We observe a very strong increase of the carrier lifetime in the Δn range between 1014 and 2×1016 cm−3, which is attributed to boron–oxygen (BiOi) defect pairs. The observed strong increase of the defect-related carrier lifetime allows us to determine the previously unknown hole capture cross section σp of the BiOi pair. Our analysis gives a σp value of (0.45–1.2)×10−15 cm2, which is 2–3 orders of magnitude smaller than the corresponding electron capture cross section.

  • record low surface recombination velocities on 1 ω cm p silicon using remote plasma silicon nitride passivation
    Applied Physics Letters, 1996
    Co-Authors: Thomas Lauinger, Jan Schmidt, Armin G. Aberle, Rudolf Hezel
    Abstract:

    Outstanding surface passivation of low‐resistivity single‐crystalline p‐silicon is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasma‐enhanced chemical vapor deposition system. The effective surface recombination velocity Seff is determined as a function of the bulk Injection Level from light‐biased photoconductance decay measurements. On polished as well as chemically textured silicon wafers we find that our remote plasma silicon nitride provides better surface passivation than the best high‐temperature thermal oxides ever reported. For polished 1.5 and 0.7 Ω cm p‐silicon wafers, record low Seff values of 4 and 20 cm/s, respectively, are presented.

Armin G. Aberle - One of the best experts on this subject based on the ideXlab platform.

  • advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers
    Journal of Applied Physics, 2012
    Co-Authors: Ganesh G Samudra, Jan Schmidt, Armin G. Aberle, Florian Werner, Marius Peters, Bram Hoex
    Abstract:

    A strong Injection Level dependence of the effective minority carrier lifetime (τeff) is typically measured at low Injection Levels for undiffused crystalline silicon (c-Si) wafers symmetrically passivated by a highly charged dielectric film. However, this phenomenon is not yet well understood. In this work, we concentrate on two of those possible physical mechanisms to reproduce measured τeff data of c-Si wafers symmetrically passivated by atomic layer deposited Al2O3. The first assumes the existence of a defective region close to the c-Si surface. The second assumes asymmetric electron and hole lifetimes in the bulk. Both explanations result in an adequate reproduction of the Injection dependent τeff found for both n- and p-type c-Si wafers. However, modeling also predicts a distinctly different Injection dependence of τeff for the two suggested mechanisms if the polarity of the effective surface charge is inverted. We test this prediction by experimentally inverting the polarity of the effective surfac...

  • Injection Level dependence of the defect related carrier lifetime in light degraded boron doped czochralski silicon
    Applied Physics Letters, 1998
    Co-Authors: Jan Schmidt, Christopher Berge, Armin G. Aberle
    Abstract:

    The carrier recombination lifetime in light-degraded boron-doped 1 Ω cm Czochralski-grown silicon wafers is measured as a function of the bulk excess carrier concentration Δn. The measurements are performed with the quasi-steady state photoconductance method and cover a large Injection Level range between 1013 and 1.5×1017 cm−3. We observe a very strong increase of the carrier lifetime in the Δn range between 1014 and 2×1016 cm−3, which is attributed to boron–oxygen (BiOi) defect pairs. The observed strong increase of the defect-related carrier lifetime allows us to determine the previously unknown hole capture cross section σp of the BiOi pair. Our analysis gives a σp value of (0.45–1.2)×10−15 cm2, which is 2–3 orders of magnitude smaller than the corresponding electron capture cross section.

  • record low surface recombination velocities on 1 ω cm p silicon using remote plasma silicon nitride passivation
    Applied Physics Letters, 1996
    Co-Authors: Thomas Lauinger, Jan Schmidt, Armin G. Aberle, Rudolf Hezel
    Abstract:

    Outstanding surface passivation of low‐resistivity single‐crystalline p‐silicon is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasma‐enhanced chemical vapor deposition system. The effective surface recombination velocity Seff is determined as a function of the bulk Injection Level from light‐biased photoconductance decay measurements. On polished as well as chemically textured silicon wafers we find that our remote plasma silicon nitride provides better surface passivation than the best high‐temperature thermal oxides ever reported. For polished 1.5 and 0.7 Ω cm p‐silicon wafers, record low Seff values of 4 and 20 cm/s, respectively, are presented.

  • Injection Level dependent surface recombination velocities at the silicon plasma silicon nitride interface
    Applied Physics Letters, 1995
    Co-Authors: Armin G. Aberle, Thomas Lauinger, Jan Schmidt, Rudolf Hezel
    Abstract:

    Experimental evidence is presented that the effective surface recombination velocity (Seff) at p‐silicon surfaces passivated by silicon nitride films (fabricated in a plasma‐enhanced chemical vapor deposition system) shows an Injection‐Level dependence similar to the behavior of thermally oxidized silicon surfaces. Using the microwave‐detected photoconductance decay method, Injection‐Level dependent Seff measurements were taken on nitride‐passivated p‐silicon wafers of different resistivities (1.5–3000 Ω cm). The obtained Seff values also show that for low‐resistivity substrates (≤2 Ω cm), nitride passivation is as effective as conventional oxide passivation (and even superior at low Injection Levels) and furthermore offers the advantage of a less pronounced Injection‐Level dependence.

  • surface recombination velocity measurements at the silicon silicon dioxide interface by microwave detected photoconductance decay
    Journal of Applied Physics, 1994
    Co-Authors: A W Stephens, Armin G. Aberle, Martin A Green
    Abstract:

    This article presents measurements of the effective surface recombination velocity Seff at the Si–SiO2 interface of thermally oxidized p‐type silicon wafers as a function of carrier Injection Level. The experiments cover a large range of Injection Levels and substrate resistivities, using the ‘‘microwave‐detected photoconductance decay’’ method. A minimum in Seff has been observed experimentally. The experimental results for Seff are compared with calculations based on an extended Shockley–Read–Hall formalism which includes surface band bending effects due to oxide charges.

Yann Boucher - One of the best experts on this subject based on the ideXlab platform.

Rudolf Hezel - One of the best experts on this subject based on the ideXlab platform.

  • record low surface recombination velocities on 1 ω cm p silicon using remote plasma silicon nitride passivation
    Applied Physics Letters, 1996
    Co-Authors: Thomas Lauinger, Jan Schmidt, Armin G. Aberle, Rudolf Hezel
    Abstract:

    Outstanding surface passivation of low‐resistivity single‐crystalline p‐silicon is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasma‐enhanced chemical vapor deposition system. The effective surface recombination velocity Seff is determined as a function of the bulk Injection Level from light‐biased photoconductance decay measurements. On polished as well as chemically textured silicon wafers we find that our remote plasma silicon nitride provides better surface passivation than the best high‐temperature thermal oxides ever reported. For polished 1.5 and 0.7 Ω cm p‐silicon wafers, record low Seff values of 4 and 20 cm/s, respectively, are presented.

  • Injection Level dependent surface recombination velocities at the silicon plasma silicon nitride interface
    Applied Physics Letters, 1995
    Co-Authors: Armin G. Aberle, Thomas Lauinger, Jan Schmidt, Rudolf Hezel
    Abstract:

    Experimental evidence is presented that the effective surface recombination velocity (Seff) at p‐silicon surfaces passivated by silicon nitride films (fabricated in a plasma‐enhanced chemical vapor deposition system) shows an Injection‐Level dependence similar to the behavior of thermally oxidized silicon surfaces. Using the microwave‐detected photoconductance decay method, Injection‐Level dependent Seff measurements were taken on nitride‐passivated p‐silicon wafers of different resistivities (1.5–3000 Ω cm). The obtained Seff values also show that for low‐resistivity substrates (≤2 Ω cm), nitride passivation is as effective as conventional oxide passivation (and even superior at low Injection Levels) and furthermore offers the advantage of a less pronounced Injection‐Level dependence.