The Experts below are selected from a list of 11634 Experts worldwide ranked by ideXlab platform
G Walter - One of the best experts on this subject based on the ideXlab platform.
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signal mixing in a multiple Input Transistor laser near threshold
Applied Physics Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:A single-emitter multiple-Input Transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the Transistor I-V characteristics (β≡ΔIC∕ΔIB, βspon>βstim), Input signals f1=2GHz and f2=2.1GHz are converted into mf1±nf2 ranging from 0.1to8.4GHz. Stimulated emission (enhanced recombination) changes the Transistor into a special form of nonlinear element, a special form of electronic processor or “switch.”
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High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a Transistor laser
IEEE Photonics Technology Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:This letter reports the common-emitter operation (gain beta=DeltaIC/DeltaIB>1, 20degC, IB =36 mA, lambda=970 nm) of a dual-Input Transistor laser, arranged with a separate base contact on either side of a single emitter, that adds, mixes, and processes high-speed square-wave electrical Inputs and delivers separate electrical and optical outputs. Applying a square-wave electrical Input X1(t) to one base contact and X2(t) at a second base Input, we obtain, with the pulsewidth modulated because of mixing, an electrical output proportional to betatimes[X1(t)+X2(t)] and a laser output tracking the electrical output (hnutimesf[X1(t)+X2(t)]) and exceeding it in bandwidth (pulse sharpness)
Milton Feng - One of the best experts on this subject based on the ideXlab platform.
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signal mixing in a multiple Input Transistor laser near threshold
Applied Physics Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:A single-emitter multiple-Input Transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the Transistor I-V characteristics (β≡ΔIC∕ΔIB, βspon>βstim), Input signals f1=2GHz and f2=2.1GHz are converted into mf1±nf2 ranging from 0.1to8.4GHz. Stimulated emission (enhanced recombination) changes the Transistor into a special form of nonlinear element, a special form of electronic processor or “switch.”
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High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a Transistor laser
IEEE Photonics Technology Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:This letter reports the common-emitter operation (gain beta=DeltaIC/DeltaIB>1, 20degC, IB =36 mA, lambda=970 nm) of a dual-Input Transistor laser, arranged with a separate base contact on either side of a single emitter, that adds, mixes, and processes high-speed square-wave electrical Inputs and delivers separate electrical and optical outputs. Applying a square-wave electrical Input X1(t) to one base contact and X2(t) at a second base Input, we obtain, with the pulsewidth modulated because of mixing, an electrical output proportional to betatimes[X1(t)+X2(t)] and a laser output tracking the electrical output (hnutimesf[X1(t)+X2(t)]) and exceeding it in bandwidth (pulse sharpness)
Werner Buttler - One of the best experts on this subject based on the ideXlab platform.
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thermal imaging camera with linear pb1 xsnxse on si infrared sensor array and combined jfet cmos read out electronics
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 1996Co-Authors: J. Masek, A. Fach, J. John, P. Müller, Carmine Paglino, Hans Zogg, Werner ButtlerAbstract:A thermal imaging camera for the 8–12 μm wavelength range is described which employs a new infrared sensor device and read-out principle. A bilinear 2 × 128 element infrared sensor array is fabricated in a narrow gap Pb1−xSnxSe layer grown epitaxially on a Si-substrate. A ≈ 30 A thick intermediate epitaxial CaF2 buffer layer is used for compatibility reasons. The read-out electronics chips contain, for each sensor, an integrator with a low noise JFET Input Transistor, correlated multiple sampling, and a sample and hold amplifier. They are wire-bonded to the sensor array and operated at 80–120 K. The JFET Input Transistors allow to amplify from much lower source impedances (down to <10 kΩ) than with CMOS design without adding significant noise. Therefore, infrared sensors with lower impedances can be used, which allows operation at higher temperature, or to use sensors with longer cut-off wavelengths.
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THERMAL IMAGING CAMERA WITH LINEAR PB1-XSNXSE-ON-SI INFRARED SENSOR ARRAY AND COMBINED JFET/CMOS READ-OUT ELECTRONICS
Nuclear Instruments and Methods in Physics Research Section A: Accelerators Spectrometers Detectors and Associated Equipment, 1996Co-Authors: J. Masek, A. Fach, J. John, P. Müller, Carmine Paglino, Hans Zogg, Werner ButtlerAbstract:A thermal imaging camera for the 8–12 μm wavelength range is described which employs a new infrared sensor device and read-out principle. A bilinear 2 × 128 element infrared sensor array is fabricated in a narrow gap Pb1−xSnxSe layer grown epitaxially on a Si-substrate. A ≈ 30 A thick intermediate epitaxial CaF2 buffer layer is used for compatibility reasons. The read-out electronics chips contain, for each sensor, an integrator with a low noise JFET Input Transistor, correlated multiple sampling, and a sample and hold amplifier. They are wire-bonded to the sensor array and operated at 80–120 K. The JFET Input Transistors allow to amplify from much lower source impedances (down to
A James - One of the best experts on this subject based on the ideXlab platform.
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signal mixing in a multiple Input Transistor laser near threshold
Applied Physics Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:A single-emitter multiple-Input Transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the Transistor I-V characteristics (β≡ΔIC∕ΔIB, βspon>βstim), Input signals f1=2GHz and f2=2.1GHz are converted into mf1±nf2 ranging from 0.1to8.4GHz. Stimulated emission (enhanced recombination) changes the Transistor into a special form of nonlinear element, a special form of electronic processor or “switch.”
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High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a Transistor laser
IEEE Photonics Technology Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:This letter reports the common-emitter operation (gain beta=DeltaIC/DeltaIB>1, 20degC, IB =36 mA, lambda=970 nm) of a dual-Input Transistor laser, arranged with a separate base contact on either side of a single emitter, that adds, mixes, and processes high-speed square-wave electrical Inputs and delivers separate electrical and optical outputs. Applying a square-wave electrical Input X1(t) to one base contact and X2(t) at a second base Input, we obtain, with the pulsewidth modulated because of mixing, an electrical output proportional to betatimes[X1(t)+X2(t)] and a laser output tracking the electrical output (hnutimesf[X1(t)+X2(t)]) and exceeding it in bandwidth (pulse sharpness)
R Chan - One of the best experts on this subject based on the ideXlab platform.
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signal mixing in a multiple Input Transistor laser near threshold
Applied Physics Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:A single-emitter multiple-Input Transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the Transistor I-V characteristics (β≡ΔIC∕ΔIB, βspon>βstim), Input signals f1=2GHz and f2=2.1GHz are converted into mf1±nf2 ranging from 0.1to8.4GHz. Stimulated emission (enhanced recombination) changes the Transistor into a special form of nonlinear element, a special form of electronic processor or “switch.”
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High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a Transistor laser
IEEE Photonics Technology Letters, 2006Co-Authors: Milton Feng, N Holonyak, R Chan, A James, G WalterAbstract:This letter reports the common-emitter operation (gain beta=DeltaIC/DeltaIB>1, 20degC, IB =36 mA, lambda=970 nm) of a dual-Input Transistor laser, arranged with a separate base contact on either side of a single emitter, that adds, mixes, and processes high-speed square-wave electrical Inputs and delivers separate electrical and optical outputs. Applying a square-wave electrical Input X1(t) to one base contact and X2(t) at a second base Input, we obtain, with the pulsewidth modulated because of mixing, an electrical output proportional to betatimes[X1(t)+X2(t)] and a laser output tracking the electrical output (hnutimesf[X1(t)+X2(t)]) and exceeding it in bandwidth (pulse sharpness)