The Experts below are selected from a list of 201624 Experts worldwide ranked by ideXlab platform
Yadong Xu - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
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effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
Shouzhi Xi - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
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effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
Tao Wang - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
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effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
Lingyan Xu - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te Interface Layer on the potential barrier height of CdTe/GaAs heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
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effects of ga te Interface Layer on the potential barrier height of cdte gaas heteroInterface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The Interface Layer has great significance on the potential barrier height of the CdTe/GaAs heteroInterface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te Interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe Interface dipole Layer (more than 30 A) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te Interface Layer. These results provide a more fundamental understanding of the influencing mechanism of the Interface Layer on the potential barrier height of the CdTe/GaAs heteroInterface.
Ming-ming Huo - One of the best experts on this subject based on the ideXlab platform.
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Effect of colloid aggregation characteristic on ZnO Interface Layer and photovoltaic performance of polymer solar cells
Organic Electronics, 2020Co-Authors: Chang Zhou, Yurong Liu, Ming-ming HuoAbstract:Abstract ZnO as a classical n-type semiconductor oxide is widely used as the electron transport Layer for high-efficiency polymer solar cells by using solution processing. To study the effect of ZnO colloid aggregation size on the morphology of ZnO Interface Layer and photovoltaic performance of polymer solar cells. The ZnO colloid aggregation size was adjusted by aging time, and the PTB7-Th:PC71BM solar cells with various ZnO Interface Layers were fabricated. The results showed that morphology, structure and property of ZnO Interface Layer were depended on the ZnO colloid particle size, and then determined the photoelectric performance of the PTB7-Th:PC71BM solar cell. The best performance of PTB7-Th:PC71BM solar cell with 10.21% was obtained when the ZnO precursor solution was set at 2 h aging. The ZnO Interface Layer with good morphology and appropriate energy level improved the mobility and lifetime of charge carrier. Moreover, it also attributed good Interface contact between the ZnO Layer and the PTB7-Th:PC71BM active Layer, which enhanced the electron transfer and reduced the charge recombination at the Interface.
