The Experts below are selected from a list of 63573 Experts worldwide ranked by ideXlab platform
Yadong Xu - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te interface layer on the Potential Barrier height of cdte gaas heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The interface layer has great significance on the Potential Barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 A) was formed, which reduced the Potential Barrier height by 0.38 eV. The Potential Barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the Potential Barrier height of the CdTe/GaAs heterointerface.
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effects of ga te interface layer on the Potential Barrier height of cdte gaas heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The interface layer has great significance on the Potential Barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 A) was formed, which reduced the Potential Barrier height by 0.38 eV. The Potential Barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the Potential Barrier height of the CdTe/GaAs heterointerface.
Ivo A. Hümmelgen - One of the best experts on this subject based on the ideXlab platform.
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temperature dependent tunnelling current at metal polymer interfaces Potential Barrier height determination
Applied Physics Letters, 1997Co-Authors: M. Koehler, Ivo A. HümmelgenAbstract:It has been demonstrated that the expression for the temperature dependent tunneling current through a triangular Potential Barrier at metal/polymer interfaces fits experimental data including the deviation from a straight line observed in Fowler–Nordheim plots. The fitting parameters can be used to calculate the Potential Barrier height at the metal/polymer interface, which is of crucial importance for the control of charge injection in organic light emitting diodes. The tunneling current density expression reproduces the observed dependence of the current with temperature.
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Temperature dependent tunnelling current at metal/polymer interfaces—Potential Barrier height determination
Applied Physics Letters, 1997Co-Authors: M. Koehler, Ivo A. HümmelgenAbstract:It has been demonstrated that the expression for the temperature dependent tunneling current through a triangular Potential Barrier at metal/polymer interfaces fits experimental data including the deviation from a straight line observed in Fowler–Nordheim plots. The fitting parameters can be used to calculate the Potential Barrier height at the metal/polymer interface, which is of crucial importance for the control of charge injection in organic light emitting diodes. The tunneling current density expression reproduces the observed dependence of the current with temperature.
Shouzhi Xi - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te interface layer on the Potential Barrier height of cdte gaas heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The interface layer has great significance on the Potential Barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 A) was formed, which reduced the Potential Barrier height by 0.38 eV. The Potential Barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the Potential Barrier height of the CdTe/GaAs heterointerface.
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effects of ga te interface layer on the Potential Barrier height of cdte gaas heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The interface layer has great significance on the Potential Barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 A) was formed, which reduced the Potential Barrier height by 0.38 eV. The Potential Barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the Potential Barrier height of the CdTe/GaAs heterointerface.
M. Koehler - One of the best experts on this subject based on the ideXlab platform.
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temperature dependent tunnelling current at metal polymer interfaces Potential Barrier height determination
Applied Physics Letters, 1997Co-Authors: M. Koehler, Ivo A. HümmelgenAbstract:It has been demonstrated that the expression for the temperature dependent tunneling current through a triangular Potential Barrier at metal/polymer interfaces fits experimental data including the deviation from a straight line observed in Fowler–Nordheim plots. The fitting parameters can be used to calculate the Potential Barrier height at the metal/polymer interface, which is of crucial importance for the control of charge injection in organic light emitting diodes. The tunneling current density expression reproduces the observed dependence of the current with temperature.
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Temperature dependent tunnelling current at metal/polymer interfaces—Potential Barrier height determination
Applied Physics Letters, 1997Co-Authors: M. Koehler, Ivo A. HümmelgenAbstract:It has been demonstrated that the expression for the temperature dependent tunneling current through a triangular Potential Barrier at metal/polymer interfaces fits experimental data including the deviation from a straight line observed in Fowler–Nordheim plots. The fitting parameters can be used to calculate the Potential Barrier height at the metal/polymer interface, which is of crucial importance for the control of charge injection in organic light emitting diodes. The tunneling current density expression reproduces the observed dependence of the current with temperature.
Tao Wang - One of the best experts on this subject based on the ideXlab platform.
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Correction: Effects of Ga-Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface.
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:Correction for ‘Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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correction effects of ga te interface layer on the Potential Barrier height of cdte gaas heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:Correction for ‘Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
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Effects of Ga–Te interface layer on the Potential Barrier height of CdTe/GaAs heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Shouzhi Xi, Yanyan Yuan, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao Wang, Jie SuAbstract:The interface layer has great significance on the Potential Barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 A) was formed, which reduced the Potential Barrier height by 0.38 eV. The Potential Barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the Potential Barrier height of the CdTe/GaAs heterointerface.
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effects of ga te interface layer on the Potential Barrier height of cdte gaas heterointerface
Physical Chemistry Chemical Physics, 2016Co-Authors: Yanyan Yuan, Shouzhi Xi, Lingyan Xu, Yadong Xu, Wenhua Zhang, Tao WangAbstract:The interface layer has great significance on the Potential Barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 A. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 A) was formed, which reduced the Potential Barrier height by 0.38 eV. The Potential Barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the Potential Barrier height of the CdTe/GaAs heterointerface.
