The Experts below are selected from a list of 16578 Experts worldwide ranked by ideXlab platform
Yong-hang Zhang - One of the best experts on this subject based on the ideXlab platform.
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Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe HeteroInterface
IEEE Journal of Photovoltaics, 2017Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Zhao Yuan, Maxwell B. Lassise, Yong-hang ZhangAbstract:The Interface Recombination velocity (IRV) at the Interfaces in CdTe/Mg x Cd ${}_{1\hbox{-}}$ x Te double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mg x Cd ${}_{1\hbox{-}}$ x Te barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced Interface Recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the Recombination at the DH Interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μ s achieved in the DHs.
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Ultralow Interface Recombination velocity (∼1 cm/s) in CdTe/Mg x Cd 1−x Te double-heterostructures
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:CdTe/Mg x Cd 1−x Te double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low Interface Recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by Mg x Cd 1−x Te. However, both thermionic emission and tunneling effects can cause carrier loss over or through the Mg x Cd 1−x Te barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to Recombination through Interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced Interface Recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.
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carrier lifetimes and Interface Recombination velocities in cdte mgxcd1 xte double heterostructures with different mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Carrier lifetimes and Interface Recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Significantly improved carrier lifetime and reduced Interface Recombination velocity for CdTe/MgCdTe double heterostructures
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015Co-Authors: Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative Recombination contributes significantly to the total Recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The Interface Recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.
Xin-hao Zhao - One of the best experts on this subject based on the ideXlab platform.
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Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe HeteroInterface
IEEE Journal of Photovoltaics, 2017Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Zhao Yuan, Maxwell B. Lassise, Yong-hang ZhangAbstract:The Interface Recombination velocity (IRV) at the Interfaces in CdTe/Mg x Cd ${}_{1\hbox{-}}$ x Te double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mg x Cd ${}_{1\hbox{-}}$ x Te barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced Interface Recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the Recombination at the DH Interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μ s achieved in the DHs.
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Ultralow Interface Recombination velocity (∼1 cm/s) in CdTe/Mg x Cd 1−x Te double-heterostructures
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:CdTe/Mg x Cd 1−x Te double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low Interface Recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by Mg x Cd 1−x Te. However, both thermionic emission and tunneling effects can cause carrier loss over or through the Mg x Cd 1−x Te barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to Recombination through Interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced Interface Recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.
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carrier lifetimes and Interface Recombination velocities in cdte mgxcd1 xte double heterostructures with different mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Carrier lifetimes and Interface Recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Significantly improved carrier lifetime and reduced Interface Recombination velocity for CdTe/MgCdTe double heterostructures
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015Co-Authors: Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative Recombination contributes significantly to the total Recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The Interface Recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.
Shi Liu - One of the best experts on this subject based on the ideXlab platform.
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Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe HeteroInterface
IEEE Journal of Photovoltaics, 2017Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Zhao Yuan, Maxwell B. Lassise, Yong-hang ZhangAbstract:The Interface Recombination velocity (IRV) at the Interfaces in CdTe/Mg x Cd ${}_{1\hbox{-}}$ x Te double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mg x Cd ${}_{1\hbox{-}}$ x Te barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced Interface Recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the Recombination at the DH Interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μ s achieved in the DHs.
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Ultralow Interface Recombination velocity (∼1 cm/s) in CdTe/Mg x Cd 1−x Te double-heterostructures
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:CdTe/Mg x Cd 1−x Te double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low Interface Recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by Mg x Cd 1−x Te. However, both thermionic emission and tunneling effects can cause carrier loss over or through the Mg x Cd 1−x Te barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to Recombination through Interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced Interface Recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.
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carrier lifetimes and Interface Recombination velocities in cdte mgxcd1 xte double heterostructures with different mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Carrier lifetimes and Interface Recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Determination of CdTe bulk carrier lifetime and Interface Recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
Applied Physics Letters, 2014Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Yuan Zhao, Michael J Dinezza, Yong-hang ZhangAbstract:The bulk Shockley-Read-Hall carrier lifetime of CdTe and Interface Recombination velocity at the CdTe/Mg0.24Cd0.76Te heteroInterface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 102 cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.
Calli M. Campbell - One of the best experts on this subject based on the ideXlab platform.
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Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe HeteroInterface
IEEE Journal of Photovoltaics, 2017Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Zhao Yuan, Maxwell B. Lassise, Yong-hang ZhangAbstract:The Interface Recombination velocity (IRV) at the Interfaces in CdTe/Mg x Cd ${}_{1\hbox{-}}$ x Te double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mg x Cd ${}_{1\hbox{-}}$ x Te barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced Interface Recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the Recombination at the DH Interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μ s achieved in the DHs.
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Ultralow Interface Recombination velocity (∼1 cm/s) in CdTe/Mg x Cd 1−x Te double-heterostructures
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016Co-Authors: Xin-hao Zhao, Shi Liu, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:CdTe/Mg x Cd 1−x Te double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low Interface Recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by Mg x Cd 1−x Te. However, both thermionic emission and tunneling effects can cause carrier loss over or through the Mg x Cd 1−x Te barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to Recombination through Interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced Interface Recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.
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carrier lifetimes and Interface Recombination velocities in cdte mgxcd1 xte double heterostructures with different mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Carrier lifetimes and Interface Recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy
Applied Physics Letters, 2015Co-Authors: Shi Liu, Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The Interface Recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest Interface Recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te Interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the Recombination process in the DHs is also studied.
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Significantly improved carrier lifetime and reduced Interface Recombination velocity for CdTe/MgCdTe double heterostructures
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015Co-Authors: Xin-hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-hang ZhangAbstract:The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative Recombination contributes significantly to the total Recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The Interface Recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.
Christophe Ballif - One of the best experts on this subject based on the ideXlab platform.
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Stretched-exponential a-Si:H∕c-Si Interface Recombination decay
Applied Physics Letters, 2008Co-Authors: Stefaan De Wolf, Sara Olibet, Christophe BallifAbstract:The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors report that the electronic passivation properties of intrinsic a-Si:H/crystalline silicon (c-Si) Interfaces relax following a similar law. Carrier injection dependent a-Si:H∕c-Si Interface Recombination calculations suggest this originates from amphoteric Interface state (or Si dangling bond) reduction, rather than from a field effect. These findings underline the similarity between a-Si:H∕c-Si Interface Recombination and the electronic properties of a-Si:H bulk material.
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Stretched-exponential a-Si:Hc-Si Interface Recombination decay
Applied Physics Letters, 2008Co-Authors: Stefaan De Wolf, Sara Olibet, Christophe BallifAbstract:The electronic properties of hydrogenated amorphous silicon (a-Si:H)\nrelax following stretched exponentials. This phenomenon was explained\nin the past by dispersive hydrogen diffusion, or by retrapping included\nhydrogen motion. In this letter, the authors report that the electronic\npassivation properties of intrinsic a-Si:H/crystalline silicon (c-Si)\nInterfaces relax following a similar law. Carrier injection dependent\na-Si:H/c-Si Interface Recombination calculations suggest this originates\nfrom amphoteric Interface state (or Si dangling bond) reduction,\nrather than from a field effect. These findings underline the similarity\nbetween a-Si:H/c-Si Interface Recombination and the electronic properties\nof a-Si:H bulk material.
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HETEROJUNCTION SOLAR CELL EFFICIENCY IMPROVEMENT ON VARIOUS C-SI SUBSTRATES BY Interface Recombination MODELLING
2007Co-Authors: Sara Olibet, Christophe Ballif, Evelyne Vallat-sauvain, Lars Korte, L. FesquetAbstract:High efficiency Si heterojunction (HJ) solar cells must exhibit low Interface Recombination, as it limits the cell open circuit voltage (VOC). The study of the Interface Recombination of various a-Si:H/c-Si lifetime test samples gives insight into the Recombination mechanisms, which are found compatible with an amphoteric Recombination model [1]. We find that there is a trade-off between reduced Interface defect density, yielding high-VOC cells (713mV), and increased field effect passivation resulting in higher efficient cells (19.1%) on flat wafers. Predicted VOCs of 725mV are reached for optimally textured n- and p-type c- Si wafers passivated by intrinsic a-Si:H, but the VOCs of the cells are lower. The injection-level dependence of the surface Recombination identifies the efficiency limiting factors of HJ solar cells. Such measurements are thus a powerful indicator to achieve highly efficient devices.