The Experts below are selected from a list of 225 Experts worldwide ranked by ideXlab platform

Kam Sing Wong - One of the best experts on this subject based on the ideXlab platform.

  • ZnSe GaAs Interface State probed by time-resolved reflectance difference spectroscopy
    Applied Physics Letters, 1999
    Co-Authors: Kam Sing Wong, Hui Wang, Zhiyu Yang, George K. Wong
    Abstract:

    Time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of the 2.7 eV ZnSe/GaAs Interface State associated with Zn–As bonds. The instantaneous screening due to the photoexcited carriers and ∼18 ps recovery time of the 2.7 eV Interface State is observed in the TRDS spectra. The rapid cooling of the hot carrier in the spectral region above the ZnSe band edge is also observed.

  • Study of ZnSe/GaAs Interface State by femtosecond time-resolved reflectance difference spectroscopy
    Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series Vol.6, 1998
    Co-Authors: Kam Sing Wong, Hui Wang, Zhiyu Yang, G.l.k. Wong
    Abstract:

    Summary form only given. We believe for the first time, femtosecond time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of semiconductor Interface State. The instantaneous screening due to photoexcited carriers and the 20- to 30-ps recovery time of the 2.7-eV ZnSe-GaAs Interface State associated with Zn-As bonds is observed in the TRDS spectra.

  • Study of ZnSe/GaAs Interface State by femtosecond time-resolved reflectance difference spectroscopy
    Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series Vol.6, 1998
    Co-Authors: Kam Sing Wong, Hao Wang, Zhiyu Yang, G.l.k. Wong
    Abstract:

    We believe for the first time, femtosecond time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of semiconductor Interface State. The instantaneous screening due to photoexcited carriers and the 20- to 30-ps recovery time of the 2.7-eV ZnSe-GaAs Interface State associated with Zn-As bonds is observed in the TRDS spectra.

G.l.k. Wong - One of the best experts on this subject based on the ideXlab platform.

  • Study of ZnSe/GaAs Interface State by femtosecond time-resolved reflectance difference spectroscopy
    Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series Vol.6, 1998
    Co-Authors: Kam Sing Wong, Hui Wang, Zhiyu Yang, G.l.k. Wong
    Abstract:

    Summary form only given. We believe for the first time, femtosecond time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of semiconductor Interface State. The instantaneous screening due to photoexcited carriers and the 20- to 30-ps recovery time of the 2.7-eV ZnSe-GaAs Interface State associated with Zn-As bonds is observed in the TRDS spectra.

  • Study of ZnSe/GaAs Interface State by femtosecond time-resolved reflectance difference spectroscopy
    Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series Vol.6, 1998
    Co-Authors: Kam Sing Wong, Hao Wang, Zhiyu Yang, G.l.k. Wong
    Abstract:

    We believe for the first time, femtosecond time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of semiconductor Interface State. The instantaneous screening due to photoexcited carriers and the 20- to 30-ps recovery time of the 2.7-eV ZnSe-GaAs Interface State associated with Zn-As bonds is observed in the TRDS spectra.

Yuan Taur - One of the best experts on this subject based on the ideXlab platform.

  • Re-examination of the extraction of MOS Interface-State density by C–V stretchout and conductance methods
    Semiconductor Science and Technology, 2013
    Co-Authors: Hanping Chen, Yu Yuan, Bo Yu, Chih-sheng Chang, Clement Hsingjen Wann, Yuan Taur
    Abstract:

    The extraction of Interface-State density by the stretchout of MOS C?V (Terman method) is re-examined. It is shown that the typical 1?MHz frequency is not nearly high enough to get rid of the Interface-State contribution to the MOS capacitance. When coupled with a bias-dependent trap time constant (?), this could result in a severe underestimate of the Interface-State density. The ?conductance method?, on the other hand, can extract the Interface-State density accurately if the MOS is biased in depletion and if ? ? 1/? is within the measured frequency range. Also, the robustness of the conductance method subject to errors in the estimated oxide capacitance, as well as its extendibility into regions of weak and strong inversion is investigated. Furthermore, two cases of false peaks under the conductance method are mentioned: the first due to a small tunneling leakage in thin oxides and the second due to a high density of bulk-oxide traps.

  • Interface State modeling of hbox al _ 2 hbox o _ 3 ingaas mos from depletion to inversion
    IEEE Transactions on Electron Devices, 2012
    Co-Authors: Hanping Chen, Yu Yuan, Bo Yu, Paul C Mcintyre, P M Asbeck, M J W Rodwell, Yuan Taur
    Abstract:

    This paper presents a detailed analysis of the multifrequency capacitance–voltage and conductance–voltage data of $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{n-InGaAs}$ MOS capacitors. It is shown that the widely varied frequency dependence of the data from depletion to inversion can be fitted to various regional equivalent circuits derived from the full Interface-State model. In certain regions, incorporating bulk-oxide traps in the Interface-State model enables better fitting of data. By calibrating the model with experimental data, the Interface-State density and the trap time constants are extracted as functions of energy in the bandgap, from which the stretch-out of gate voltage is determined. It is concluded that the commonly observed decrease of the 1-kHz capacitance toward stronger inversion is due to the increasing time constant for traps to capture majority carriers at the inverted surface.

J.s. Suehle - One of the best experts on this subject based on the ideXlab platform.

  • Limitations of conductance to the measurement of the Interface State density of MOS capacitors with tunneling gate dielectrics
    IEEE Transactions on Electron Devices, 2000
    Co-Authors: E.m. Vogel, W.k. Henson, C.a. Richter, J.s. Suehle
    Abstract:

    A systematic study of the uncertainties, sensitivity and limitations of the conductance technique for extracting the Interface State density of tunneling dielectrics is presented. The methodology required to extract device parameters and Interface State density from conductance and capacitance data is reviewed and analyzed. The effect of uncertainties in device parameters on extracted Interface State density was determined using experimental results of thin oxides (1.4 nm and 2.0 nm). Modeling was used to indicate the effects of various device parameters on the sensitivity of conductance to changes in Interface State density. The effect of uncertainties in insulator capacitance of equivalently thin dielectrics on uncertainties in extracted Interface State density is minimal. The effect of uncertainties in series resistance increases with increasing bias towards accumulation. An increase in the series resistance of the device causes reduced sensitivity to changes in Interface State density especially for Interface States located nearer the majority band edge; increasing tunneling current causes increased uncertainties and reduced sensitivity to changes in Interface State density especially for Interface States nearer midgap.

D Pavlidis - One of the best experts on this subject based on the ideXlab platform.

  • low Interface State density aln gan misfets
    Electronics Letters, 1999
    Co-Authors: Egor Alekseev, A Eisenbach, D Pavlidis
    Abstract:

    III-V nitride-based MISFETs have been fabricated on AlN/GaN heterostructures grown by MOVPE. C-V characterisation of these MIS structures revealed a minimum value of the Interface State density Dit ≃ 1011 cm-2 eV-1. AlN/GaN MISFETs with 2 µm long gates demonstrated a high peak transconductance of gm ≃ 135 mS/mm, which exceeded previously reported results.

  • Low Interface State density AlN/GaN MISFETs
    Electronics Letters, 1999
    Co-Authors: Egor Alekseev, A Eisenbach, D Pavlidis
    Abstract:

    III-V nitride-based MISFETs have been fabricated on AlN/GaN heterostructures grown by MOVPE. C-V characterisation of these MIS structures revealed a minimum value of the Interface State density Dit ≃ 1011 cm-2 eV-1. AlN/GaN MISFETs with 2 µm long gates demonstrated a high peak transconductance of gm ≃ 135 mS/mm, which exceeded previously reported results.

  • Low Interface State density AlN/GaN MISFETs
    Electronics Letters, 1999
    Co-Authors: Egor Alekseev, A Eisenbach, D Pavlidis
    Abstract:

    III-V nitride-based MISFETs have been fabricated on AlN/GaN heterostructures grown by MOVPE. C-V characterisation of these MIS structures revealed a minimum value of the Interface State density D/sub it//spl sime/10/sup 11/ cm/sup -2/ eV/sup -1/. AlN/GaN MISFETs with 2 /spl mu/m long gates demonstrated a high peak transconductance of g/sub m//spl sime/135 mS/mm, which exceeded previously reported results.