The Experts below are selected from a list of 16062 Experts worldwide ranked by ideXlab platform
Denis Flandre - One of the best experts on this subject based on the ideXlab platform.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part ii effect of drain voltage
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change and Transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the Transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the Transconductance-to-current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement with measurements on long-channel UTB SOI MOSFETs as well as 2-D simulations.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part i effect of gate voltage dependent mobility
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:This paper presents a study of the effect of the gate-voltage-dependent mobility on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change method and recently proposed Transconductance-to-current ratio change method, using analytical modeling and experimental data obtained on advanced silicon-on-insulator (SOI) FinFETs and ultrathin-body SOI MOSFETs with ultrathin high- gate dielectrics. It is shown that, at vanishingly small drain voltage and constant mobility, both methods yield the same values, coinciding with the position of the maximum of the second derivative of the inversion carrier density in respect to the gate voltage. However, such is not the case anymore when considering gate-voltage dependence of mobility around threshold. Analytical expressions for the errors in the values obtained by both methods due to mobility variation around threshold are obtained. Based on analytical modeling and experimental data, it is demonstrated that, for the same mobility variation, the resulting error on the extraction caused by the gate-voltage-dependent mobility is much smaller for the Transconductance-to-current ratio change method than for the Transconductance change method.
Tamara Rudenko - One of the best experts on this subject based on the ideXlab platform.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part ii effect of drain voltage
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change and Transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the Transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the Transconductance-to-current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement with measurements on long-channel UTB SOI MOSFETs as well as 2-D simulations.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part i effect of gate voltage dependent mobility
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:This paper presents a study of the effect of the gate-voltage-dependent mobility on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change method and recently proposed Transconductance-to-current ratio change method, using analytical modeling and experimental data obtained on advanced silicon-on-insulator (SOI) FinFETs and ultrathin-body SOI MOSFETs with ultrathin high- gate dielectrics. It is shown that, at vanishingly small drain voltage and constant mobility, both methods yield the same values, coinciding with the position of the maximum of the second derivative of the inversion carrier density in respect to the gate voltage. However, such is not the case anymore when considering gate-voltage dependence of mobility around threshold. Analytical expressions for the errors in the values obtained by both methods due to mobility variation around threshold are obtained. Based on analytical modeling and experimental data, it is demonstrated that, for the same mobility variation, the resulting error on the extraction caused by the gate-voltage-dependent mobility is much smaller for the Transconductance-to-current ratio change method than for the Transconductance change method.
Jean-pierre Raskin - One of the best experts on this subject based on the ideXlab platform.
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Analog and RF analysis of gate all around silicon nanowire MOSFETs
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017Co-Authors: Linjie Liu, Jean-pierre Raskin, Qinghua Han, Sergej Makovejev, Stefan Trellenkamp, Siegfried Mantl, Qing-tai ZhaoAbstract:Gate all around (GAA) nanowire MOSFETs with gate length of 130 nm were fabricated on SOI wafers. The analog performance was analyzed in terms of Transconductance, output conductance, voltage gain, Early voltage and Transconductance efficiency. The RF characterization showed relatively low cutoff frequency and maximum oscillation frequency. Small-signal parameters are extracted using cold FET method combined with an optimization procedure called Artificial Bee Colony (ABC) method. It proves that large parasitic capacitance and high RF output conductance are the main reasons for the degraded RF performance.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part ii effect of drain voltage
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change and Transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the Transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the Transconductance-to-current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement with measurements on long-channel UTB SOI MOSFETs as well as 2-D simulations.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part i effect of gate voltage dependent mobility
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:This paper presents a study of the effect of the gate-voltage-dependent mobility on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change method and recently proposed Transconductance-to-current ratio change method, using analytical modeling and experimental data obtained on advanced silicon-on-insulator (SOI) FinFETs and ultrathin-body SOI MOSFETs with ultrathin high- gate dielectrics. It is shown that, at vanishingly small drain voltage and constant mobility, both methods yield the same values, coinciding with the position of the maximum of the second derivative of the inversion carrier density in respect to the gate voltage. However, such is not the case anymore when considering gate-voltage dependence of mobility around threshold. Analytical expressions for the errors in the values obtained by both methods due to mobility variation around threshold are obtained. Based on analytical modeling and experimental data, it is demonstrated that, for the same mobility variation, the resulting error on the extraction caused by the gate-voltage-dependent mobility is much smaller for the Transconductance-to-current ratio change method than for the Transconductance change method.
Valeriya Kilchytska - One of the best experts on this subject based on the ideXlab platform.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part ii effect of drain voltage
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change and Transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the Transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the Transconductance-to-current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement with measurements on long-channel UTB SOI MOSFETs as well as 2-D simulations.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part i effect of gate voltage dependent mobility
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:This paper presents a study of the effect of the gate-voltage-dependent mobility on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change method and recently proposed Transconductance-to-current ratio change method, using analytical modeling and experimental data obtained on advanced silicon-on-insulator (SOI) FinFETs and ultrathin-body SOI MOSFETs with ultrathin high- gate dielectrics. It is shown that, at vanishingly small drain voltage and constant mobility, both methods yield the same values, coinciding with the position of the maximum of the second derivative of the inversion carrier density in respect to the gate voltage. However, such is not the case anymore when considering gate-voltage dependence of mobility around threshold. Analytical expressions for the errors in the values obtained by both methods due to mobility variation around threshold are obtained. Based on analytical modeling and experimental data, it is demonstrated that, for the same mobility variation, the resulting error on the extraction caused by the gate-voltage-dependent mobility is much smaller for the Transconductance-to-current ratio change method than for the Transconductance change method.
A N Nazarov - One of the best experts on this subject based on the ideXlab platform.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part ii effect of drain voltage
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change and Transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the Transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the Transconductance-to-current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement with measurements on long-channel UTB SOI MOSFETs as well as 2-D simulations.
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on the mosfet threshold voltage extraction by Transconductance and Transconductance to current ratio change methods part i effect of gate voltage dependent mobility
IEEE Transactions on Electron Devices, 2011Co-Authors: Tamara Rudenko, M Md K Arshad, A N Nazarov, Valeriya Kilchytska, Jean-pierre Raskin, Denis FlandreAbstract:This paper presents a study of the effect of the gate-voltage-dependent mobility on the threshold voltage extraction in long-channel MOSFETs by the Transconductance change method and recently proposed Transconductance-to-current ratio change method, using analytical modeling and experimental data obtained on advanced silicon-on-insulator (SOI) FinFETs and ultrathin-body SOI MOSFETs with ultrathin high- gate dielectrics. It is shown that, at vanishingly small drain voltage and constant mobility, both methods yield the same values, coinciding with the position of the maximum of the second derivative of the inversion carrier density in respect to the gate voltage. However, such is not the case anymore when considering gate-voltage dependence of mobility around threshold. Analytical expressions for the errors in the values obtained by both methods due to mobility variation around threshold are obtained. Based on analytical modeling and experimental data, it is demonstrated that, for the same mobility variation, the resulting error on the extraction caused by the gate-voltage-dependent mobility is much smaller for the Transconductance-to-current ratio change method than for the Transconductance change method.
