The Experts below are selected from a list of 7155 Experts worldwide ranked by ideXlab platform
Eric J. Mittemeijer - One of the best experts on this subject based on the ideXlab platform.
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impact of Interface Thermodynamics on al induced crystallization of amorphous sixge1 x alloys
Journal of Materials Research, 2014Co-Authors: Christian A Niedermeier, Zumin Wang, Eric J. MittemeijerAbstract:Al-induced crystallization (AIC) of amorphous SixGe1–x (a-SixGe1–x) alloys with compositions over the entire range of the isomorphous Si–Ge system has been investigated. The crystallization progress was monitored by dedicated in situ x-ray diffraction analysis while gradually increasing the annealing temperature. Auger sputter-depth profiling was applied to investigate the occurrence of Al-induced layer exchange of the Al and a-SixGe1–x sublayers after complete crystallization. A-SixGe1–x alloys with x 0.41 show largely different AIC behaviors with respect to crystallization rate and possible layer exchange of the Al and a-SixGe1–x sublayers upon crystallization. A thermodynamic model for AIC of a-SixGe1–x alloys is presented, which well explains these experimental observations and thereby demonstrates the dominant role of Interface Thermodynamics in the AIC process of amorphous semiconductors. The model can be used to predict the AIC behaviors of a-SixGe1–x alloys over the entire composition range at specified annealing temperatures.
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phase formation at the sn cu Interface during room temperature aging microstructural evolution whiskering and Interface Thermodynamics
Journal of Materials Research, 2011Co-Authors: Matthias Sobiech, Eric J. Mittemeijer, Carmen Kruger, U Welzel, Jiangyang Wang, Werner HugelAbstract:The time-resolved evolution of intermetallic phase formation in the system pure Sn (polycrystalline coating with a thickness of several microns) on pure Cu (polycrystalline bulk substrate) was investigated in detail by means of focused ion beam and transmission electron microscopy and x-ray diffraction during aging at room temperature for a period of about 1 year. The availability of this coherent data base allowed interpretation of the evolution of intermetallic compound (IMC) formation in terms of Interface Thermodynamics and interdiffusion kinetics. On this basis spontaneous Sn whiskering on the surface of the Sn coating as a consequence of intermetallic phase (Cu6Sn5) formation along, specifically, Sn grain boundaries intersecting the Sn/Cu Interfaces could be discussed. Moreover, a treatment to mitigate spontaneous Sn whiskering on the basis of thermodynamic control of the IMC morphology was proposed.
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fundamentals of metal induced crystallization of amorphous semiconductors
Advanced Engineering Materials, 2009Co-Authors: Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, Eric J. MittemeijerAbstract:A general, quantitative model has been developed that provides fundamental understanding of the metal-induced crystallization (MIC) of amorphous semiconductors. Interface Thermodynamics has been shown to play a decisive role for the whether or not occurrence of MIC. The model has been employed to predict the MIC temperature for various metal/amorphous-semiconductor systems. A consequence of the model is the prediction that the thickness of an ultrathin, pure Al film put on the top of an amorphous Si layer can be used as a very accurate tool to tune the crystallization temperature of amorphous Si. These theoretical predictions have been confirmed experimentally. The fundamental understanding reached may lead to pronounced technological progress in the low-temperature manufacturing of crystalline-Si-based devices deposited on cheap and flexible substrates such as glasses, plastics, and possibly even papers.
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Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by application of Interface Thermodynamics
Physical review letters, 2008Co-Authors: Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, Eric J. MittemeijerAbstract:It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si. The effect has been explained quantitatively by application of surface-Interface Thermodynamics. The predictions have been confirmed experimentally by a real-time in situ spectroscopic ellipsometry investigation of the crystallization temperature of a-Si as a function of the thickness of ultrathin Al layers.
E. J. Mittemeijer - One of the best experts on this subject based on the ideXlab platform.
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Interface Thermodynamics of ultra-thin, amorphous oxide overgrowths on AlMg alloys
Acta Materialia, 2010Co-Authors: Emila Panda, Lars P. H. Jeurgens, E. J. MittemeijerAbstract:Abstract A thermodynamic model has been presented for the prediction of the type of initial, amorphous oxide overgrowth (i.e. am-Al2O3, am-MgO or am-MgAl2O4) on bare AlMg substrates as a function of the Mg alloying element content at the substrate/oxide Interface, the growth temperature and the oxide-film thickness (up to 5 nm). On the basis of the macroscopic atom approach, expressions have been derived for the estimation of the energies of the Interfaces between the AlMg substrate and the competing am-Al2O3, am-MgO and am-MgAl2O4 overgrowths. For all cases a strong driving force has been revealed for the interfacial (chemical) segregation of Mg. am-Al2O3 was found to be the most stable amorphous oxide phase on the AlMg substrate for T
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Interface Thermodynamics of nano sized crystalline amorphous and liquid metallic systems
Journal of Alloys and Compounds, 2009Co-Authors: F Sommer, E. J. Mittemeijer, R N SinghAbstract:Abstract Expressions for the Gibbs energies of Interfaces occurring in particular for solid and/or liquid/amorphous metals or alloys in contact with each other have been developed. To consider its energetics, an amorphous alloy has been modelled as a mixture of the undercooled liquid metal components near to the glass transition temperature making use of the enthalpy of melting, the entropy of melting and the temperature-dependent contribution of the heat capacity of the undercooled melt. Gibbs surface and Interface energies have been obtained on the basis of the “macroscopic atom” Miedema model, where the entropy contributions of alloys have been derived applying a recently developed formalism. The Gibbs energy of a crystalline Interface phase has been formulated. The molar fractions of the components of the alloy at the surfaces have been determined by minimising the surface energy. These results provide a thermodynamic basis for unusual phenomena observed in nano-sized systems. The formalism has been applied to calculate the thermodynamic stability of Interface phases in a nano-sized, multi-layered system of iron and zirconium and to explain the aluminium-induced crystallisation of amorphous silicon and the layer exchange occurring in bi-layers of crystalline aluminium and amorphous silicon.
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interdiffusion phase formation and stress development in cu pd thin film diffusion couples Interface Thermodynamics and mechanisms
Journal of Applied Physics, 2008Co-Authors: J Chakraborty, E. J. Mittemeijer, U WelzelAbstract:Cu–Pd thin-film diffusion couples (individual layer thicknesses of 50nm) have been prepared by dc-magnetron sputtering on silicon substrates coated with a thin amorphous Si3N4 layer. Stress evolution, microstructural development, and phase formation during interdiffusion have been investigated employing Auger-electron spectroscopy (in combination with sputter-depth profiling), x-ray diffraction, wafer curvature measurements and transmission electron microscopy. Upon annealing at relatively low temperatures (175–250°C) for durations up to 10h, considerable diffusional intermixing occurs. Interdiffusion is accompanied by sequential formation of new phases. First, Cu3Pd forms; subsequently, CuPd forms and grows at the expense of Cu3Pd, which has been interpreted as a consequence of Interface Thermodynamics. Annealing leads to a slight sharpening of the pre-existing {111}-fiber textures and a little increase in the average grain size. A combination of ex situ (x-ray diffraction) and in situ (wafer curvature) ...
Zumin Wang - One of the best experts on this subject based on the ideXlab platform.
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impact of Interface Thermodynamics on al induced crystallization of amorphous sixge1 x alloys
Journal of Materials Research, 2014Co-Authors: Christian A Niedermeier, Zumin Wang, Eric J. MittemeijerAbstract:Al-induced crystallization (AIC) of amorphous SixGe1–x (a-SixGe1–x) alloys with compositions over the entire range of the isomorphous Si–Ge system has been investigated. The crystallization progress was monitored by dedicated in situ x-ray diffraction analysis while gradually increasing the annealing temperature. Auger sputter-depth profiling was applied to investigate the occurrence of Al-induced layer exchange of the Al and a-SixGe1–x sublayers after complete crystallization. A-SixGe1–x alloys with x 0.41 show largely different AIC behaviors with respect to crystallization rate and possible layer exchange of the Al and a-SixGe1–x sublayers upon crystallization. A thermodynamic model for AIC of a-SixGe1–x alloys is presented, which well explains these experimental observations and thereby demonstrates the dominant role of Interface Thermodynamics in the AIC process of amorphous semiconductors. The model can be used to predict the AIC behaviors of a-SixGe1–x alloys over the entire composition range at specified annealing temperatures.
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fundamentals of metal induced crystallization of amorphous semiconductors
Advanced Engineering Materials, 2009Co-Authors: Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, Eric J. MittemeijerAbstract:A general, quantitative model has been developed that provides fundamental understanding of the metal-induced crystallization (MIC) of amorphous semiconductors. Interface Thermodynamics has been shown to play a decisive role for the whether or not occurrence of MIC. The model has been employed to predict the MIC temperature for various metal/amorphous-semiconductor systems. A consequence of the model is the prediction that the thickness of an ultrathin, pure Al film put on the top of an amorphous Si layer can be used as a very accurate tool to tune the crystallization temperature of amorphous Si. These theoretical predictions have been confirmed experimentally. The fundamental understanding reached may lead to pronounced technological progress in the low-temperature manufacturing of crystalline-Si-based devices deposited on cheap and flexible substrates such as glasses, plastics, and possibly even papers.
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Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by application of Interface Thermodynamics
Physical review letters, 2008Co-Authors: Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, Eric J. MittemeijerAbstract:It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si. The effect has been explained quantitatively by application of surface-Interface Thermodynamics. The predictions have been confirmed experimentally by a real-time in situ spectroscopic ellipsometry investigation of the crystallization temperature of a-Si as a function of the thickness of ultrathin Al layers.
Lars P. H. Jeurgens - One of the best experts on this subject based on the ideXlab platform.
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Interface Thermodynamics of ultra-thin, amorphous oxide overgrowths on AlMg alloys
Acta Materialia, 2010Co-Authors: Emila Panda, Lars P. H. Jeurgens, E. J. MittemeijerAbstract:Abstract A thermodynamic model has been presented for the prediction of the type of initial, amorphous oxide overgrowth (i.e. am-Al2O3, am-MgO or am-MgAl2O4) on bare AlMg substrates as a function of the Mg alloying element content at the substrate/oxide Interface, the growth temperature and the oxide-film thickness (up to 5 nm). On the basis of the macroscopic atom approach, expressions have been derived for the estimation of the energies of the Interfaces between the AlMg substrate and the competing am-Al2O3, am-MgO and am-MgAl2O4 overgrowths. For all cases a strong driving force has been revealed for the interfacial (chemical) segregation of Mg. am-Al2O3 was found to be the most stable amorphous oxide phase on the AlMg substrate for T
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fundamentals of metal induced crystallization of amorphous semiconductors
Advanced Engineering Materials, 2009Co-Authors: Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, Eric J. MittemeijerAbstract:A general, quantitative model has been developed that provides fundamental understanding of the metal-induced crystallization (MIC) of amorphous semiconductors. Interface Thermodynamics has been shown to play a decisive role for the whether or not occurrence of MIC. The model has been employed to predict the MIC temperature for various metal/amorphous-semiconductor systems. A consequence of the model is the prediction that the thickness of an ultrathin, pure Al film put on the top of an amorphous Si layer can be used as a very accurate tool to tune the crystallization temperature of amorphous Si. These theoretical predictions have been confirmed experimentally. The fundamental understanding reached may lead to pronounced technological progress in the low-temperature manufacturing of crystalline-Si-based devices deposited on cheap and flexible substrates such as glasses, plastics, and possibly even papers.
-
Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by application of Interface Thermodynamics
Physical review letters, 2008Co-Authors: Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, Eric J. MittemeijerAbstract:It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si. The effect has been explained quantitatively by application of surface-Interface Thermodynamics. The predictions have been confirmed experimentally by a real-time in situ spectroscopic ellipsometry investigation of the crystallization temperature of a-Si as a function of the thickness of ultrathin Al layers.
Christian A Niedermeier - One of the best experts on this subject based on the ideXlab platform.
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impact of Interface Thermodynamics on al induced crystallization of amorphous sixge1 x alloys
Journal of Materials Research, 2014Co-Authors: Christian A Niedermeier, Zumin Wang, Eric J. MittemeijerAbstract:Al-induced crystallization (AIC) of amorphous SixGe1–x (a-SixGe1–x) alloys with compositions over the entire range of the isomorphous Si–Ge system has been investigated. The crystallization progress was monitored by dedicated in situ x-ray diffraction analysis while gradually increasing the annealing temperature. Auger sputter-depth profiling was applied to investigate the occurrence of Al-induced layer exchange of the Al and a-SixGe1–x sublayers after complete crystallization. A-SixGe1–x alloys with x 0.41 show largely different AIC behaviors with respect to crystallization rate and possible layer exchange of the Al and a-SixGe1–x sublayers upon crystallization. A thermodynamic model for AIC of a-SixGe1–x alloys is presented, which well explains these experimental observations and thereby demonstrates the dominant role of Interface Thermodynamics in the AIC process of amorphous semiconductors. The model can be used to predict the AIC behaviors of a-SixGe1–x alloys over the entire composition range at specified annealing temperatures.