The Experts below are selected from a list of 2427 Experts worldwide ranked by ideXlab platform
Sang Ho Oh - One of the best experts on this subject based on the ideXlab platform.
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in situ tem observation on the Interface Type resistive switching by electrochemical redox reactions at a tin pcmo Interface
Nanoscale, 2017Co-Authors: Kyungjoon Baek, Sangsu Park, Jucheol Park, Hyunsang Hwang, Sang Ho OhAbstract:The Interface-Type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide Interface, we implemented in situ resistive switching of TiN/Pr0.7Ca0.3MnO3 (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiOxNy), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO Interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole–Frenkel conduction mechanism. A detailed analysis of in situ TEM observations demonstrates that electrochemical redox reactions at the TiN/PCMO Interface are facilitated by the electric field driven drift of oxygen as well as Ti ions with a much stronger influence of the oxygen ions. As such, the reaction kinetics are governed by the electric field acting across the TiOxNy reaction layer. This layer defines the critical field for the onset of switching, which is measured to be of the order of 106 V cm−1, a typical value at which the ionic drift velocity starts increasing exponentially with the field according to the nonlinear ionic drift model. The present results indicate that understanding the nature of the electric field driven drift of ions in a nanoscale solid electrolyte is a key to the precise control of the resistive switching of metal/insulator/metal junction devices via voltage stimulations.
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In situ TEM observation on the Interface-Type resistive switching by electrochemical redox reactions at a TiN/PCMO Interface
Nanoscale, 2017Co-Authors: Kyungjoon Baek, Sangsu Park, Jucheol Park, Hyunsang Hwang, Sang Ho OhAbstract:The Interface-Type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide Interface, we implemented in situ resistive switching of TiN/Pr0.7Ca0.3MnO3 (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiOxNy), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO Interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole–Frenkel conduction mechanism. A detailed analysis of in situ TEM observations demonstrates that electrochemical redox reactions at the TiN/PCMO Interface are facilitated by the electric field driven drift of oxygen as well as Ti ions with a much stronger influence of the oxygen ions. As such, the reaction kinetics are governed by the electric field acting across the TiOxNy reaction layer. This layer defines the critical field for the onset of switching, which is measured to be of the order of 106 V cm−1, a typical value at which the ionic drift velocity starts increasing exponentially with the field according to the nonlinear ionic drift model. The present results indicate that understanding the nature of the electric field driven drift of ions in a nanoscale solid electrolyte is a key to the precise control of the resistive switching of metal/insulator/metal junction devices via voltage stimulations.
Ho Won Jang - One of the best experts on this subject based on the ideXlab platform.
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Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
ACS Applied Materials & Interfaces, 2019Co-Authors: Jaeho Choi, Kootak Hong, Cheon Woo Moon, Ho Won JangAbstract:Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (
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lead free all inorganic cesium tin iodide perovskite for filamentary and Interface Type resistive switching toward environment friendly and temperature tolerant nonvolatile memories
ACS Applied Materials & Interfaces, 2019Co-Authors: Jaeho Choi, Kootak Hong, Cheon Woo Moon, Ho Won JangAbstract:Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have Interface-Type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migr...
Kyungjoon Baek - One of the best experts on this subject based on the ideXlab platform.
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in situ tem observation on the Interface Type resistive switching by electrochemical redox reactions at a tin pcmo Interface
Nanoscale, 2017Co-Authors: Kyungjoon Baek, Sangsu Park, Jucheol Park, Hyunsang Hwang, Sang Ho OhAbstract:The Interface-Type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide Interface, we implemented in situ resistive switching of TiN/Pr0.7Ca0.3MnO3 (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiOxNy), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO Interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole–Frenkel conduction mechanism. A detailed analysis of in situ TEM observations demonstrates that electrochemical redox reactions at the TiN/PCMO Interface are facilitated by the electric field driven drift of oxygen as well as Ti ions with a much stronger influence of the oxygen ions. As such, the reaction kinetics are governed by the electric field acting across the TiOxNy reaction layer. This layer defines the critical field for the onset of switching, which is measured to be of the order of 106 V cm−1, a typical value at which the ionic drift velocity starts increasing exponentially with the field according to the nonlinear ionic drift model. The present results indicate that understanding the nature of the electric field driven drift of ions in a nanoscale solid electrolyte is a key to the precise control of the resistive switching of metal/insulator/metal junction devices via voltage stimulations.
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In situ TEM observation on the Interface-Type resistive switching by electrochemical redox reactions at a TiN/PCMO Interface
Nanoscale, 2017Co-Authors: Kyungjoon Baek, Sangsu Park, Jucheol Park, Hyunsang Hwang, Sang Ho OhAbstract:The Interface-Type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide Interface, we implemented in situ resistive switching of TiN/Pr0.7Ca0.3MnO3 (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiOxNy), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO Interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole–Frenkel conduction mechanism. A detailed analysis of in situ TEM observations demonstrates that electrochemical redox reactions at the TiN/PCMO Interface are facilitated by the electric field driven drift of oxygen as well as Ti ions with a much stronger influence of the oxygen ions. As such, the reaction kinetics are governed by the electric field acting across the TiOxNy reaction layer. This layer defines the critical field for the onset of switching, which is measured to be of the order of 106 V cm−1, a typical value at which the ionic drift velocity starts increasing exponentially with the field according to the nonlinear ionic drift model. The present results indicate that understanding the nature of the electric field driven drift of ions in a nanoscale solid electrolyte is a key to the precise control of the resistive switching of metal/insulator/metal junction devices via voltage stimulations.
Jaeho Choi - One of the best experts on this subject based on the ideXlab platform.
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Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
ACS Applied Materials & Interfaces, 2019Co-Authors: Jaeho Choi, Kootak Hong, Cheon Woo Moon, Ho Won JangAbstract:Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (
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lead free all inorganic cesium tin iodide perovskite for filamentary and Interface Type resistive switching toward environment friendly and temperature tolerant nonvolatile memories
ACS Applied Materials & Interfaces, 2019Co-Authors: Jaeho Choi, Kootak Hong, Cheon Woo Moon, Ho Won JangAbstract:Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have Interface-Type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migr...
Kootak Hong - One of the best experts on this subject based on the ideXlab platform.
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Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
ACS Applied Materials & Interfaces, 2019Co-Authors: Jaeho Choi, Kootak Hong, Cheon Woo Moon, Ho Won JangAbstract:Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (
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lead free all inorganic cesium tin iodide perovskite for filamentary and Interface Type resistive switching toward environment friendly and temperature tolerant nonvolatile memories
ACS Applied Materials & Interfaces, 2019Co-Authors: Jaeho Choi, Kootak Hong, Cheon Woo Moon, Ho Won JangAbstract:Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have Interface-Type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migr...