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Cagil Ozansoy - One of the best experts on this subject based on the ideXlab platform.
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l c band pass impedance matching coupling circuit for high voltage plc applications
International Journal of Electrical Power & Energy Systems, 2020Co-Authors: Hasan Mahamudul, Cagil OzansoyAbstract:Abstract This paper proposes a novel L-C band pass impedance matching circuit for PLC applications coupled to a Single Wire Earth Return (SWER) network via a 1.1 nF High Voltage (HV) Coupling Capacitor (CC). The work begins with characteristic impedance prediction of various SWER conductors followed by an analysis of the theoretical LC-resonant based coupling arrangements. A key finding is that high inductance and capacitance values are required for such LC-resonant based arrangements increasing the cost of solutions. An HV CC is then analysed and its effective capacitance is demonstrated, to be impacted by its Internal Protection circuitry. An L-C band pass matching circuit is then designed, built and tested as per the derived capacitance of the chosen HV-CC. The proposed coupling circuit produces only −4 dB insertion loss over the targeted 50 kHz to 150 kHz band and includes off-the-self components for a commercially viable solution. The design is based on the capacitance of an HV-CC and uses of off-the-shelf components setting this work aside from comparative works, which only considered hypothetical designs using unviable component values.
Hasan Mahamudul - One of the best experts on this subject based on the ideXlab platform.
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l c band pass impedance matching coupling circuit for high voltage plc applications
International Journal of Electrical Power & Energy Systems, 2020Co-Authors: Hasan Mahamudul, Cagil OzansoyAbstract:Abstract This paper proposes a novel L-C band pass impedance matching circuit for PLC applications coupled to a Single Wire Earth Return (SWER) network via a 1.1 nF High Voltage (HV) Coupling Capacitor (CC). The work begins with characteristic impedance prediction of various SWER conductors followed by an analysis of the theoretical LC-resonant based coupling arrangements. A key finding is that high inductance and capacitance values are required for such LC-resonant based arrangements increasing the cost of solutions. An HV CC is then analysed and its effective capacitance is demonstrated, to be impacted by its Internal Protection circuitry. An L-C band pass matching circuit is then designed, built and tested as per the derived capacitance of the chosen HV-CC. The proposed coupling circuit produces only −4 dB insertion loss over the targeted 50 kHz to 150 kHz band and includes off-the-self components for a commercially viable solution. The design is based on the capacitance of an HV-CC and uses of off-the-shelf components setting this work aside from comparative works, which only considered hypothetical designs using unviable component values.
Phulpin Tanguy - One of the best experts on this subject based on the ideXlab platform.
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Contribution to Silicon-Carbide-MESFET ESD robustness analysis
'Institute of Electrical and Electronics Engineers (IEEE)', 2018Co-Authors: Phulpin Tanguy, Isoird Karine, Trémouilles David, Austin Patrick, Perpinya X., Leon J., Vellvehi M.Abstract:International audienceIn this work, ElectroStatic Discharge (ESD) tests are performed on SiC MESFETs in order to understand their physical behavior and failure mechanisms during such stresses. The purpose is to point out advantages and drawbacks of this technology, paying special attention to aspects related to its possible commercialization and reliability. Three MESFETs designed to be integrated as a driver in monlithic SiC systems, featuring some ESD Internal Protection are investigated. Different configurations on ohmic and Schottky contacts are analyzed. Lock-in thermography is carried out for the physical failure location. With TCAD Sentaurus simulation, it allows to determine the nature of the defects on the damaged areas. Hypothesis on the failure mechanism as SiO 2 breakdown or SiC sublimation are presented. Solutions to increase the ESD robustness such as a Zener diode integration or the use of Al2O3 dielectric for passivation are therefore proposed in this article
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Contribution à l’analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium
HAL CCSD, 2017Co-Authors: Phulpin TanguyAbstract:World is nowadays consuming electric power for so many applications that it becomes fundamental to take into consideration his management. For this reason, wide bandgap semi-conductors are used to move forward into the electronic efficiency. Indeed Silicon-Carbide (SiC) presents better physical properties than Silicon with a better tradeoff between the Internal resistance and the breakdown voltage and a bigger range of temperature.However, the devices developed with this technology needs qualification and reliability expertise for being integrated in embedded circuit. With the electronic miniaturization, devices become more sensible. For this reason, ESD and radiation experiment have to be lead in order to qualify the harsh environment ability of this technology and his maturity against stress conditions.In this work, several SiC MESFET working in harsh environment (over 200 °C) and coming from the collaboration with the Ampère laboratory and the CNM laboratory are experimentally tested. Their Internal electrical behavior during ESD and heavy ion radiation is simulated with TCAD Sentaurus.ESD tests (Test Line Pulse and Human Body Model) are run on these devices. Failures are analyzed and Lock-in thermography was validated as failure analysis device.An Internal Protection structure without over-cost and without perturbations on static performances was demonstrated. A Zener diode was added on the drain electrode and gives possibility to derivate an ESD over current. The robustness is therefore increase from 1A to 1C in the JEDEC HBM Classification. The failure analysis indicates two failures mechanism: one related to the intermetallic dielectric, the other to the sublimation of SiC with the triggering of a parasitic structure. The hole created bring difficulties for the analysis because electrical signature doesn’t correspond to Silicon failure signature. Lock-in thermography was then used for separating the defect nature. Eventually, the efficient Protection against ESD has no impact on the radiation robustness. A conclusion is not possible with the simulation results of heavy ion radiation. Globally, even if the failure mechanisms are specific to the SiC due to his properties (sublimation, high critical field), results on ESD and radiations robustness are still a problem like for Silicon devices. However some improvements against ESD problems are possible but a Protection for both radiation and ESD is difficult to create on these MESFET. The study doesn’t condemn the SiC uses for the future. However, some works have still to be done in order to fully understand and to increase the capacity of SiCAlors que les besoins en énergie électrique ne cessent d’augmenter, que les applications électroniques se multiplient et que les sources d’énergie fossiles s’épuisent, nos sociétés ont besoin de solutions de gestion de l’énergie toujours plus performantes. Dans ce contexte, le marché de l’électronique de puissance connaît aujourd’hui un renouveau avec l’arrivée des composants dit « grand gap ». Ainsi le carbure de silicium (SiC) est un semi-conducteur très étudié afin de repousser les limites atteintes aujourd’hui par les composants de puissance en silicium. Néanmoins, ces futures générations de composants de puissance requièrent d’être qualifiées vis-à-vis de la robustesse aux décharges électrostatiques (ESD) qui sont responsables de nombreuses défaillances électriques. Ces composants ont également besoin d’avoir une tenue aux radiations suffisante pour garantir leur bon fonctionnement dans des systèmes embarqués notamment spatiaux ou aériens. Les concepteurs ont donc besoin de solutions pratiques, qui pourraient être communes, pour optimiser la fiabilité et connaître les mécanismes de défaillance propres à cette technologie.Dans ces travaux, l’étude des mécanismes de défaillance de transistors MESFET SiC fournis dans le cadre de la collaboration avec le laboratoire Ampère et le CNM, capables de fonctionner à haute température (200 °C), a été menée en corrélant mesures et simulations TCAD. Des tests ESD (Test Line Pulse et Human Body Model) ont été réalisés et simulés sur ces composants. Ainsi, les défaillances observées ont pu être analysées ; l’utilisation de la thermographie infrarouge active a été évaluée en tant qu’outil d’analyse de défaillance. Il a été démontré sur un composant MESFET l’efficacité d’une structure de Protection sans coût additionnel et sans perturbation des performances statiques du composant. En effet, l’ajout d’une diode Zener sur l’électrode de drain permet au composant de dériver le courant additionnel à une agression ESD et de passer ainsi de la classe 1A de la classification JEDEC ESD HBM à la classe 1C. L’analyse de défaillance a démontré clairement une limite liée au claquage des diélectriques intermétalliques. L’étude a également permis de mettre en évidence un second mécanisme de défaillance correspondant au déclenchement d’une structure parasite. Le défaut observé est alors lié à la sublimation sous forte température du SiC qui laisse un trou dans le semi-conducteur. Cela complique la détection électrique d’une défaillance dans le composant car la défaillance ne modifie pas clairement les caractéristiques électriques. Nous avons alors démontré que la thermographie infrarouge active permet de discriminer entre ces deux types de défaillance (dégradation de l’oxyde ou du SiC). Enfin, l’étude par simulation démontre que la structure de Protection proposée contre les ESD n’augmente ni ne dégrade la tenue aux radiations aux ions lourds. Les résultats ne permettent pas de conclure sur une défaillance du composant face à ce stress.Dans l’ensemble, les résultats obtenus démontrent qu’assurer la robustesse aux ESD et aux radiations des composants en SiC reste aussi problématique que pour les composants en silicium. Des solutions de Protections sont envisageables contre les agressions ESD. Les mécanismes de défaillance sont assez similaires à ceux observés pour le silicium, mais présentent des spécificités liées aux propriétés intrinsèques du SiC (sublimation, fort champ de rupture). Pour le cas des radiations, aucune conclusion ne peut être tirée pour le moment. Dans l’ensemble l’étude ne met pas en évidence de phénomène qui pourrait compromettre la future utilisation de ces technologies. Toutefois, assurer la robustesse de ces technologies n’apparaît pas plus simple que pour les composants en silicium
Frances Nicholson - One of the best experts on this subject based on the ideXlab platform.
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refugee Protection in international law unhcr s global consultations on international Protection
2003Co-Authors: Erika Feller, Volker Turk, Frances NicholsonAbstract:List of maps List of tables List of annexes Notes on contributors and editors Foreword Preface Acknowledgments Table of cases Table of treaties and other international instruments List of abbreviations Part 1 Introduction 1.1 Refugee Protection today: an overall perspective Volker Turk and Frances Nicholson 1.2 Age and gender dimensions in international refugee law Alice Edwards 1.3 Declaration of the Ministerial Meeting of States Parties to the 1951 Convention and/or its 1967 Protocol Relating to the Status of Refugees Part 2 Non-refoulement (Article 33 of the 1951 Convention) 2.1 The scope and content of the principle of non-refoulement: Opinion Sir Eli Lauterpacht and Daniel Bethlehem 2.2 Summary Conclusions: The principle of non-refoulement 2.3 List of participants Part 3 Illegal Entry (Article 31) 3.1 Article 31 of the 1951 Convention Relating to the Status of Refugees: non-penalization, detention, and Protection Guy S. Goodwin-Gill 3.2 Summary Conclusions: Article 31 of the 1951 Convention 3.3 List of participants Part 4 Membership of a Particular Social Group (Article 1A(2)) 4.1 Protected characteristics and social perceptions: an analysis of the meaning of 'membership of a particular social group' T. Alexander Aleinikoff 4.2 Summary Conclusions: membership of a particular social group 4.3 List of participants Part 5 Gender-related Persecution (Article 1A(2)) 5.1 Gender-Related Persecution Rodger Haines QC 5.2 Summary Conclusions: gender-related persecution 5.3 List of participants Part 6 Internal Protection/Relocation/Flight Alternative 6.1 Internal Protection/relocation/flight alternative as an aspect of refugee status determination James Hathaway and Michelle Foster 6.2 Summary Conclusions: Internal Protection/relocation/flight alternative 6.3 List of participants Part 7 Exclusion (Article 1F) 7.1 Current issues in the application of the exclusion clauses Geoff Gilbert 7.2 Summary Conclusions: exclusion from refugee status 7.3 List of participants Part 8 Cessation (Article 1C) 8.1 Cessation of refugee Protection Joan Fitzpatrick and Rafael Bonoan 8.2 Summary Conclusions: cessation of refugee status 8.3 List of participants Part 9 Family unity (Final Act, 1951 UN Conference) 9.1 Family unity and refugee Protection Kate Jastram and Kathleen Newland 9.2 Summary Conclusions: family unity 9.3 List of participants Part 10 Supervisory Responsibility (Article 35) 10.1 Supervising the 1951 Convention Relating to the Status of Refugees: Article 35 and beyond Walter Kalin 10.2 Summary conclusions: supervisory responsibility 10.3 List of participants Index.
Michael Negnevitsky - One of the best experts on this subject based on the ideXlab platform.
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Internal electrical Protection of wind turbine with doubly fed induction generator
Renewable and Sustainable Energy Reviews, 2016Co-Authors: M. Mahdi Mansouri, Majid Nayeripour, Michael NegnevitskyAbstract:Internal Protection system of Doubly Fed Induction Generator (DFIG) wind turbine (WT) is one of the most challenging issues in the operation of distributed generation systems especially when penetration level and capacity of them are increasing. Due to a tendency to increase the capacity of wind turbine up to 10 MW with penetration of more than 20% of total power generation in the close future, some standardization and revision should be inspected in this area. The most important reason is that the Protection of wind turbines has been considered mainly by manufacturers without significant considerations and requirements from grid system. This paper deals with the Internal Protection of DFIG-WTs and shows overall view of Internal Protection functions of them; and three new scheme: differential Protection for inter-turn fault Protection, new startup and synchronization method and Protection coordination of over current Protection with FRT requirements have been proposed.