The Experts below are selected from a list of 1152 Experts worldwide ranked by ideXlab platform

Kurebayashi H - One of the best experts on this subject based on the ideXlab platform.

  • Electric power transfer in spin-pumping experiments
    IOP PUBLISHING LTD, 2018
    Co-Authors: Rogdakis K, Alfert N, Srivastava A, Robinson Jwa, Mg Blamire, Lf Cohen, Kurebayashi H
    Abstract:

    Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load Resistors connected in series to the sample, we quantified the charge currents and associated electric power dissipation with respect to the load resistance. Through basic circuit analysis, we can describe spin-pumping cells as a non-ideal voltage source or an equivalent current source with an Internal Resistor

  • Electric power transfer in spin-pumping experiments
    'Organisation for Economic Co-Operation and Development (OECD)', 2018
    Co-Authors: Rogdakis K, Alfert N, Lf Cohen, Srivastava Anand, Robinson Jason, Blamire Mark, Kurebayashi H
    Abstract:

    © 2018 The Japan Society of Applied Physics. Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load Resistors connected in series to the sample, we quantified the charge currents and associated electric power dissipation with respect to the load resistance. Through basic circuit analysis, we can describe spin-pumping cells as a non-ideal voltage source or an equivalent current source with an Internal Resistor

  • Electric power transfer in spin pumping experiments
    'Japan Society of Applied Physics', 2017
    Co-Authors: Rogdakis K, Alfert N, Srivastava A, Robinson J. W. A., Blamire M. G., Cohen L. F., Kurebayashi H
    Abstract:

    Spin pumping is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pumping is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM) bi-layers, where the inverse spin-Hall effect (ISHE) can convert spin currents into electrical charge accumulation. In this paper, we present that it is also possible to measure the associated electric charge current generated in FM/NM bi-layers, by using a macroscopic closed circuitry detection method. Using variable load Resistors connected in series to the sample, we quantified charge currents and associated electric power dissipation as a function of the load resistance. By using basic circuit analysis, we are able to describe spin pumping cells as a non-ideal voltage source or equivalent current source with an Internal Resistor

Rogdakis K - One of the best experts on this subject based on the ideXlab platform.

  • Electric power transfer in spin-pumping experiments
    IOP PUBLISHING LTD, 2018
    Co-Authors: Rogdakis K, Alfert N, Srivastava A, Robinson Jwa, Mg Blamire, Lf Cohen, Kurebayashi H
    Abstract:

    Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load Resistors connected in series to the sample, we quantified the charge currents and associated electric power dissipation with respect to the load resistance. Through basic circuit analysis, we can describe spin-pumping cells as a non-ideal voltage source or an equivalent current source with an Internal Resistor

  • Electric power transfer in spin-pumping experiments
    'Organisation for Economic Co-Operation and Development (OECD)', 2018
    Co-Authors: Rogdakis K, Alfert N, Lf Cohen, Srivastava Anand, Robinson Jason, Blamire Mark, Kurebayashi H
    Abstract:

    © 2018 The Japan Society of Applied Physics. Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load Resistors connected in series to the sample, we quantified the charge currents and associated electric power dissipation with respect to the load resistance. Through basic circuit analysis, we can describe spin-pumping cells as a non-ideal voltage source or an equivalent current source with an Internal Resistor

  • Electric power transfer in spin pumping experiments
    'Japan Society of Applied Physics', 2017
    Co-Authors: Rogdakis K, Alfert N, Srivastava A, Robinson J. W. A., Blamire M. G., Cohen L. F., Kurebayashi H
    Abstract:

    Spin pumping is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pumping is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM) bi-layers, where the inverse spin-Hall effect (ISHE) can convert spin currents into electrical charge accumulation. In this paper, we present that it is also possible to measure the associated electric charge current generated in FM/NM bi-layers, by using a macroscopic closed circuitry detection method. Using variable load Resistors connected in series to the sample, we quantified charge currents and associated electric power dissipation as a function of the load resistance. By using basic circuit analysis, we are able to describe spin pumping cells as a non-ideal voltage source or equivalent current source with an Internal Resistor

Hyunsang Hwang - One of the best experts on this subject based on the ideXlab platform.

  • Internal Resistor of multi functional tunnel barrier for selectivity and switching uniformity in resistive random access memory
    Nanoscale Research Letters, 2014
    Co-Authors: Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Hyunsang Hwang
    Abstract:

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an Internal Resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

Alfert N - One of the best experts on this subject based on the ideXlab platform.

  • Electric power transfer in spin-pumping experiments
    IOP PUBLISHING LTD, 2018
    Co-Authors: Rogdakis K, Alfert N, Srivastava A, Robinson Jwa, Mg Blamire, Lf Cohen, Kurebayashi H
    Abstract:

    Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load Resistors connected in series to the sample, we quantified the charge currents and associated electric power dissipation with respect to the load resistance. Through basic circuit analysis, we can describe spin-pumping cells as a non-ideal voltage source or an equivalent current source with an Internal Resistor

  • Electric power transfer in spin-pumping experiments
    'Organisation for Economic Co-Operation and Development (OECD)', 2018
    Co-Authors: Rogdakis K, Alfert N, Lf Cohen, Srivastava Anand, Robinson Jason, Blamire Mark, Kurebayashi H
    Abstract:

    © 2018 The Japan Society of Applied Physics. Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load Resistors connected in series to the sample, we quantified the charge currents and associated electric power dissipation with respect to the load resistance. Through basic circuit analysis, we can describe spin-pumping cells as a non-ideal voltage source or an equivalent current source with an Internal Resistor

  • Electric power transfer in spin pumping experiments
    'Japan Society of Applied Physics', 2017
    Co-Authors: Rogdakis K, Alfert N, Srivastava A, Robinson J. W. A., Blamire M. G., Cohen L. F., Kurebayashi H
    Abstract:

    Spin pumping is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pumping is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM) bi-layers, where the inverse spin-Hall effect (ISHE) can convert spin currents into electrical charge accumulation. In this paper, we present that it is also possible to measure the associated electric charge current generated in FM/NM bi-layers, by using a macroscopic closed circuitry detection method. Using variable load Resistors connected in series to the sample, we quantified charge currents and associated electric power dissipation as a function of the load resistance. By using basic circuit analysis, we are able to describe spin pumping cells as a non-ideal voltage source or equivalent current source with an Internal Resistor

Sangheon Lee - One of the best experts on this subject based on the ideXlab platform.

  • Internal Resistor of multi functional tunnel barrier for selectivity and switching uniformity in resistive random access memory
    Nanoscale Research Letters, 2014
    Co-Authors: Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Hyunsang Hwang
    Abstract:

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an Internal Resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.