The Experts below are selected from a list of 20565 Experts worldwide ranked by ideXlab platform
Karl Prof Dr Leo - One of the best experts on this subject based on the ideXlab platform.
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organic zener diodes Tunneling across the gap in organic semiconductor materials
arXiv: Materials Science, 2010Co-Authors: Hans Kleemann, R Gutierrez, Frank Lindner, Stanislav M Avdoshenko, Pedro D Manrique, Bjorn Lussem, Gianaurelio Cuniberti, Karl Prof Dr LeoAbstract:Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a Tunneling Mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent Tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.
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organic zener diodes Tunneling across the gap in organic semiconductor materials
Nano Letters, 2010Co-Authors: Hans Kleemann, R Gutierrez, Frank Lindner, Stanislav M Avdoshenko, Pedro D Manrique, Bjorn Lussem, Gianaurelio Cuniberti, Karl Prof Dr LeoAbstract:Organic Zener diodes with a precisely adjustable reverse breakdown from −3 to −15 V without any influence on the forward current−voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a Tunneling Mechanism across the highest occupied molecular orbital−lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent Tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.
Koichiro Umetsu - One of the best experts on this subject based on the ideXlab platform.
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Tunneling Mechanism in kerr newman black hole and dimensional reduction near the horizon
Physics Letters B, 2010Co-Authors: Koichiro UmetsuAbstract:It is shown that the derivation of the Hawking radiation from a rotating black hole on the basis of the Tunneling Mechanism is greatly simplified by using the technique of the dimensional reduction near the horizon. This technique is illustrated for the original derivation by Parikh and Wilczek, but it is readily applied to a variant of the method such as suggested by Banerjee and Majhi.
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hawking radiation from kerr newman black hole and Tunneling Mechanism
arXiv: High Energy Physics - Theory, 2009Co-Authors: Koichiro UmetsuAbstract:We present the derivation of Hawking radiation by using the Tunneling Mechanism in a rotating and charged black hole background. We show that the 4-dimensional Kerr-Newman metric, which has a spherically nonsymmetric geometry, becomes an effectively 2-dimensional spherically symmetric metric by using the technique of the dimensional reduction near the horizon. We can thus readily apply the Tunneling Mechanism to the nonspherical Kerr and Kerr-Newman metric.
G Chen - One of the best experts on this subject based on the ideXlab platform.
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charge transport model in nanodielectric composites based on quantum Tunneling Mechanism and dual level traps
Applied Physics Letters, 2016Co-Authors: G ChenAbstract:Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact Mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum Tunneling Mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport Mechanisms are different. The quantum Tunneling Mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping Mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.
Hans Kleemann - One of the best experts on this subject based on the ideXlab platform.
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organic zener diodes Tunneling across the gap in organic semiconductor materials
arXiv: Materials Science, 2010Co-Authors: Hans Kleemann, R Gutierrez, Frank Lindner, Stanislav M Avdoshenko, Pedro D Manrique, Bjorn Lussem, Gianaurelio Cuniberti, Karl Prof Dr LeoAbstract:Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a Tunneling Mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent Tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.
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organic zener diodes Tunneling across the gap in organic semiconductor materials
Nano Letters, 2010Co-Authors: Hans Kleemann, R Gutierrez, Frank Lindner, Stanislav M Avdoshenko, Pedro D Manrique, Bjorn Lussem, Gianaurelio Cuniberti, Karl Prof Dr LeoAbstract:Organic Zener diodes with a precisely adjustable reverse breakdown from −3 to −15 V without any influence on the forward current−voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a Tunneling Mechanism across the highest occupied molecular orbital−lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent Tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.
J F Muth - One of the best experts on this subject based on the ideXlab platform.
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bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
Applied Physics Letters, 2008Co-Authors: A Suresh, J F MuthAbstract:The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge Tunneling Mechanism resulting in trapped negative charge screening the applied gate voltage.
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dominance of Tunneling current and band filling in ingan algan double heterostructure blue light emitting diodes
Applied Physics Letters, 1996Co-Authors: H C Casey, J F Muth, S Krishnankutty, J M ZavadaAbstract:Measurement of the room temperature forward bias current‐voltage behavior of InGaN/AlGaN double heterostructure blue light‐emitting diodes demonstrates a significant departure from the usual Is exp(qV/ nkT) behavior where n is the ideality factor which varies between 1 and 2. The observed current‐voltage behavior at room temperature may be represented as I=2.7×10−11 exp(5.7V) which suggests a Tunneling Mechanism. Measurement of the electroluminescence for currents from 0.5 to 100 mA demonstrates that the emission peak shifts to higher energy while increasing in intensity. The shifting peak spectra is due to band filling, a process which results from the injection of holes via Tunneling into an empty acceptor impurity band and vacant valence band tails. At currents near 100 mA, a non‐shifting band‐to‐band emission approaches the intensity of the shifting peak spectra. The active layer of these diodes is codoped with both the donor Si and the acceptor Zn.
