The Experts below are selected from a list of 195 Experts worldwide ranked by ideXlab platform
Kang-yoon Lee - One of the best experts on this subject based on the ideXlab platform.
-
a cmos rf energy harvester with 47 peak efficiency using Internal Threshold voltage compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A CMOS RF Energy Harvester With 47% Peak Efficiency Using Internal Threshold Voltage Compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A Design of Ambient RF Energy Harvester with Sensitivity of −21 dBm and Power Efficiency of a 39.3% Using Internal Threshold Voltage Compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
-
a design of ambient rf energy harvester with sensitivity of 21 dbm and power efficiency of a 39 3 using Internal Threshold voltage compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
Danial Khan - One of the best experts on this subject based on the ideXlab platform.
-
a cmos rf energy harvester with 47 peak efficiency using Internal Threshold voltage compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A CMOS RF Energy Harvester With 47% Peak Efficiency Using Internal Threshold Voltage Compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A Design of Ambient RF Energy Harvester with Sensitivity of −21 dBm and Power Efficiency of a 39.3% Using Internal Threshold Voltage Compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
-
a design of ambient rf energy harvester with sensitivity of 21 dbm and power efficiency of a 39 3 using Internal Threshold voltage compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
Zaffar Hayat Nawaz Khan - One of the best experts on this subject based on the ideXlab platform.
-
a cmos rf energy harvester with 47 peak efficiency using Internal Threshold voltage compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A CMOS RF Energy Harvester With 47% Peak Efficiency Using Internal Threshold Voltage Compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A Design of Ambient RF Energy Harvester with Sensitivity of −21 dBm and Power Efficiency of a 39.3% Using Internal Threshold Voltage Compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
-
a design of ambient rf energy harvester with sensitivity of 21 dbm and power efficiency of a 39 3 using Internal Threshold voltage compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
Youngoo Yang - One of the best experts on this subject based on the ideXlab platform.
-
a cmos rf energy harvester with 47 peak efficiency using Internal Threshold voltage compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A CMOS RF Energy Harvester With 47% Peak Efficiency Using Internal Threshold Voltage Compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A Design of Ambient RF Energy Harvester with Sensitivity of −21 dBm and Power Efficiency of a 39.3% Using Internal Threshold Voltage Compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
-
a design of ambient rf energy harvester with sensitivity of 21 dbm and power efficiency of a 39 3 using Internal Threshold voltage compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
Keum Cheol Hwang - One of the best experts on this subject based on the ideXlab platform.
-
a cmos rf energy harvester with 47 peak efficiency using Internal Threshold voltage compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A CMOS RF Energy Harvester With 47% Peak Efficiency Using Internal Threshold Voltage Compensation
IEEE Microwave and Wireless Components Letters, 2019Co-Authors: Danial Khan, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang-yoon LeeAbstract:This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)–dc CMOS converter employing the Internal Threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF–dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the Threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the Threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from −9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from −2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF–dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
-
A Design of Ambient RF Energy Harvester with Sensitivity of −21 dBm and Power Efficiency of a 39.3% Using Internal Threshold Voltage Compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.
-
a design of ambient rf energy harvester with sensitivity of 21 dbm and power efficiency of a 39 3 using Internal Threshold voltage compensation
Energies, 2018Co-Authors: Danial Khan, Zaffar Hayat Nawaz Khan, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Hamed Abbasizadeh, Sang-yun Kim, Syed Ahsan Ali Shah, Kang-yoon LeeAbstract:In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an Internal Threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented. A maximum power point tracking (MPPT) algorithm is implemented in order to maintain the high efficiency by automatically selecting the number of stages. The proposed reconfigurable converter efficiently converts the RF signals to DC voltage by dynamically controlling the Threshold voltage of the forward and reversed-biased transistors in the primary rectification body. During positive half-cycle, the proposed RF–DC converter reduces the voltage drop across the forward-biased transistors, which results in increased harvested power and output DC voltage. During negative half cycle, the proposed rectifier minimizes the reverse leakage current and prevents the loss of energy stored in the prior stages. A five-stage Internal Threshold compensated power converter is designed in 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) technology with an active die area of 360 µm × 160 µm, while the Maximum Power Point Tracking (MPPT) occupies an active die area of 730 µm × 280 µm. The proposed scheme obtains maximum post-simulated power conversion efficiency (PCE) of 39.3% when input power level is −15 dBm and produces an output voltage of 3.3 V for a load of 1 MΩ and at a frequency of 900 MHz. The proposed scheme achieves a voltage sensitivity of 1V at a remarkably low input power of −21 dBm for a 1 MΩ load.