The Experts below are selected from a list of 309 Experts worldwide ranked by ideXlab platform
L. Rigutti - One of the best experts on this subject based on the ideXlab platform.
-
Assessment of the Intrinsic Nature of deep level Z1/Z2 by compensation effects in proton-irradiated 4H-SiC
Semiconductor Science and Technology, 2006Co-Authors: Antonio Castaldini, Anna Cavallini, L. RiguttiAbstract:The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an Intrinsic Nature, rather than being related to a nitrogen-complex.
-
assessment of the Intrinsic Nature of deep level z1 z2 by compensation effects in proton irradiated 4h sic
Semiconductor Science and Technology, 2006Co-Authors: Antonio Castaldini, Anna Cavallini, L. RiguttiAbstract:The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an Intrinsic Nature, rather than being related to a nitrogen-complex.
Andrei L. Kholkin - One of the best experts on this subject based on the ideXlab platform.
-
Intrinsic Nature of the magnetization enhancement in heterovalently doped bi1 xaxfeo3 a ca sr pb ba multiferroics
Journal of Physics D, 2008Co-Authors: V. A. Khomchenko, M Kopcewicz, A. M. L. Lopes, Y.g. Pogorelov, João P. Araújo, Joaquim M. Vieira, Andrei L. KholkinAbstract:The mechanism of the formation of heterovalent-substitution-induced defects as well as their influence on the magnetic properties of BiFeO3-based multiferroics has been studied. It has been shown that heterovalent A2+ substitution results in the formation of oxygen vacancies in the host lattices of both antiferromagnetic and weak ferromagnetic Bi1−xAxFeO3 (A = Ca, Sr, Pb, Ba; x = 0.2, 0.3) compounds, thus indicating the Intrinsic (i.e. not related to defects themselves) mechanism of doping-induced enhancement of magnetization. A correlation between the ionic radius of the substituting element and the value of the spontaneous magnetization of the corresponding solid solution has been found. The experimental results suggest that A-site substitution with the biggest ionic radius ions effectively suppresses the spiral spin configuration of antiferromagnetic BiFeO3.
-
Intrinsic Nature of the magnetization enhancement in heterovalently doped Bi1−xAxFeO3 (A = Ca, Sr, Pb, Ba) multiferroics
Journal of Physics D: Applied Physics, 2008Co-Authors: V. A. Khomchenko, M Kopcewicz, A. M. L. Lopes, Y.g. Pogorelov, João P. Araújo, Joaquim M. Vieira, Andrei L. KholkinAbstract:The mechanism of the formation of heterovalent-substitution-induced defects as well as their influence on the magnetic properties of BiFeO3-based multiferroics has been studied. It has been shown that heterovalent A2+ substitution results in the formation of oxygen vacancies in the host lattices of both antiferromagnetic and weak ferromagnetic Bi1−xAxFeO3 (A = Ca, Sr, Pb, Ba; x = 0.2, 0.3) compounds, thus indicating the Intrinsic (i.e. not related to defects themselves) mechanism of doping-induced enhancement of magnetization. A correlation between the ionic radius of the substituting element and the value of the spontaneous magnetization of the corresponding solid solution has been found. The experimental results suggest that A-site substitution with the biggest ionic radius ions effectively suppresses the spiral spin configuration of antiferromagnetic BiFeO3.
Antonio Castaldini - One of the best experts on this subject based on the ideXlab platform.
-
Assessment of the Intrinsic Nature of deep level Z1/Z2 by compensation effects in proton-irradiated 4H-SiC
Semiconductor Science and Technology, 2006Co-Authors: Antonio Castaldini, Anna Cavallini, L. RiguttiAbstract:The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an Intrinsic Nature, rather than being related to a nitrogen-complex.
-
assessment of the Intrinsic Nature of deep level z1 z2 by compensation effects in proton irradiated 4h sic
Semiconductor Science and Technology, 2006Co-Authors: Antonio Castaldini, Anna Cavallini, L. RiguttiAbstract:The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an Intrinsic Nature, rather than being related to a nitrogen-complex.
V. A. Khomchenko - One of the best experts on this subject based on the ideXlab platform.
-
Intrinsic Nature of the magnetization enhancement in heterovalently doped bi1 xaxfeo3 a ca sr pb ba multiferroics
Journal of Physics D, 2008Co-Authors: V. A. Khomchenko, M Kopcewicz, A. M. L. Lopes, Y.g. Pogorelov, João P. Araújo, Joaquim M. Vieira, Andrei L. KholkinAbstract:The mechanism of the formation of heterovalent-substitution-induced defects as well as their influence on the magnetic properties of BiFeO3-based multiferroics has been studied. It has been shown that heterovalent A2+ substitution results in the formation of oxygen vacancies in the host lattices of both antiferromagnetic and weak ferromagnetic Bi1−xAxFeO3 (A = Ca, Sr, Pb, Ba; x = 0.2, 0.3) compounds, thus indicating the Intrinsic (i.e. not related to defects themselves) mechanism of doping-induced enhancement of magnetization. A correlation between the ionic radius of the substituting element and the value of the spontaneous magnetization of the corresponding solid solution has been found. The experimental results suggest that A-site substitution with the biggest ionic radius ions effectively suppresses the spiral spin configuration of antiferromagnetic BiFeO3.
-
Intrinsic Nature of the magnetization enhancement in heterovalently doped Bi1−xAxFeO3 (A = Ca, Sr, Pb, Ba) multiferroics
Journal of Physics D: Applied Physics, 2008Co-Authors: V. A. Khomchenko, M Kopcewicz, A. M. L. Lopes, Y.g. Pogorelov, João P. Araújo, Joaquim M. Vieira, Andrei L. KholkinAbstract:The mechanism of the formation of heterovalent-substitution-induced defects as well as their influence on the magnetic properties of BiFeO3-based multiferroics has been studied. It has been shown that heterovalent A2+ substitution results in the formation of oxygen vacancies in the host lattices of both antiferromagnetic and weak ferromagnetic Bi1−xAxFeO3 (A = Ca, Sr, Pb, Ba; x = 0.2, 0.3) compounds, thus indicating the Intrinsic (i.e. not related to defects themselves) mechanism of doping-induced enhancement of magnetization. A correlation between the ionic radius of the substituting element and the value of the spontaneous magnetization of the corresponding solid solution has been found. The experimental results suggest that A-site substitution with the biggest ionic radius ions effectively suppresses the spiral spin configuration of antiferromagnetic BiFeO3.
Anna Cavallini - One of the best experts on this subject based on the ideXlab platform.
-
Assessment of the Intrinsic Nature of deep level Z1/Z2 by compensation effects in proton-irradiated 4H-SiC
Semiconductor Science and Technology, 2006Co-Authors: Antonio Castaldini, Anna Cavallini, L. RiguttiAbstract:The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an Intrinsic Nature, rather than being related to a nitrogen-complex.
-
assessment of the Intrinsic Nature of deep level z1 z2 by compensation effects in proton irradiated 4h sic
Semiconductor Science and Technology, 2006Co-Authors: Antonio Castaldini, Anna Cavallini, L. RiguttiAbstract:The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an Intrinsic Nature, rather than being related to a nitrogen-complex.
