The Experts below are selected from a list of 231 Experts worldwide ranked by ideXlab platform
G.j.f. Legge - One of the best experts on this subject based on the ideXlab platform.
-
Scanning ion deep level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics, 2006Co-Authors: Jamie Stuart Laird, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level Transient Spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level Transient Spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current Transient is monitored as a charge Transient. Scanning the beam in conjunction with Transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the Transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge Transient. The second paper will illustrate the technique on a MeV ion implanted Au–Si Schottky junction.
-
Scanning ion deep level Transient Spectroscopy
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1999Co-Authors: Jamie Stuart Laird, R.a. Bardos, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Abstract We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron–hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au–Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.
Carl Hemmingsson - One of the best experts on this subject based on the ideXlab platform.
-
Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level Transient Spectroscopy and minority carrier Transient Spectroscopy
Journal of Applied Physics, 2016Co-Authors: Tran Thien Duc, Galia Pozina, Nguyen Tien Son, Olof Kordina, Erik Janzén, Takeshi Ohshima, Carl HemmingssonAbstract:Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level Transient Spectroscopy and minority carrier Transient Spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (EV + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 1014 cm−2, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (EC – 0.12 eV) and T2 (EC – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10−3 cm−1 and 0.9 cm−1, respectively. Due to the low introduction rate of T1, it i...
Jamie Stuart Laird - One of the best experts on this subject based on the ideXlab platform.
-
Scanning ion deep level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics, 2006Co-Authors: Jamie Stuart Laird, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level Transient Spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level Transient Spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current Transient is monitored as a charge Transient. Scanning the beam in conjunction with Transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the Transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge Transient. The second paper will illustrate the technique on a MeV ion implanted Au–Si Schottky junction.
-
Scanning ion deep level Transient Spectroscopy
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1999Co-Authors: Jamie Stuart Laird, R.a. Bardos, Chennupati Jagadish, David N. Jamieson, G.j.f. LeggeAbstract:Abstract We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron–hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au–Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.
Vito Raineri - One of the best experts on this subject based on the ideXlab platform.
-
SCTS:: scanning capacitance Transient Spectroscopy
Materials Science in Semiconductor Processing, 2001Co-Authors: Attila Tóth, László Dózsa, József Gyulai, Filippo Giannazzo, Vito RaineriAbstract:Abstract A new working mode of scanning capacitance microscopy (SCM) is presented, extending the possibilities of the measurement from lock-in amplitude mapping to recording of capacitance Transients arising as response of abrupt bias changes. Effect of Au doping in Si on SCM and scanning capacitance Transient Spectroscopy (SCTS) was observed. The decay time of capacitance Transient, measured locally on slightly doped region shows good agreement with the conventional DLTS results.
H. Naka - One of the best experts on this subject based on the ideXlab platform.
-
Characterization of EL2 in GaAs wafers by scanning isothermal Transient Spectroscopy
Semiconductor Science and Technology, 1992Co-Authors: Hideyo Okushi, Yozo Tokumaru, H. NakaAbstract:The authors have developed a novel scanning deep level Transient Spectroscopy system based on laser-excited junction capacitance or current Transient measurements under isothermal conditions (scanning isothermal Transient Spectroscopy or SICTS). By applying the system to the measurement of deep levels in GaAs, they have successfully obtained precise information on the spatial distribution of EL2 in n-type GaAs wafers.
