The Experts below are selected from a list of 63 Experts worldwide ranked by ideXlab platform
Huiyun Liu - One of the best experts on this subject based on the ideXlab platform.
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optimizations of Defect filter layers for 1 3 μm inas gaas quantum dot lasers monolithically grown on si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
Mingchu Tang - One of the best experts on this subject based on the ideXlab platform.
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optimizations of Defect filter layers for 1 3 μm inas gaas quantum dot lasers monolithically grown on si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
Richard Beanland - One of the best experts on this subject based on the ideXlab platform.
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optimizations of Defect filter layers for 1 3 μm inas gaas quantum dot lasers monolithically grown on si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
Mengya Liao - One of the best experts on this subject based on the ideXlab platform.
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optimizations of Defect filter layers for 1 3 μm inas gaas quantum dot lasers monolithically grown on si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
Siming Chen - One of the best experts on this subject based on the ideXlab platform.
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optimizations of Defect filter layers for 1 3 μm inas gaas quantum dot lasers monolithically grown on si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Mingchu Tang, Siming Chen, Qi Jiang, Kenneth Kennedy, Pamela Jurczak, Mengya Liao, Richard Beanland, Alwyn J. Seeds, Huiyun LiuAbstract:III–V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III–V and Si generates a high density of threading dislocations (TDs) at the interface between III–V and Si. Some of these TD will propagate into the III–V active region and lead to device degradation. By Introducing Defect filter layers (DFLs), the density of TDs propagating into the III–V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
