Ion Beam

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Riccardo Dagostino - One of the best experts on this subject based on the ideXlab platform.

  • Ion Beam sputtering depositIon of fluoropolymer thin films
    Applied Physics Letters, 1993
    Co-Authors: F Quaranta, A Valentini, Pietro Favia, Ritalba Lamendola, Riccardo Dagostino
    Abstract:

    It is shown that it is possible to deposit thin films with various CFx compositIon (1.26≤x≤1.83) by IonBeam sputtering. These materials with ‘‘teflon‐like’’ compositIon have been deposited at room temperature by Ar IonBeam sputtering of a teflon target; the film chemical compositIon has been determined by electron spectroscopy for chemical analysis. The fluorine‐to‐carbon ratio of the films, as well as their crosslinking degree, is shown to depend on the energy of the Ions impinging on the target.

Isao Yamada - One of the best experts on this subject based on the ideXlab platform.

  • cluster Ion Beam process technology 20 years of r d history
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2007
    Co-Authors: Isao Yamada
    Abstract:

    Abstract More than 20 years have passed since the author first began to explore the feasibility of processing by gas cluster Ion Beams at the Ion Beam Engineering Experimental Laboratory of Kyoto University. Processes employing Ions of gaseous material clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of Ion Beam technology. Cluster–surface collisIons produce important non-linear effects which are being applied to shallow junctIon formatIon, to etching and smoothing of semiconductors, metals and dielectrics, to assisted formatIon of thin films with nano-scale accuracy and to other surface modificatIon applicatIons.

  • cluster Ion Beam process technology
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2003
    Co-Authors: Isao Yamada, Jiro Matsuo, Noriaki Toyoda
    Abstract:

    Since an initial study of gas cluster Ion Beam (GCIB) had started in Ion Beam Engineering Experimental Laboratory, Kyoto University, more than 15 years has passed. Some of the results are already been applied for an industrial use. Unique characteristics of GCIB bombardment have been found to offer potential for various industrial applicatIons that cannot be achieved by conventIonal Ion Beam processing. Impact of an accelerated cluster Ion upon a target surface imparts very high-energy densities into the impact area and produces non-linear effects that are not observed in impacts of atomic Ions. Among prospective applicatIons are included shallow Ion implantatIon, high-rate sputtering, surface cleaning and smoothing, and low-temperature thin film formatIon. Low-energy bombarding effects and sputtering effects produced by the cluster Ion impact are particularly important. Cluster Ion implantatIon has been applied to realize ultra-shallow junctIon formatIon. High-sputtering yields and lateral sputtering that cause surface smoothing cannot be achieved with monomer Ion Beams. The surface smoothing process to atomic levels becomes the first productIon use of GCIB. High-quality thin film formatIon using GCIB assisted depositIon is also the characteristic that is explained mainly due to the very low energy and very high-density Ion bombardment.

  • generatIon of the large current cluster Ion Beam
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2003
    Co-Authors: Toshio Seki, Gikan H. Takaoka, Jiro Matsuo, Isao Yamada
    Abstract:

    High Ion dose is needed to realize the nano-level smoothing and etching of hard materials with increasing the productivity of processing using cluster Ion Beam. In order to achieve large current cluster Ion Beam, the cluster generatIon, IonizatIon and Ion transportatIon were studied. The intensity of neutral cluster Beam increased with source gas pressure. The efficient IonizatIon and extractIon were realized by structural improvement of the Ionizer. As a result, when the gas pressure was 15,000 Torr and the electron emissIon current is 300 mA, the Beam current reached 500 μA. The size distributIons of large current Ar cluster Ion Beam were measured using time-of-flight method. The distributIons prove that the neutral Beams include clusters with the size up to 160,000 atoms and that the distributIons can be controlled by the source gas pressure and IonizatIon conditIon.

D J Srolovitz - One of the best experts on this subject based on the ideXlab platform.

  • texture development mechanisms in Ion Beam assisted depositIon
    Journal of Applied Physics, 1998
    Co-Authors: L Dong, D J Srolovitz
    Abstract:

    Three-dimensIonal molecular dynamics simulatIons of Ion Beam assisted depositIon (IBAD) are performed to determine the mechanisms of crystallographic texture selectIon during the IBAD of polycrystalline films. A face centered cubic bicrystal consisting of [111] and [110] oriented grains is grown while an Ion Beam bombards the growing film at normal incidence. As the film grows, the grain boundaries delimiting the [111] and [110] grains move towards each other, eventually pinching off the [111] grain such that the film texture changes from equal densities of [111] and [110] to purely [110]. ExaminatIon of single crystals grown in the presence of Ion Beams shows two important effects: Ion Beam induced atomic sputtering from the surface and Ion Beam induced damage are significantly reduced when the Ion Beam is oriented along channeling directIons of the crystals. The first observatIon suggests that grains with channeling directIons aligned parallel to the Ion Beam grow more quickly than those where they are ...

Inseop Lee - One of the best experts on this subject based on the ideXlab platform.

  • Ion Beam assisted depositIon ibad of hydroxyapatite coating layer on ti based metal substrate
    Biomaterials, 2000
    Co-Authors: Jaeman Choi, Hyounee Kim, Inseop Lee
    Abstract:

    A hydroxyapatite layer was formed on the surface of a Ti-based alloy by Ion-Beam-assisted depositIon. The depositIon methodology comprised of an electron Beam vaporizing a pure hydroxyapatite target, while an Ar Ion Beam was focused on the metal substrate to assist depositIon. All deposited layers were amorphous, regardless of the current level of the Ion Beam. The bond strength between the layer and the substrate increased steadily with increasing current, while the dissolutIon rate in a physiological saline solutIon decreased remarkably. These improvements were attributed to an increase in the Ca/P ratio of the layer. Without Ion Beam assistance, the Ca/P ratio was much lower than the stoichiometric HAp (Ca/P = 1.67). With Ion-Beam assistance, the Ca/P ratio of the layer increased presumably due to the high sputtering rate of P compared to that of Ca from the layer being coated.

Andrew M Minor - One of the best experts on this subject based on the ideXlab platform.

  • focused Ion Beam microscopy and micromachining
    Mrs Bulletin, 2007
    Co-Authors: Cynthia A Volkert, Andrew M Minor
    Abstract:

    The fairly recent availability of commercial focused Ion Beam (FIB) microscopes has led to rapid development of their applicatIons for materials science. FIB instruments have both imaging and micromachining capabilities at the nanometer–micrometer scale; thus, a broad range of fundamental studies and technological applicatIons have been enhanced or made possible with FIB technology. This introductory article covers the basic FIB instrument and the fundamentals of Ion–solid interactIons that lead to the many unique FIB capabilities as well as some of the unwanted artifacts associated with FIB instruments. The four topical articles following this introductIon give overviews of specific applicatIons of the FIB in materials science, focusing on its particular strengths as a tool for characterizatIon and transmissIon electron microscopy sample preparatIon, as well as its potential for Ion Beam fabricatIon and prototyping.