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Trevor Lafleur - One of the best experts on this subject based on the ideXlab platform.
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secondary electron emissIon due to multi species iodine Ion Bombardment of different target materials
Journal of Applied Physics, 2021Co-Authors: L Habl, Dmytro Rafalskyi, Trevor LafleurAbstract:Ion-induced secondary electron emissIon (SEE) is a fundamental surface interactIon that strongly influences many plasma discharges. Recently, interest in iodine plasmas is growing due to new material processing and space propulsIon applicatIons, but data for SEE yields due to iodine Ion Bombardment remain scarce. AdditIonally, due to the formatIon of multiple Ion species in typical iodine plasmas and surface chemical reactIons leading to iodide layer formatIon, the effective SEE yield is expected to differ from that for individual Ion species on clean surfaces. In this work, we measure the SEE yield of multi-species iodine Ion beams bombarding different target materials (Mo, W, Al, Ti, Cu, carbon-carbon, and steel) in the energy range of 0.6–1.4 keV. An Ion beam is produced by extracting and accelerating Ions from a gridded Ion source based on an inductively coupled plasma (ICP). SEE yields of downstream targets are measured using a conventIonal electrostatic probe technique, and the Ion beam compositIon is determined using time-of-flight spectrometry. The beam is composed predominately of atomic ( I +) and molecular ( I 2 +) Ions whose ratio changes depending on the ICP power. Yields depend strongly on the target material and beam compositIon and vary between 0.05 and 0.4 depending on whether potential or kinetic emissIon processes dominate.
T Ichinokawa - One of the best experts on this subject based on the ideXlab platform.
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dependencies of secondary electron yields on work functIon for metals by electron and Ion Bombardment
Applied Physics Letters, 2000Co-Authors: M Kudo, Y Sakai, T IchinokawaAbstract:Secondary electron yields depending on work functIon were measured for 30 species of metal in ultrahigh vacuum by electron and Ion Bombardment. Secondary electron yields induced by electrons at 10 keV increase with work functIon, while those by Ar+ Ions at 3 keV decrease with increasing work functIon. The opposite dependencies of secondary electron yields on work functIon between electron and Ion Bombardment are discussed on the basis of the different mechanisms of secondary electron emissIon, i.e., kinetic and potential emissIon for electron and Ion Bombardment, respectively.
C R Helms - One of the best experts on this subject based on the ideXlab platform.
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direct observatIon of the etching of damaged surface layers from natural diamond by low energy oxygen Ion Bombardment
Applied Physics Letters, 1994Co-Authors: T E Beerling, C R HelmsAbstract:The interactIon of oxygen Ions with diamond surfaces is reported. Using electron energy loss spectroscopy (EELS), we found that 200 eV oxygen Ion Bombardment removed surface damaged layers (non‐sp3 bonded), recovering diamond EELS features in the surface regIon, Higher‐energy oxygen Ion Bombardment does not produce surfaces as ideal as the 200 eV case. The oxygen surface concentratIon after the 200 eV oxygen Ion irradiatIon, examined using Auger electron spectroscopy, was determined to be ∼1×1015 cm−2.
L Habl - One of the best experts on this subject based on the ideXlab platform.
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secondary electron emissIon due to multi species iodine Ion Bombardment of different target materials
Journal of Applied Physics, 2021Co-Authors: L Habl, Dmytro Rafalskyi, Trevor LafleurAbstract:Ion-induced secondary electron emissIon (SEE) is a fundamental surface interactIon that strongly influences many plasma discharges. Recently, interest in iodine plasmas is growing due to new material processing and space propulsIon applicatIons, but data for SEE yields due to iodine Ion Bombardment remain scarce. AdditIonally, due to the formatIon of multiple Ion species in typical iodine plasmas and surface chemical reactIons leading to iodide layer formatIon, the effective SEE yield is expected to differ from that for individual Ion species on clean surfaces. In this work, we measure the SEE yield of multi-species iodine Ion beams bombarding different target materials (Mo, W, Al, Ti, Cu, carbon-carbon, and steel) in the energy range of 0.6–1.4 keV. An Ion beam is produced by extracting and accelerating Ions from a gridded Ion source based on an inductively coupled plasma (ICP). SEE yields of downstream targets are measured using a conventIonal electrostatic probe technique, and the Ion beam compositIon is determined using time-of-flight spectrometry. The beam is composed predominately of atomic ( I +) and molecular ( I 2 +) Ions whose ratio changes depending on the ICP power. Yields depend strongly on the target material and beam compositIon and vary between 0.05 and 0.4 depending on whether potential or kinetic emissIon processes dominate.
Anand Srinivasan - One of the best experts on this subject based on the ideXlab platform.
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Ion Bombardment induced formatIon of self-organized wafer-scale GaInP nanopillar assemblies
'American Vacuum Society', 2020Co-Authors: Visser Dennis, Jaramillo Fernández Juliana, Haddad Gabriel, Sotomayor Torres, Clivia M., Anand SrinivasanAbstract:The authors would like to acknowledge the support from the Linné Center for Advanced Optics and Photonics (ADOPT; Grant No. 349-2007-8664), the Swedish Research Council (VR), and the Swedish Energy Agency (Energimynigheten; Grant Nos. 45199-1 and 42028-1). The authors thank Frederik Gustavsson for the TEM and EDS measurements.Ion sputtering assisted formatIon of nanopillars is demonstrated as a wafer-scale, lithography-free fabricatIon method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formatIon of self-organized ternary nanostructures. Epitaxial (100) GaInP layers lattice matched to GaAs were sputtered by nitrogen (N) Ions with relatively low Ion beam energies (∼400 eV) to reduce Ion Bombardment induced damage. The influence of process parameters such as temperature, sputter duratIon, Ion beam energy, and Ion beam incidence angle on the pillar formatIon is investigated. The fabricated GaInP nanopillars have average diameters of ∼75-100 nm, height of ∼220 nm, and average density of ∼2-4 × 10 pillars/cm. The authors show that the Ion beam incidence angle plays an important role in pillar formatIon and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reductIon in their average diameters are obtained by varying the Ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formatIon is proposed based on transmissIon electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars
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Ion Bombardment induced formatIon of self-organized wafer-scale GaInP nanopillar assemblies
'American Vacuum Society', 2020Co-Authors: Visser Dennis, Jaramillo Fernández Juliana, Haddad Gabriel, Sotomayor Torres C. M., Anand SrinivasanAbstract:Ion sputtering assisted formatIon of nanopillars is demonstrated as a wafer-scale, lithography-free fabricatIon method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formatIon of self-organized ternary nanostructures. Epitaxial (100) Ga0.51In0.49P layers lattice matched to GaAs were sputtered by nitrogen (N2) Ions with relatively low Ion beam energies (∼400 eV) to reduce Ion Bombardment induced damage. The influence of process parameters such as temperature, sputter duratIon, Ion beam energy, and Ion beam incidence angle on the pillar formatIon is investigated. The fabricated GaInP nanopillars have average diameters of ∼75–100 nm, height of ∼220 nm, and average density of ∼2–4 × 108 pillars/cm2. The authors show that the Ion beam incidence angle plays an important role in pillar formatIon and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reductIon in their average diameters are obtained by varying the Ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formatIon is proposed based on transmissIon electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars.The authors would like to acknowledge the support from the Linné Center for Advanced Optics and Photonics (ADOPT; Grant No. 349-2007-8664), the Swedish Research Council (VR), and the Swedish Energy Agency (Energimynigheten; Grant Nos. 45199-1 and 42028-1).Peer reviewe
