Ion Displacement

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Isaac L. Chuang - One of the best experts on this subject based on the ideXlab platform.

  • Surface-electrode Ion trap with integrated light source
    Applied Physics Letters, 2011
    Co-Authors: Peter F. Herskind, Isaac L. Chuang
    Abstract:

    An atomic Ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode Ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transitIon of S88r+. Through in situ translatIon of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-Ion Displacement, in units of the mode waist at the Ion, is optimized to within 0.13±0.10 of the mode center despite an initial offset of 3.30±0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ∼10 V/m at an Ion height of 670 μm, with charging and discharging time constants of 1.6±0.3 s and 4.7±0.6 s, respectively. This work is of importance to large-scale, Ion-based quantum informatIon processing, where optics integratIon in surface-electrode designs may be a crucial enabling technology.

  • Surface-electrode Ion trap with integrated light source
    Applied Physics Letters, 2011
    Co-Authors: Tony Hyun Kim, Peter F. Herskind, Isaac L. Chuang
    Abstract:

    An atomic Ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode Ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupolequbit transitIon of [superscript 88]Sr[superscript +]. Through in situ translatIon of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-Ion Displacement, in units of the mode waist at the Ion, is optimized to within 0.13 ± 0.10 of the mode center despite an initial offset of 3.30 ± 0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ~10 V/m at an Ion height of 670 μm, with charging and discharging time constants of 1.6 ± 0.3 s and 4.7 ± 0.6 s, respectively. This work is of importance to large-scale, Ion-based quantum informatIon processing, where optics integratIon in surface-electrode designs may be a crucial enabling technology.United States. Intelligence Advanced Research Projects Activity (SQIP program)Siebel FoundatIonChorafas FoundatIonLundbeck Foundatio

Ben Zhong Tang - One of the best experts on this subject based on the ideXlab platform.

Peter F. Herskind - One of the best experts on this subject based on the ideXlab platform.

  • Surface-electrode Ion trap with integrated light source
    Applied Physics Letters, 2011
    Co-Authors: Peter F. Herskind, Isaac L. Chuang
    Abstract:

    An atomic Ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode Ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transitIon of S88r+. Through in situ translatIon of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-Ion Displacement, in units of the mode waist at the Ion, is optimized to within 0.13±0.10 of the mode center despite an initial offset of 3.30±0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ∼10 V/m at an Ion height of 670 μm, with charging and discharging time constants of 1.6±0.3 s and 4.7±0.6 s, respectively. This work is of importance to large-scale, Ion-based quantum informatIon processing, where optics integratIon in surface-electrode designs may be a crucial enabling technology.

  • Surface-electrode Ion trap with integrated light source
    Applied Physics Letters, 2011
    Co-Authors: Tony Hyun Kim, Peter F. Herskind, Isaac L. Chuang
    Abstract:

    An atomic Ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode Ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupolequbit transitIon of [superscript 88]Sr[superscript +]. Through in situ translatIon of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-Ion Displacement, in units of the mode waist at the Ion, is optimized to within 0.13 ± 0.10 of the mode center despite an initial offset of 3.30 ± 0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ~10 V/m at an Ion height of 670 μm, with charging and discharging time constants of 1.6 ± 0.3 s and 4.7 ± 0.6 s, respectively. This work is of importance to large-scale, Ion-based quantum informatIon processing, where optics integratIon in surface-electrode designs may be a crucial enabling technology.United States. Intelligence Advanced Research Projects Activity (SQIP program)Siebel FoundatIonChorafas FoundatIonLundbeck Foundatio

Masahiro Yoshimura - One of the best experts on this subject based on the ideXlab platform.

Tony Hyun Kim - One of the best experts on this subject based on the ideXlab platform.

  • Surface-electrode Ion trap with integrated light source
    Applied Physics Letters, 2011
    Co-Authors: Tony Hyun Kim, Peter F. Herskind, Isaac L. Chuang
    Abstract:

    An atomic Ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode Ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupolequbit transitIon of [superscript 88]Sr[superscript +]. Through in situ translatIon of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-Ion Displacement, in units of the mode waist at the Ion, is optimized to within 0.13 ± 0.10 of the mode center despite an initial offset of 3.30 ± 0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ~10 V/m at an Ion height of 670 μm, with charging and discharging time constants of 1.6 ± 0.3 s and 4.7 ± 0.6 s, respectively. This work is of importance to large-scale, Ion-based quantum informatIon processing, where optics integratIon in surface-electrode designs may be a crucial enabling technology.United States. Intelligence Advanced Research Projects Activity (SQIP program)Siebel FoundatIonChorafas FoundatIonLundbeck Foundatio