The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform
R E I Schropp - One of the best experts on this subject based on the ideXlab platform.
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very thin and stable thin film silicon alloy triple Junction solar Cells by hot wire chemical vapor deposition
Applied Physics Letters, 2016Co-Authors: L W Veldhuizen, R E I SchroppAbstract:We present a silicon-based triple Junction solar Cell that requires a deposition time of less than 15 min for all photoactive layers. As a low-bandgap material, we used thin layers of hydrogenated amorphous silicon germanium with lower band gap than commonly used, which is possible due to the application of hot wire chemical vapor deposition. The triple Junction Cell shows an initial energy conversion efficiency exceeding 10%, and with a relative performance stability within 6%, the Cell shows a high tolerance to light-induced degradation. With these results, we help to demonstrate that hot wire chemical vapor deposition is a viable deposition method for the fabrication of low-cost solar Cells.
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hot wire cvd for thin film triple Junction Cells and for ultrafast deposition of the sin passivation layer on polycrystalline si solar Cells
Thin Solid Films, 2008Co-Authors: R E I Schropp, R L Stolk, J K Rath, R H Franken, H D Goldbach, Z S Houweling, J A Schuttauf, V Verlaan, C H M Van Der WerfAbstract:Abstract We present recent progress on hot-wire deposited thin film solar Cells and applications of silicon nitride. The Cell efficiency reached for μc-Si:H n–i–p solar Cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for μc-Si:H n–i–p's for any method of deposition. Such Cells, used in triple Junction Cells together with hot-wire deposited proto-Si:H and plasma-deposited SiGe:H, have reached 10.5% efficiency. The single Junction μc-Si:H n–i–p Cell is entirely stable under prolonged light soaking. The triple Junction Cell, including protocrystalline i-layers, is within 3% stable, due to the limited thicknesses of the two top Cells. The application of SiN x :H at a deposition rate of 3 nm/s to polycrystalline Si wafer solar Cells has led to Cells with 15.7% efficiency. We have also achieved record high deposition rates of 7.3 nm/s for transparent and dense SiN x ;H. Hot-wire SiN x :H is likely to be the first large commercial application of the Hot Wire CVD (Cat-CVD) technology.
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triple Junction n i p solar Cells with hot wire deposited protocrystalline and microcrystalline silicon
MRS Proceedings, 2007Co-Authors: R E I Schropp, J K Rath, R H Franken, Karine H M Van Der Werf, Jan Willem Schuttauf, R L StolkAbstract:We have implemented a number of methods to improve the performance of proto-Si/proto-SiGe/μc-Si:H triple Junction n-i-p solar Cells in which the top and bottom Cell i-layers are deposited by Hot-Wire CVD. Firstly, a significant current enhancement is obtained by using textured Ag/ZnO back contacts developed in house instead of plain stainless steel. We studied the correlation between the integrated current density in the long wavelength range (650-1000 nm) with the back reflector surface roughness and clarified that the rms roughness from 2D AFM images correlates well with the long wavelength response of the Cell when weighted with a Power Spectral Density function. For single Junction 2-μm thick μc-Si:H n-i-p Cells we improved the short circuit current density from the value of 15.2 mA/cm 2 for plain stainless steel to 23.4 mA/cm 2 for stainless steel coated with a textured Ag/ZnO back reflector. Secondly, we optimized the μc-Si:H n-type doped layer on this rough back reflector, the n/i interface, and in addition used a profiling scheme for the H 2 /SiH 4 ratio during i-layer deposition. The H 2 dilution during growth was stepwise increased in order to prevent a transition to amorphous growth. The efficiency that was reached for a single Junction μc-Si:H n-i-p Cell was 8.5%, which is the highest reported value for hot-wire deposited Cells of this kind, whereas the deposition rate of 2.1 A/s is about twice as high as in record Cells of this type so far. Moreover, these Cells show to be totally stable under light-soaking tests. Combining the above techniques, a rather thin triple Junction Cell (total silicon thickness 2.5 μm) has been obtained with an efficiency of 10.9%. Preliminary light-soaking tests show that this type of triple Cells degrades by less than 4%.
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tandem and triple Junction silicon thin film solar Cells with intrinsic layers prepared by hot wire cvd
Thin Solid Films, 2006Co-Authors: R L Stolk, C H M Van Der Werf, R E I SchroppAbstract:Abstract Hot-wire CVD (HWCVD) can be applied for the deposition of various types of silicon films. At Utrecht University intrinsic layers of high optoelectronic quality have been successfully used as the absorber layers in thin film solar Cells. This paper presents results for a proto-Si/μc-Si Cell and a proto-Si/μc-Si/μc-Si triple Junction Cell with its μc–μc middle-bottom tandem Cell, all deposited in nip configuration onto plain stainless steel. The proto-Si/μc-Si tandem had a good V oc of 1.38 V and a high FF of 0.75. Its efficiency of 7.3% was, considering the absence of a back reflector, adequate. The μc–μc tandem Cell had a good V oc of 1.04 V and a very high FF of 0.77. Since both tandem Cells were current-limited by the bottom Cell, the high FF-values indicate that our μc-Si material is of very high quality. The triple Cell had a lower FF of 0.69 and its V oc of 1.77 V was lower than the sum of the middle–bottom tandem and the top Cell. Filtered light-IV measurements on the μc–μc tandem Cell indicated that the losses in FF and V oc observed for the triple Cell are, at least partly, a result of the optical absorption by the proto-Si top Cell.
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present status of micro and polycrystalline silicon solar Cells made by hot wire chemical vapor deposition
Thin Solid Films, 2004Co-Authors: R E I SchroppAbstract:Considerable effort is presently put into the development of thin film microcrystalline silicon, because it has a larger longwavelength response than amorphous silicon, while at the same time it is essentially stable.In this review, the latest achievements in this field as obtained by hot-wire chemical vapor deposition (HWCVD) technology are presented and illustrated by the performance of silicon thin film devices.Since microcrystalline silicon has an indirect band gap, the absorption coefficient is low. Nevertheless, using light trapping geometries, the required thickness can be kept below 2 mm.In spite of this small thickness long deposition times are still required and therefore the achievement of higher deposition rates is important for production. Alternatively, multiJunction Cells, including amorphous components made at a higher deposition rate, can lead to lower costs while improving the overall efficiency.By doubling the catalytic surface in HWCVD, we have recently achieved a deposition rate of 7 nmys for polycrystalline silicon.As these layers tend to be more porous, a new optimum in the gas-phase reaction chemistry was found in a regime of reduced filament temperature and higher hydrogen dilution.This has led to polycrystalline n–i–p type Cells made at more than twice the deposition rate while reproducing the Cell efficiency.If the crystallinity is relaxed, allowing an increase of the amorphous volume fraction, microcrystalline silicon (rather than polycrystalline silicon) is obtained. In this mode, the layers more readily possess the compactness that is required to prevent post-oxidation.We present the world’s first HWCVD multibandgap triple Junction Cell with an efficiency of 9.1% on plain stainless steel and show the future potential of this technology. 2003 Elsevier B.V. All rights reserved.
A Rohatgi - One of the best experts on this subject based on the ideXlab platform.
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screen printed large area bifacial n type back Junction silicon solar Cells with selective phosphorus front surface field and boron doped poly si siox passivated rear emitter
Applied Physics Letters, 2018Co-Authors: Andrew M Tam, Vijay Yelundur, Adam M. Payne, Ajay Upadhyaya, Vinodh Chandrasekaran, Arnab Das, Yingyuan Huang, Aditi Jain, A RohatgiAbstract:This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave exCellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back Junction Si solar Cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the Cell including the metallized front surface field and the tunnel oxide passivated contact. Finally, 2D device modeling of this back Junction Cell is performed by implementing a simple approach which replaces the p-Poly-Si/SiOx PC by an equivalent p-n Junction with the same J0 and gives a good match between the measured and simulated Cell parameters using the extracted J0 and recombination velocity values.This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave exCellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back Junction Si solar Cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the Cell including the metallized front surface field and the tunnel oxide passivated contact. Fina...
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screen printed large area bifacial n type back Junction silicon solar Cells with selective phosphorus front surface field and boron doped poly si siox passivated rear emitter
Applied Physics Letters, 2018Co-Authors: Andrew M Tam, Vijay Yelundur, Adam M. Payne, Ajay D. Upadhyaya, Vinodh Chandrasekaran, Arnab Das, Yingyuan Huang, Aditi Jain, A RohatgiAbstract:This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave exCellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back Junction Si solar Cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the Cell including the metallized front surface field and the tunnel oxide passivated contact. Finally, 2D device modeling of this back Junction Cell is performed by implementing a simple approach which replaces the p-Poly-Si/SiOx PC by an equivalent p-n Junction with the same J0 and gives a good match between the measured and simulated Cell parameters using the extracted J0 and recombination velocity values.
Takashi Fuyuki - One of the best experts on this subject based on the ideXlab platform.
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annual output estimation of concentrator photovoltaic systems using high efficiency ingap ingaas ge triple Junction solar Cells based on experimental solar Cell s characteristics and field test meteorological data
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Tatsuya Takamoto, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge triple-Junction solar Cells under concentration were evaluated. For these solar Cells, conversion efficiency ( η ) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency triple-Junction Cell was estimated utilizing the experimental solar Cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.
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evaluation of temperature characteristics of high efficiency ingap ingaas ge triple Junction solar Cells under concentration
Solar Energy Materials and Solar Cells, 2005Co-Authors: Kensuke Nishioka, Tatsuya Takamoto, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-Junction Cells. Also, single-Junction Cells that had the similar structure to the subCells in the triple-Junction Cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge triple-Junction solar Cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subCell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-Junction Cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.
Andrew M Tam - One of the best experts on this subject based on the ideXlab platform.
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screen printed large area bifacial n type back Junction silicon solar Cells with selective phosphorus front surface field and boron doped poly si siox passivated rear emitter
Applied Physics Letters, 2018Co-Authors: Andrew M Tam, Vijay Yelundur, Adam M. Payne, Ajay Upadhyaya, Vinodh Chandrasekaran, Arnab Das, Yingyuan Huang, Aditi Jain, A RohatgiAbstract:This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave exCellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back Junction Si solar Cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the Cell including the metallized front surface field and the tunnel oxide passivated contact. Finally, 2D device modeling of this back Junction Cell is performed by implementing a simple approach which replaces the p-Poly-Si/SiOx PC by an equivalent p-n Junction with the same J0 and gives a good match between the measured and simulated Cell parameters using the extracted J0 and recombination velocity values.This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave exCellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back Junction Si solar Cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the Cell including the metallized front surface field and the tunnel oxide passivated contact. Fina...
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screen printed large area bifacial n type back Junction silicon solar Cells with selective phosphorus front surface field and boron doped poly si siox passivated rear emitter
Applied Physics Letters, 2018Co-Authors: Andrew M Tam, Vijay Yelundur, Adam M. Payne, Ajay D. Upadhyaya, Vinodh Chandrasekaran, Arnab Das, Yingyuan Huang, Aditi Jain, A RohatgiAbstract:This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave exCellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back Junction Si solar Cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the Cell including the metallized front surface field and the tunnel oxide passivated contact. Finally, 2D device modeling of this back Junction Cell is performed by implementing a simple approach which replaces the p-Poly-Si/SiOx PC by an equivalent p-n Junction with the same J0 and gives a good match between the measured and simulated Cell parameters using the extracted J0 and recombination velocity values.
Kensuke Nishioka - One of the best experts on this subject based on the ideXlab platform.
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annual output estimation of concentrator photovoltaic systems using high efficiency ingap ingaas ge triple Junction solar Cells based on experimental solar Cell s characteristics and field test meteorological data
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Tatsuya Takamoto, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge triple-Junction solar Cells under concentration were evaluated. For these solar Cells, conversion efficiency ( η ) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency triple-Junction Cell was estimated utilizing the experimental solar Cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.
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evaluation of temperature characteristics of high efficiency ingap ingaas ge triple Junction solar Cells under concentration
Solar Energy Materials and Solar Cells, 2005Co-Authors: Kensuke Nishioka, Tatsuya Takamoto, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-Junction Cells. Also, single-Junction Cells that had the similar structure to the subCells in the triple-Junction Cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge triple-Junction solar Cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subCell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-Junction Cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.
