The Experts below are selected from a list of 51 Experts worldwide ranked by ideXlab platform
Fengtao Yang - One of the best experts on this subject based on the ideXlab platform.
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a method to balance dynamic current of paralleled sic mosfets with Kelvin Connection based on response surface model and nonlinear optimization
IEEE Transactions on Power Electronics, 2021Co-Authors: Cheng Zhao, Laili Wang, Fan Zhang, Fengtao YangAbstract:Multichip SiC power modules with Kelvin-source Connection are popular in applications with large capacity and high switching frequency. However, dynamic current imbalance among paralleled dies due to asymmetric layout limits the available capacity. Thus, this article proposes a method to mitigate the mismatched dynamic current by adjusting the Connection points of bonding wires and copper traces. The response surface models and nonlinear constrained optimization algorithms are introduced for the first time to help determine the optimized positions for the Connection points. By this method, the dynamic current imbalance can be well suppressed under various working conditions. Besides, the method is cost-efficient and well compatible with the conventional manufacturing technologies because there need no additional efforts but some modifications on bonding wires. At first, the optimization guidelines are obtained after analyzing the mechanism of dynamic current imbalance among paralleled SiC MOSFETs with Kelvin-source Connection. Based on the optimization guidelines and response surface models of parasitic inductance, the dynamic current sharing problem can be transformed into a nonlinear constrained optimization issue in mathematics. According to the solution of the mathematic problem, the optimized positions for Connection points of bonding wires and copper traces can be determined. Finally, some simulations and experiments are conducted to verify the effectiveness of the proposed method.
Akio Nishida - One of the best experts on this subject based on the ideXlab platform.
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measurement of the mosfet drain current variation under high gate voltage
Solid-state Electronics, 2009Co-Authors: Kazuo Terada, T. Chagawa, Jianyu Xiang, Katsuhiro Tsuji, Takaaki Tsunomura, Akio NishidaAbstract:Abstract The method for accurately measuring the drain current of the MOSFETs, which are integrated in an array and are biased at high gate voltage, is studied. Feedback loop in Kelvin Connection is made by software to obtain both accurate and stable measurement. The experimental data show that this Kelvin measurement is accurate and it is applicable to evaluate the accuracy of the conventional Kelvin measurement using the hardware feedback loop. New test circuit containing 16 K cells is developed. This test circuit and Kelvin measurements are successfully used for evaluating the MOSFET drain current variation.
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Measurement of the MOSFET drain current variation under high gate voltage
2008 IEEE International Conference on Microelectronic Test Structures, 2008Co-Authors: T. Chagawa, Kazuo Terada, Jianyu Xiang, Katsuhiro Tsuji, Takaaki Tsunomura, Akio NishidaAbstract:The method for accurately measuring the drain current of the MOSFETs, which are integrated in an array and are biased at high gate voltage, is studied. Feedback loop in Kelvin Connection is made by software to obtain both accurate and stable measurement. The experimental data show that this Kelvin method is accurate and it is applicable to evaluate the accuracy of the conventional Kelvin method using the hardware feedback loop.
Cheng Zhao - One of the best experts on this subject based on the ideXlab platform.
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a method to balance dynamic current of paralleled sic mosfets with Kelvin Connection based on response surface model and nonlinear optimization
IEEE Transactions on Power Electronics, 2021Co-Authors: Cheng Zhao, Laili Wang, Fan Zhang, Fengtao YangAbstract:Multichip SiC power modules with Kelvin-source Connection are popular in applications with large capacity and high switching frequency. However, dynamic current imbalance among paralleled dies due to asymmetric layout limits the available capacity. Thus, this article proposes a method to mitigate the mismatched dynamic current by adjusting the Connection points of bonding wires and copper traces. The response surface models and nonlinear constrained optimization algorithms are introduced for the first time to help determine the optimized positions for the Connection points. By this method, the dynamic current imbalance can be well suppressed under various working conditions. Besides, the method is cost-efficient and well compatible with the conventional manufacturing technologies because there need no additional efforts but some modifications on bonding wires. At first, the optimization guidelines are obtained after analyzing the mechanism of dynamic current imbalance among paralleled SiC MOSFETs with Kelvin-source Connection. Based on the optimization guidelines and response surface models of parasitic inductance, the dynamic current sharing problem can be transformed into a nonlinear constrained optimization issue in mathematics. According to the solution of the mathematic problem, the optimized positions for Connection points of bonding wires and copper traces can be determined. Finally, some simulations and experiments are conducted to verify the effectiveness of the proposed method.
Fan Zhang - One of the best experts on this subject based on the ideXlab platform.
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a method to balance dynamic current of paralleled sic mosfets with Kelvin Connection based on response surface model and nonlinear optimization
IEEE Transactions on Power Electronics, 2021Co-Authors: Cheng Zhao, Laili Wang, Fan Zhang, Fengtao YangAbstract:Multichip SiC power modules with Kelvin-source Connection are popular in applications with large capacity and high switching frequency. However, dynamic current imbalance among paralleled dies due to asymmetric layout limits the available capacity. Thus, this article proposes a method to mitigate the mismatched dynamic current by adjusting the Connection points of bonding wires and copper traces. The response surface models and nonlinear constrained optimization algorithms are introduced for the first time to help determine the optimized positions for the Connection points. By this method, the dynamic current imbalance can be well suppressed under various working conditions. Besides, the method is cost-efficient and well compatible with the conventional manufacturing technologies because there need no additional efforts but some modifications on bonding wires. At first, the optimization guidelines are obtained after analyzing the mechanism of dynamic current imbalance among paralleled SiC MOSFETs with Kelvin-source Connection. Based on the optimization guidelines and response surface models of parasitic inductance, the dynamic current sharing problem can be transformed into a nonlinear constrained optimization issue in mathematics. According to the solution of the mathematic problem, the optimized positions for Connection points of bonding wires and copper traces can be determined. Finally, some simulations and experiments are conducted to verify the effectiveness of the proposed method.
Laili Wang - One of the best experts on this subject based on the ideXlab platform.
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a method to balance dynamic current of paralleled sic mosfets with Kelvin Connection based on response surface model and nonlinear optimization
IEEE Transactions on Power Electronics, 2021Co-Authors: Cheng Zhao, Laili Wang, Fan Zhang, Fengtao YangAbstract:Multichip SiC power modules with Kelvin-source Connection are popular in applications with large capacity and high switching frequency. However, dynamic current imbalance among paralleled dies due to asymmetric layout limits the available capacity. Thus, this article proposes a method to mitigate the mismatched dynamic current by adjusting the Connection points of bonding wires and copper traces. The response surface models and nonlinear constrained optimization algorithms are introduced for the first time to help determine the optimized positions for the Connection points. By this method, the dynamic current imbalance can be well suppressed under various working conditions. Besides, the method is cost-efficient and well compatible with the conventional manufacturing technologies because there need no additional efforts but some modifications on bonding wires. At first, the optimization guidelines are obtained after analyzing the mechanism of dynamic current imbalance among paralleled SiC MOSFETs with Kelvin-source Connection. Based on the optimization guidelines and response surface models of parasitic inductance, the dynamic current sharing problem can be transformed into a nonlinear constrained optimization issue in mathematics. According to the solution of the mathematic problem, the optimized positions for Connection points of bonding wires and copper traces can be determined. Finally, some simulations and experiments are conducted to verify the effectiveness of the proposed method.
