The Experts below are selected from a list of 147429 Experts worldwide ranked by ideXlab platform
Jean-pierre Locquet - One of the best experts on this subject based on the ideXlab platform.
-
Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
-
tensile strained gesn metal oxide semiconductor field effect transistor devices on si 111 using solid phase epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
Ruben Lieten - One of the best experts on this subject based on the ideXlab platform.
-
Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
-
tensile strained gesn metal oxide semiconductor field effect transistor devices on si 111 using solid phase epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
Chiungchih Hsu - One of the best experts on this subject based on the ideXlab platform.
-
high performance and low power monolithic three dimensional sub 50 nm poly si thin film transistor tfts circuits
Scientific Reports, 2017Co-Authors: Wenhsien Huang, Chihchao Yang, Hungchun Chen, Tungying Hsieh, Weisheng Lin, Minghsuan Kao, Chiuhao Chen, Jieyi Yao, Yiling Jian, Chiungchih HsuAbstract:Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based Mosfets with ON-current (Ion)/subthreshold swing (S.S.) of 181 µA/µm/107 mV/dec and 188 µA/µm/98 mV/dec for NMosfets and PMosfets in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at VDD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable Mosfets and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.
-
High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
Scientific Reports, 2017Co-Authors: Wenhsien Huang, Chihchao Yang, Hungchun Chen, Tungying Hsieh, Weisheng Lin, Minghsuan Kao, Chiuhao Chen, Jieyi Yao, Yiling Jian, Chiungchih HsuAbstract:Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based Mosfets with ON-current (I_on)/subthreshold swing (S.S.) of 181 µA/µm/107 mV/dec and 188 µA/µm/98 mV/dec for NMosfets and PMosfets in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at V_DD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable Mosfets and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.
Wipakorn Jevasuwan - One of the best experts on this subject based on the ideXlab platform.
-
Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
-
tensile strained gesn metal oxide semiconductor field effect transistor devices on si 111 using solid phase epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
Masatoshi Tanaka - One of the best experts on this subject based on the ideXlab platform.
-
Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
-
tensile strained gesn metal oxide semiconductor field effect transistor devices on si 111 using solid phase epitaxy
Applied Physics Express, 2013Co-Authors: Ruben Lieten, Wipakorn Jevasuwan, Shu Miura, Tatsuro Maeda, Noriyuki Uchida, Hiroyuki Hattori, Masatoshi Tanaka, Jean-pierre LocquetAbstract:We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel Mosfets (pMosfets) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMosfets on Si substrates.
