The Experts below are selected from a list of 309 Experts worldwide ranked by ideXlab platform
Qiuhong Yang - One of the best experts on this subject based on the ideXlab platform.
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Luminescence behavior of Yb3+heavy-doped yttrium Lanthanum Oxide transparent ceramics
Journal of Alloys and Compounds, 2008Co-Authors: Chuanguo Dou, Qiuhong YangAbstract:Yb3+ heavy-doped yttrium Lanthanum Oxide transparent ceramics were fabricated and their spectroscopic properties were investigated. The absorption bands of (YbxY0.9-xLa0.1)(2)O-3 (x = 0.05-0.15) ceramics are broad at wavelength of 900-1000 nm. The absorption cross-sections centered at 974 nm and the emission cross-sections at 1031 nm of Yb3+ ion are 0.89-1.12 x 10(-20) cm(2) and 1.05 x 10(-20) cm(2) respectively. The up-conversion luminescence intensity of Yb3+-doped yttrium Lanthanum Oxide ceramics increased firstly, then decreased with the increase of Yb3+ ion content. (C) 2008 Elsevier B.V. All rights reserved.
Chandrakant D. Lokhande - One of the best experts on this subject based on the ideXlab platform.
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Characterizations of spray-deposited Lanthanum Oxide (La2O3) thin films
Materials Letters, 2005Co-Authors: S.s. Kale, K.r. Jadhav, Pramod S. Patil, Tanaji P. Gujar, Chandrakant D. LokhandeAbstract:Abstract A simple and inexpensive spray pyrolysis method was used for the preparation of Lanthanum Oxide thin films. The films were prepared by spraying 0.1 M Lanthanum chloride solution onto the conducting and non conducting glass substrates. The substrate temperature was varied from 523 to 723 K and structural, optical and electrical properties of the films were studied. A photoelectrochemical (PEC) cell was formed using La 2 O 3 films as a photoelectrode.
Chuanguo Dou - One of the best experts on this subject based on the ideXlab platform.
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Luminescence behavior of Yb3+heavy-doped yttrium Lanthanum Oxide transparent ceramics
Journal of Alloys and Compounds, 2008Co-Authors: Chuanguo Dou, Qiuhong YangAbstract:Yb3+ heavy-doped yttrium Lanthanum Oxide transparent ceramics were fabricated and their spectroscopic properties were investigated. The absorption bands of (YbxY0.9-xLa0.1)(2)O-3 (x = 0.05-0.15) ceramics are broad at wavelength of 900-1000 nm. The absorption cross-sections centered at 974 nm and the emission cross-sections at 1031 nm of Yb3+ ion are 0.89-1.12 x 10(-20) cm(2) and 1.05 x 10(-20) cm(2) respectively. The up-conversion luminescence intensity of Yb3+-doped yttrium Lanthanum Oxide ceramics increased firstly, then decreased with the increase of Yb3+ ion content. (C) 2008 Elsevier B.V. All rights reserved.
Basma A.a. Balboul - One of the best experts on this subject based on the ideXlab platform.
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The solid state reaction between Lanthanum Oxide and strontium carbonate
Thermochimica Acta, 2006Co-Authors: Basma A.a. BalboulAbstract:Abstract The reaction between Lanthanum Oxide and strontium carbonate was studied non-isothermally between 350 and 1150 °C at different heating rates, intermediates and the final solid product were characterized by X-ray diffractometry (XRD). The reaction proceeds through formation of Lanthanum oxycarbonate La2O(CO3)2, Lanthanum dioxycarbonate La2O2CO3, and non-stoichiometric strontium Lanthanum Oxide La2SrOx (x = 4 + δ). La4SrO7 was found to be the final product which begins to form at ∼700 °C. Li+ doping enhances the formation of the final product as well as commencement of the reactions at lower temperatures.
Eiichi Suzuki - One of the best experts on this subject based on the ideXlab platform.
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MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin Films
Journal of The Electrochemical Society, 2003Co-Authors: Hirotoshi Yamada, Takashi Shimizu, Akira Kurokawa, Kenichi Ishii, Eiichi SuzukiAbstract:Lanthanum Oxide thin films were fabricated on Si substrates by the metallorganic chemical vapor deposition (MOCVD) method at substrate temperatures ranging from 400 to 650°C. From the results of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cross-sectional scanning transmission electron microscopy (STEM), and energy-dispersive X-ray (EDX) analyses, the enhanced chemical reaction at the interface between the Si substrate and the films was revealed, which results in the generation of an interfacial layer of SiO 2 (1-2 nm thick) and Lanthanum silicate at all the experimental substrate temperatures. We found that a thin silicon oxynitride layer on the Si substrate is effective in suppressing the interfacial reaction and in increasing the dielectric constant of the Lanthanum Oxide deposited on it. The thin silicon oxynitride layer is also effective in reducing the leakage current through the film. For the stacked La-Oxide/SiON film, the dielectric constant of the Lanthanum Oxide film was 19 and the leakage current density was 3 X 10 -6 A/cm 2 at the Oxide voltage of 1 V for a film with an equivalent Oxide thickness of 2.4 nm.
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Interface Reaction of a Silicon Substrate and Lanthanum Oxide Films Deposited by Metalorganic Chemical Vapor Deposition
Japanese Journal of Applied Physics, 2002Co-Authors: Hirotoshi Yamada, Takashi Shimizu, Eiichi SuzukiAbstract:The interfacial layer and the transition layer of the Lanthanum Oxide film on a Si substrate prepared by metalorganic chemical vapor deposition have been studied by X-ray photoelectron spectroscopy, cross-sectional scanning transmission electron microscopy, and energy dispersive X-ray analysis. It was revealed that the diffusion of silicon into the Lanthanum Oxide occurs during the film deposition and post-annealing, and consequently, a Lanthanum silicate is formed. The composition of Lanthanum and silicon in the silicate is nonstoichiometric and gradually changes in the direction of the film thickness. These results show that the suppression of the silicon diffusion is essential in controling the properties of the dielectric films.
