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Iraj Sadegh Amiri - One of the best experts on this subject based on the ideXlab platform.
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structural optical and electrical evolution of al and ga co doped zno sio2 glass thin film role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
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Structural, optical and electrical evolution of Al and Ga co-doped ZnO/SiO2/glass thin film: role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
Alireza Samavati - One of the best experts on this subject based on the ideXlab platform.
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structural optical and electrical evolution of al and ga co doped zno sio2 glass thin film role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
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Structural, optical and electrical evolution of Al and Ga co-doped ZnO/SiO2/glass thin film: role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
Edoardo Bemporad - One of the best experts on this subject based on the ideXlab platform.
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Laser-induced crystallization of amorphous silicon–carbon alloys studied by Raman microspectroscopy
Applied Surface Science, 2000Co-Authors: Claudio Palma, Carmine Sapia, Mariacristina Rossi, Edoardo BemporadAbstract:Abstract CW-Laser crystallization of amorphous silicon carbon alloys has been investigated as a function of both Laser Power Density and alloy composition. Irradiation of such alloys generally yields phase segregation into crystalline silicon and crystalline graphite, depending on the Laser Power Density, while crystalline SiC phase can be obtained only when nearly stoichiometric amorphous silicon–carbon alloy are irradiated.
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Laser-induced crystallization of amorphous silicon–carbon alloys studied by Raman microspectroscopy
Applied Surface Science, 1999Co-Authors: Claudio Palma, Carmine Sapia, M.c. Rossi, Edoardo BemporadAbstract:CW-Laser crystallization of amorphous silicon carbon alloys has been investigated as a function of both Laser Power Density and alloy composition. Irradiation of such alloys generally yields phase segregation into crystalline silicon and crystalline graphite, depending on the Laser Power Density, while crystalline SiC phase can be obtained only when nearly stoichiometric amorphous silicon-carbon alloy are irradiated. (C) 1999 Published by Elsevier Science B.V. All rights reserved
Zahra Samavati - One of the best experts on this subject based on the ideXlab platform.
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structural optical and electrical evolution of al and ga co doped zno sio2 glass thin film role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
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Structural, optical and electrical evolution of Al and Ga co-doped ZnO/SiO2/glass thin film: role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
A.f. Ismail - One of the best experts on this subject based on the ideXlab platform.
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structural optical and electrical evolution of al and ga co doped zno sio2 glass thin film role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
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Structural, optical and electrical evolution of Al and Ga co-doped ZnO/SiO2/glass thin film: role of Laser Power Density
RSC Advances, 2017Co-Authors: Alireza Samavati, Zahra Samavati, A.f. Ismail, Mohd Hafiz Dzarfan Othman, Mukhlis A. Rahman, A.k. Zulhairun, Iraj Sadegh AmiriAbstract:This study investigates the characteristics of Laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods. The studies on the structural, optical and electrical properties of the pre-annealed sample and samples annealed at different Power densities are conducted using a variety of characterization techniques. The samples exhibit a hexagonal wurtzite structure. Spectroscopic and nano-imaging techniques confirm that by increasing the Laser Power Density, the crystallinity of the samples is improved and the nanoparticle size is enhanced from ∼10 nm to ∼35 nm. Spectroellipsometry is employed to calculate the refractive index, extinction coefficient, and real and imaginary components of the dielectric constant. The resistivity exhibits a minimum value at 440 mJ cm−2. Results demonstrate that the optical band gaps of the samples are between 3.29 and 3.41 eV, which are greater than that of pure bulk ZnO (band-gap of 3.21 eV). Several vibrational modes occur as a result of the dopant combination in the ZnO lattice. A discussion on the origins of modes and their intensity changes is provided. This work suggests that a Laser annealing process can be an effective tool to fabricate various thin films with enhanced crystallinity. The optical and electrical properties can also be adjusted by varying the Power Density.
