The Experts below are selected from a list of 641580 Experts worldwide ranked by ideXlab platform
David Matarritacascante - One of the best experts on this subject based on the ideXlab platform.
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beyond growth reaching tourism Led Development
Annals of Tourism Research, 2010Co-Authors: David MatarritacascanteAbstract:Abstract Many communities around the world seek tourism to improve their livelihoods. The changes brought by tourism are often reflected in economic and infrastructural growth. Nevertheless, such growth does not always reflect Development goals. Framed around interactional theory, this study intends to open the “black box” of community relations by examining the causal factors, processes, and outcomes associated with tourism-Led Development. A case study methodology was applied in two amenity-rich Costa Rican communities known to present divergent growth and Development outcomes after their incursion in tourism. The study findings suggest the critical relevance of open communication, widespread participation, tolerance, and communion among residents and different tourism-related stakeholders for the promotion of processes leading to tourism-Led Development.
Ahmed Y Alyamani - One of the best experts on this subject based on the ideXlab platform.
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droop free reliable and high power ingan gan nanowire light emitting diodes for monolithic metal optoelectronics
Nano Letters, 2016Co-Authors: Chao Zhao, Aditya Prabaswara, Giuseppe Bernardo Consiglio, Idris A Ajia, Rami T. Elafandy, Iman S Roqan, Bilal Janjua, Chao Shen, Tien Khee Ng, Ahmed Y AlyamaniAbstract:A droop-free nitride light-emitting diode (Led) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in Led Development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire Leds emitting at ∼710 nm. The reliable operation of our uncooLed nanowire-Leds (NW-Leds) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm Led. The square Led sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-Leds was further inferred from current-dependent Raman measurements (up to 700 mA), which reveale...
Chao Zhao - One of the best experts on this subject based on the ideXlab platform.
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droop free reliable and high power ingan gan nanowire light emitting diodes for monolithic metal optoelectronics
Nano Letters, 2016Co-Authors: Chao Zhao, Aditya Prabaswara, Giuseppe Bernardo Consiglio, Idris A Ajia, Rami T. Elafandy, Iman S Roqan, Bilal Janjua, Chao Shen, Tien Khee Ng, Ahmed Y AlyamaniAbstract:A droop-free nitride light-emitting diode (Led) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in Led Development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire Leds emitting at ∼710 nm. The reliable operation of our uncooLed nanowire-Leds (NW-Leds) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm Led. The square Led sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-Leds was further inferred from current-dependent Raman measurements (up to 700 mA), which reveale...
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Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
Nano Letters, 2016Co-Authors: Chao Zhao, Aditya Prabaswara, Giuseppe Bernardo Consiglio, Idris A Ajia, Rami T. Elafandy, Iman S Roqan, Bilal Janjua, Tien Khee Ng, Chao ShenAbstract:A droop-free nitride light-emitting diode (Led) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in Led Development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire Leds emitting at ∼710 nm. The reliable operation of our uncooLed nanowire-Leds (NW-Leds) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm Led. The square Led sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-Leds was further inferred from current-dependent Raman measurements (up to 700 mA), which reveale...
Chao Shen - One of the best experts on this subject based on the ideXlab platform.
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droop free reliable and high power ingan gan nanowire light emitting diodes for monolithic metal optoelectronics
Nano Letters, 2016Co-Authors: Chao Zhao, Aditya Prabaswara, Giuseppe Bernardo Consiglio, Idris A Ajia, Rami T. Elafandy, Iman S Roqan, Bilal Janjua, Chao Shen, Tien Khee Ng, Ahmed Y AlyamaniAbstract:A droop-free nitride light-emitting diode (Led) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in Led Development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire Leds emitting at ∼710 nm. The reliable operation of our uncooLed nanowire-Leds (NW-Leds) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm Led. The square Led sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-Leds was further inferred from current-dependent Raman measurements (up to 700 mA), which reveale...
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Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
Nano Letters, 2016Co-Authors: Chao Zhao, Aditya Prabaswara, Giuseppe Bernardo Consiglio, Idris A Ajia, Rami T. Elafandy, Iman S Roqan, Bilal Janjua, Tien Khee Ng, Chao ShenAbstract:A droop-free nitride light-emitting diode (Led) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in Led Development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire Leds emitting at ∼710 nm. The reliable operation of our uncooLed nanowire-Leds (NW-Leds) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm Led. The square Led sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-Leds was further inferred from current-dependent Raman measurements (up to 700 mA), which reveale...
Chris Westrup - One of the best experts on this subject based on the ideXlab platform.
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jordan and ict Led Development towards a competition state
Information Technology & People, 2003Co-Authors: Saheer Aljaghoub, Chris WestrupAbstract:This paper describes Jordan's strategy to develop a strong ICT sector that will be internationally competitive. This strategy is analysed in two ways. First, by a comparison with two countries, Ireland and Singapore, with similarities as nation states and which are widely seen as successful in promoting and sustaining strong ICT sectors. Second, through an analysis of Jordan as a competition state where the role of the state is being redefined so as to implement policies in a globalising world. It is found that Jordan exhibits many of the characteristics of a competition state in terms of the promotion of mixtures of public and private partnerships and in developing relations with international agencies and multinational enterprises to create a strong ICT sector. Using these analyses, the prospects for Jordan's initiative are assessed and issues that will be of importance for its success are pointed out.
