The Experts below are selected from a list of 117 Experts worldwide ranked by ideXlab platform

D Kanjilal - One of the best experts on this subject based on the ideXlab platform.

  • sample curvature and Dislocation density studies on ion implanted gaas by x ray diffraction
    Semiconductor Science and Technology, 2003
    Co-Authors: Geeta P Nair, K S Chandrasekaran, A M Narsale, B M Arora, D Kanjilal
    Abstract:

    We have studied semi-insulating (001) GaAs wafers implanted with 70 MeV 120Sn ions to various doses ranging from 5 × 1012 to 5 × 1014 ions cm−2 following the procedures in our earlier work, Nair et al (2001 Nucl. Instrum. Methods B 184 515–22). The sample curvature is studied at various doses and compared with the theoretically expected values. Also, a survey of some reported implantations with similar experimental data has been carried out for comparison. The bending of the sample, related to defects and Linear Dislocation density due to implantation, is modelled and compared with the estimates for the same by x-ray diffraction. The samples have been annealed using a rapid thermal annealing system and the variation in curvature and Dislocation density with annealing temperature has been studied.

J. L. Ericksen - One of the best experts on this subject based on the ideXlab platform.

  • On nonLinear elasticity theory for crystal defects
    International Journal of Plasticity, 1998
    Co-Authors: J. L. Ericksen
    Abstract:

    Abstract In recent years, modifications of nonLinear elasticity theory for crystals have been used successfully to analyze phenomena associated with twinning and phase transitions involving changes in crystal symmetry. Here, I attempt to assess how adapting the ideas to Dislocation theory could bring in some mechanisms not present in Linear Dislocation theory, and why this might help us better understand plasticity phenomena. Conversely, twinning theory could benefit from adapting ideas used in Dislocation theory.

Jeyabal Sivaloganathan - One of the best experts on this subject based on the ideXlab platform.

  • On the Structure of Linear Dislocation Field Theory
    Journal of the Mechanics and Physics of Solids, 2019
    Co-Authors: Amit Acharya, Robin Knops, Jeyabal Sivaloganathan
    Abstract:

    Abstract Uniqueness of solutions in the Linear theory of non-singular Dislocations, studied as a special case of plasticity theory, is examined. The status of the classical, singular Volterra Dislocation problem as a limit of plasticity problems is illustrated by a specific example that clarifies the use of the plasticity formulation in the study of classical Dislocation theory. Stationary, quasi-static, and dynamical problems for continuous Dislocation distributions are investigated subject not only to standard boundary and initial conditions, but also to prescribed Dislocation density. In particular, the Dislocation density field can represent a single Dislocation line. It is only in the static and quasi-static traction boundary value problems that such data are sufficient for the unique determination of stress. In other quasi-static boundary value problems and problems involving moving Dislocations, the plastic and elastic distortion tensors, total displacement, and stress are in general non-unique for specified Dislocation density. The conclusions are confirmed by the example of a single screw Dislocation.

Geeta P Nair - One of the best experts on this subject based on the ideXlab platform.

  • sample curvature and Dislocation density studies on ion implanted gaas by x ray diffraction
    Semiconductor Science and Technology, 2003
    Co-Authors: Geeta P Nair, K S Chandrasekaran, A M Narsale, B M Arora, D Kanjilal
    Abstract:

    We have studied semi-insulating (001) GaAs wafers implanted with 70 MeV 120Sn ions to various doses ranging from 5 × 1012 to 5 × 1014 ions cm−2 following the procedures in our earlier work, Nair et al (2001 Nucl. Instrum. Methods B 184 515–22). The sample curvature is studied at various doses and compared with the theoretically expected values. Also, a survey of some reported implantations with similar experimental data has been carried out for comparison. The bending of the sample, related to defects and Linear Dislocation density due to implantation, is modelled and compared with the estimates for the same by x-ray diffraction. The samples have been annealed using a rapid thermal annealing system and the variation in curvature and Dislocation density with annealing temperature has been studied.

V. M. Muchortov - One of the best experts on this subject based on the ideXlab platform.